13PD300-TO
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 35PD300-TO, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO-
46 header. This device is one of Telcom Devices' most versatile optoelectronic components, with
applications in high sensitivity instrumentation, laser back-facet monitoring, and moderate-bit-rate
telecomm and datacomm transmission.. Planar semiconductor design and dielectric passivation provide
superior noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C, 15
hours, Vr = 20V). Headers are available with either a lensed or flat window cap. Chips can also be attached
and wire bonded to customer-supplied or other specified packages.
All Purpose InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Responsivity
Rise/Fall
Volts
nA
pF
A/W
ns
–15
10
3
4
0.9
1
0.75
–5V
–5V
1300nm
1500nm
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
20 Volts
25 mA
5 mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS