IXFN170N25X3 - IXYS - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25C to 150C 250 V

VDGR TJ= 25C to 150C, RGS = 1M250 V

VGSS Continuous  20 V

VGSM Transient  30 V

ID25 TC= 25C 146 A

IDM TC= 25C, Pulse Width Limited by TJM 400 A

IATC= 25C85A

EAS TC= 25C 2.3 J

PDTC= 25C 390 W

dv/dt IS IDM, VDD  VDSS, TJ  150°C 20 V/ns

TJ-55 ... +150 C

TJM 150 C

Tstg -55 ... +150 C

VISOL 50/60 Hz, RMS t = 1 minute 2500 V~

IISOL  1mA t = 1 second 3000 V~

Md Mounting Torque 1.5/13 Nm/lb.in

Terminal Connection Torque 1.3/11.5 Nm/lb.in

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 250 V

VGS(th) VDS = VGS, ID = 4mA 2.5 4.5 V

IGSS VGS =  20V, VDS = 0V 100 nA

IDSS VDS = VDSS, VGS = 0V 10 A

TJ = 125C 1 mA

RDS(on) VGS = 10V, ID = 85A, Note 1 6.1 7.4 m

IXFN170N25X3 VDSS = 250V

ID25 = 146A

RDS(on) 



 7.4m





DS100825A(4/17)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

X3-Class HiPerFETTM

Power MOSFET

Features

International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Isolation Voltage 2500 V~

High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low RDS(on)

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

miniBLOC, SOT-227



E153432

G

D

S

G = Gate D = Drain

S = Source

S

D

G

Advance Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN170N25X3

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 170 A

ISM Repetitive, Pulse Width Limited by TJM 680 A

VSD IF = 100A, VGS = 0V, Note 1 1.4 V

trr 135 ns

QRM 980 nC

IRM 13 A

IF = 85A, -di/dt = 100A/s

VR = 100V, VGS = 0V

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max

gfs VDS = 10V, ID = 60A, Note 1 66 110 S

RGi Gate Input Resistance 1.3 

Ciss 13.5 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 2.3 nF

Crss 1.6 pF

Co(er) 800 pF

Co(tr) 3280 pF

td(on) 18 ns

tr 10 ns

td(off) 62 ns

tf 7 ns

Qg(on) 190 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 85A 55 nC

Qgd 45 nC

RthJC 0.32 C/W

RthCS 0.05 C/W

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 85A

RG = 5(External)

Effective Output Capacitance

Energy related

Time related

VGS = 0V

VDS = 0.8 • VDSS

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXFN170N25X3

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

20

40

60

80

100

120

140

160

180

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

4V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0

20

40

60

80

100

120

140

160

180

00.511.522.53

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

4V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 85A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 170A

I

D

= 85A

Fig. 5. R

DS(on)

Normalized to I

D

= 85A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 100 200 300 400 500 600 700 800

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125

o

C

T

J

= 25

o

C

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

100

200

300

400

500

600

700

800

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

8V

7V

9V

5V

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

BV

DSS

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN170N25X3

Fig. 7. Maximum Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 9. Transconductance

0

40

80

120

160

200

240

0 40 80 120 160 200 240

I

D

- Amperes

g

f s

- Siemens

25

o

C

125

o

C

T

J

= - 40

o

C

Fig. 10. Forward Voltage Drop of Intrinsic Diode

0

100

200

300

400

500

600

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V

SD

- Volts

I

S

- Amperes

T

J

= 25

o

C

T

J

= 125

o

C

Fig. 11. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160 180 200

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 125V

I

D

= 85A

I

G

= 10mA

Fig. 12. Capacitance

1

10

100

1,000

10,000

100,000

1 10 100 1,000

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 8. Input Admittance

0

50

100

150

200

250

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125

o

C

25

o

C

- 40

o

C

IXFN170N25X3

IXYS REF: F_170N25X3(28-S301) 4-24-17

Fig. 15. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- K / W

Fig. 14. Forward-Bias Safe Operating Area

0.1

1

10

100

1000

1 10 100 1,000

V

DS

- Volts

I

D

- Amperes

T

J

= 150

o

C

T

C

= 25

o

C

Sin

g

le Pulse

1ms

100μs

R

DS(

on

)

Limit

10ms

DC

25μs

Fig. 13. Output Capacitance Stored Energy

0

4

8

12

16

20

24

0 40 80 120 160 200 240

V

DS

- Volts

E

OSS

- MicroJoules

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.