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One of the parameters limiting the conver ter’s response to
a load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
HIP6005B will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: ITRAN is the transient load current step, tRISE is the
response time to the application of load, and tFALL is the
response time to the removal of load. With a +5V input
source, the worst case response time can be either at the
application or removal of load and dependent upon the
DACOUT setting. Be sure to check both of these equations
at the minimum and maximum output levels for the worst
case response time. With a +12V input, and output voltage
level equal to DACOUT, tFALL is the longest response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the v oltage
overshoot across the MOSFETs. Use small ceramic capacitors
for high frequency decoupling and bulk capacitors to supply the
current needed each time Q1turns on. Place the small ceramic
capacitors ph ysically close to the MOSFETs and between the
drain of Q1 and the anode of Schottky diode D2.
The important parameters for the bulk input capacitor are
the voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and
current ratings above the maximum input voltage and
largest RMS current required by the circuit. The capacitor
voltage rating should be at least 1.25 times greater than the
maximum input voltage and a voltage rating of 1.5 times is
a conser vative guideline. The RMS current rating
requirement for the input capacitor of a buck regulator is
approximately 1/2 the DC load current.
F or a through hole design, se v er al electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX
or equivalent) may be needed. For surface mount designs, solid
tantalum capacitors can be used, but caution m ust be
e x ercised with regard to the capacitor surge current r ating.
These capacitors must be capab le of handling the surge-
current at power-up. The TPS series av ailab le from AVX, and
the 593D series from Sprague are both surge current tested.
MOSFET Selection/Considerations
The HIP6005B requires an N-Channel power MOSFET. It
should be selected based upon rDS(ON), gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET po wer dissipation,
package selection and heatsink are the dominant design
f actors. The po w er dissipation includes two loss components;
conduction loss and s witching loss. The conduction losses are
the largest component of power dissipation for the MOSFET.
Switching losses also contribute to the ov er all MOSFET po wer
loss (see the equations below). These equations assume linear
voltage-current tr ansitions and are appro ximations . The gate-
charge losses are dissipated by the HIP6005B and do not heat
the MOSFET. Ho w e v er, large gate-charge increases the
s witching interval, tSW, which increases the upper MOSFET
s witching losses. Ensure that the MOSFET is within its
maximum junction temperature at high ambient temperature by
calculating the temperature rise according to package thermal-
resistance specifications. A separate heatsink may be
necessary depending upon MOSFET pow er, pac kage type ,
ambient temperature and air flow.
Where: D is the duty cycle = VOUT/VIN,
tSW is the switching interval, and
FS is the switching frequency
Standard-gate MOSFETs are normally recommended for
use with the HIP6005B. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFETs absolute
gate-to-source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from VCC. The boot capacitor, CBOOT,
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of VCC
less the boot diode drop (VD) when the Schottky diode, D2,
conducts. Logic-level MOSFETs can only be used if the
MOSFETs absolute gate-to-source voltage rating exceeds
the maximum voltage applied to VCC.
Figure 10 shows the upper gate drive supplied b y a direct
connection to VCC. This option should only be used in
conv erter systems where the main input voltage is +5VDC or
less. The peak upper gate-to-source v oltage is approximately
VCC less the input supply. For +5V main power and +12VDC for
the bias, the gate-to-source v oltage of Q1 is 7V. A logic-level
MOSFET is a good choice f or Q1 under these conditions.
tRISE LxI
TRAN
VIN VOUT
–
--------------------------------= tFALL LxI
TRAN
VOUT
----------------------------=
PCOND =I
O
2xr
DS(ON) xD
P
SW = 1/2 IOxV
IN xt
SW xF
S
HIP6005B