OPERATING CHARACTERISTICS AT 250C
(Bigger Display may have more than one LED chip per segment)
SYMBOL SUPER
RED
SR
IRED
IGREEN
GBLUE
B/UB WHITE
W
SUPER
AMBER
SA
SUPER
YELLOW
SY
Operating / Storage Temperature Range
Lead Soldering Temperature
UNITS
Series Resistor to be used per segment : 300 Ohms @ 5V Supply (OR) 50 to 100 Ohms @ 3V Supply
SUPER
GREEN
SG
ULTRA
RED
UR
SUPER
ORANGE
SO
BLUE
GREEN
BG
ULTRA
GREEN
UG
VR
IF
IFS
V
mA
mA
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
5
100
150
Forward Current (mA)
20
Forward Voltage(V)
10
1.61.2
0
3.02.42.0 2.8
1
FORWARD CURRENT VS
FORWARD VOLTAGE
50
30
40
5
3 & 42
5
2.0
Luminous Intensity
Relative Volue at if=10mA
Forward Current(mA)
1.0
0
3001020 4050
3 & 4
LUMINOUS INTENSITY VS
FORWARD CURRENT
5.0
3.0
4.0
1
2
ELECTRICAL CHARACTERISTIC CURVES
DATA SHEET 46
Face Length MM
Face Width MM
Height MM
Pin Spacing MM
Row SPacing MM
No.of pins Pins
Viewing Angle 2f/2 Deg.
KLSL3228
P A RT NO. KLSL
3228
I
KLSL
3228
SR
KLSL
3228
G
KLSL
3228
SG
KLSL
3228
SY
KLSL
3228
SA
KLSL
3228
UR
KLSL
3228
SO
KLSL
3228
B/UB
KLSL
3228
BG
KLSL
3228
UG
KLSL
3228
W
Note : All Dimensions are in mm Tolerance ± 0.2 mm
KPC/KLSL3228 Rev. 00 1-1-04
< 200o C for 5 Seconds
-10o C to + 85o C
KWALITY PHOTONICS PRIVATE LIMITED
29, EC Kushaiguda, Hyderabad-500 062, INDIA. Ph : 91-040-27123555, 27136252 Fax : 91-040-27124762
Email : kwality@kwalityindia.com www.kwalityindia.com
ISO 9001-2000
1. AlGaAs : I, SR 2. GaP : G 3 & 4. AllnGap : SG, SY, SA, UR, SO 5. GaInN : B, BG, UG, W
Forward Voltage - Typical @ 10mA
Forward Voltage - Maximum @ 70 mA
Reverse Current @ VR = 5V
Peak Emission Wavelength
Emission Wavelength Half Width
Luminous Intensity per Segment @ 70mA
Lumens Flux @70mA
ABSOUL TE MAXIMUM RATINGS A T 250C
Reverse Voltage
Forward Current (avg) *(NOTE 1)
Peak Forward Current (T<1ms)
VF
VFM
IR
lP
Dl
V
V
mA
nm
nm
2.10
2.40
100
630
35
1.90
2.10
100
660
20
2.20
2.60
100
568
30
2.20
2.40
100
568
15
2.10
2.40
100
590
15
2.10
2.40
100
610
15
1.90
2.10
100
645
20
1.90
2.40
100
620
20
3.50
4.50
100
470
25
3.50
4.50
100
502
30
3.50
4.50
100
525
35
3.50
4.50
100
---
---
mcd
mlm 3500
-6000
-4000
-6000
-7000
-7500
-13000
-13000
-6000
-7000
-17000
----
4000
I
v
ÆÆ
ÆÆ
Æ
v
AlGaAs GaP/AlInGaP AlInGaP SiC / GaInN
Semiconductor Composition
3.2
2.8
1.8
1.5
3.2
4
120
*NOTE 1.
Use Adequate heatsink (250mm
2
plus) for current above 20mA
750400
0
Wavelength(nm)
500 550450 650 700600
1.0
0.5
SY
RELATIVE INTENSITY VS WAVELENGTH
G/SG
B/W UGSBG SO SRISA UR
WHITE
19-07-2004
KLSL3228
3.5 0.2
+
-
3.2 0.1
+
-
ÆÆ
ÆÆ
Æ2.04
2
1Anode
Common
Cathod
1.85 0.1
+
-
COMMON ANODE
COMMON CATHODE
0.8 0.3
+
-
0.75 0.1
+
-
0.75 0.1
+
-
2. 20
0. 15 2.8 0.1
+
-
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