DESCRIPTION The MGFC40V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES @ Class A operation @ Internally matched to 500 system @ High output power Pigp = 10W (TYP) @7.7~8.5 GHz @ High power gain Grip = 7 dBI{TYP) @7.7~8.5GHz @ High power added efficiency Naaa = 2O%(TYP) @ 7.7~8.5GHz, Pias Hermetically sealed metal-ceramic package @ Low distortion {ltem: -51] IM; = -45 dBc (TYP) @ P, = 29 (dBm) S.C.L. Low thermal resistance Rthich-c)S2.8C/W APPLICATION Item-01: 7.7~8.5GHz band power amplifier Item-51: Digital radio communication QUALITY GRADE e 1G ABSOLUTE MAXIMUM RATINGS (1a =25'c) Symbol Parameter Ratings Unit Vooo Gate to drain voltage 16 v Vaso Gate to source valtage 15 Vv Ib Drain current 6 A Ion Reverse gate current 20 mA lor Forward gate current 42 - mA Pr Total power dissipation *1 53.5 Ww Toh Channel temperature 175 C Tstg Storage temperature b 65~ +175 c et: Te = 28C ELECTRICAL CHARACTERISTICS (ta=2s'c) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785A 7.7~8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET 17.4403 (0.685 + 0.008) OUTLINE DRAWING nu: millimeters (inches) R125 (R0,049) 2M | 20.4 + 0.2 (0.803 + 0.008) 0640.15 WD Rt.2 vf (0.024 +.0.006) (RO.047) a (0.079MIN iN i (0.315 + 0.008) IC 8.0+0.2 | | 2MIN (0.079MIN) 24+0.3(0.945 + 0.012) 15.8(0.622) . @ 5 4.0+0.4 (0.173+0.016) GF-18 13.4(0.528) | | 0.1(0.004) (0.094 +0.008) + L GATE @ SOURCE (FLANGE) @& DRAIN RECOMMENDED BIAS CONDITIONS Vos= 10V Ip=2.4A Rg=502 Refer to Bias Procedure Limits Symbol Parameter Test conditions Unit Min Typ Max loss Saturated drain current Vos =3V, Vos =0V 4.5 6 A am Transconductance Vos *3V, ip=2.2A _ 2 ~~ Vestott) Gate to source cut-off voltage Vos =3V, Ip=40mA 2 3 4 Pigs Cutout power at 1dB gain 39.0 40.0 ~ dBm Gip Linear power gain 6 7 _ oB Ip Drain current Vos *10V, Ip 2.44, f=7.7~8.5GHz _ 3.90 ~ A Yadd Power added efficiency _ 2s _ % IMy 3rd order iM distortion ey ~42 45 ~ dBc Rth(ch-o) | Thermal resistance *2 AVi method _ _ 2.8 | c/w #1: Item-51, 2-tone test P, = 29 dBm Single Carrier Level f= 8.5GHz of = 10 MHz % 2. Channel to case are MTSU MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V778SA 7.7-~8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (ta=25) Page. Grp vs. f Po. Nada 8- Pin & Vos* 10V Vpg=10V i q | = log= 2.44 ios=2.4A j s $ ~ SP t=8.10GH2 > S 5 a a z = 3 = g 4, a? 35 Po 7 40 5 6 o i Zz - Zz a Lf f 5 bt = 30 ~ Y 2 4 5 Yo add eg 5 co JL us ft Cc ve > 25 20 a 3S a YY wy 20 7 10 og lad uw Zz = 6 - 0 7.77.87.98.08.18.28.38.48.5 10 15 20 25 30 FREQUENCY f (GHz) INPUT POWER Pin {dBm} Py, IM, vs. Pin Vog=10V ~ tog=2.4A = f=8.5GHz o P wv At=10MHz E 2 tone test ao zB a c tad s Qo ao is x & 5 18 20 22 24 26 28 INPUT POWER Py (dBm $.C.L) S PARAMETERS (Ta=28C, Vos =10V, Ipg =2.4A) L S Parameters (TYP.} f : Su S21 \ Siz Sez (GHz) Magn Angle (deg } Magn Angle (deg } Magn. Angie (deg. } Magn Angie (deg.} 17 0.50 40 2.13 154 0.072 : 105 0.42 ~ 7 7.8 0! 0.46 31 2.20 140 0.076 : 93 0.37 ~ 27 1900) 0.41 19 2.25 127 0.082 : 78 0.30 - 39 8.0 0.34 6 2.28 113 0.085 63 0.22 - 52 8.1 0.25 ~ 13 2.23 99 0.084 | 48 0.15 - 73 | 8.2 0.17 | ~ 42 2.32 83 0.087 | 33 0.10 116 8.3 0.12 ~ 104 2.32 66 0.090 16 0.11 187 8.4 0.18 5 = 162 2.25 43 0.039 0 0.15 124 8.5 0.31 168 2.20 31 0.085 13 0.20 96 5-56 ELECTRIC