
Voltage: 20 to 100 Volts
Current: 1.0 Amp
RoHS Device
Page 1
REV:B
CDBFN120-HF Thru CDBFN1100-HF
Dimensions in inches and (millimeter)
QW-JB001
SOD-323
SMD Schottky Barrier Rectifiers
Comchip Technology CO., LTD.
Parameter Symbol Unit
Repetitive peak reverse voltage
Maximum RMS voltage
Continuous reverse voltage
Maximum forward voltage @IF=1.0A
Forward rectified current
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Typ. thermal resistance, junction to ambient air
Typ. diode junction capacitance (Note 1)
Operating junction temperature
Storage temperature
CDBFN
120-HF
VRRM
VRMS
VR
VF
IO
IFSM
IR
RθJA
CJ
TJ
TSTG
20
14
20
30
21
30
40
28
40
1.0
30
0.5
10
90
120
50
35
50
60
42
60
0.55 0.70
-55 to +125 -55 to +150
V
V
V
V
A
A
mA
Note 1: f=1MHz and applied 4V DC reverse voltage.
-65 to +175
Features
-Batch process design, excellent powe
Mechanical data
-Weight:0.008 gram(approx.).
dissipation offers better reverse leakage current.
-Low profile surface mounted application
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Very iny plastic SMD package.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
-Case: JEDEC SOD-323, Molded plastic
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
Reverse current on VR=VRRM @TA=25°C
@TA=125°C
CDBFN CDBFN CDBFN CDBFN
160-HF150-HF140-HF
130-HF
pF
°C
°C
°C/W
Maximum Ratings (at TA=25°C unless otherwise noted)
80
56
80
100
70
100
CDBFN CDBFN
1100-HF
180-HF
0.85
0.012(0.3) Typ.
0.016(0.4) Typ.0.016(0.4) Typ.
0.106 (2.70)
0.091 (2.30)
0.057 (1.45)
0.041 (1.05)
0.047 (1.2)
0.031 (0.8)
Halogen free