DSS4240V
Document number: DS31672 Rev. 2 - 2 1 of 5
www.diodes.com March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DSS5240V)
• Low Collector-Emitter Saturation Voltage, VCE(SAT)
• Surface Mount Package Suited for Automated Assembly
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.003 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 2 A
Peak Pulse Collector Current ICM 3 A
Base Current (DC) IB 300 mA
Peak Base Current IBM 1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD 600 mW
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C R
θ
JA 208 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Top View Bottom View Device Schematic Pin Out Configuration
123
654
1, 2, 5, 6
3
4
DSS4240V
Document number: DS31672 Rev. 2 - 2 2 of 5
www.diodes.com March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V
(
BR
)
CBO 40 ⎯ ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5) V
(
BR
)
CEO 40 ⎯ ⎯ V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 5 ⎯ ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICBO ⎯ ⎯ 100
50 nA
μA VCB = 40V, IE = 0
VCB = 40V, IE = 0, TA = 150°C
Collector Cutoff Current ICES ⎯ ⎯ 100 nA
VCE = 40V, VEB = 0
Emitter Cutoff Current IEBO ⎯ ⎯ 100 nA
VEB = 5V, IC = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
300
300
200
75
⎯
⎯
⎯
⎯
⎯
900
⎯
⎯
⎯
VCE = 5V, IC = 1mA
VCE = 5V, IC = 500mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
Collector-Emitter Saturation Voltage VCE(SAT)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
75
100
190
400
mV
IC = 100mA, IB = 1mA
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC = 2A, IB = 200mA
Collector-Emitter Saturation Resistance RCE
(
SAT
)
⎯ ⎯ 190 mΩ IC = 1A, IB = 100mA
Base-Emitter Saturation Voltage VBE
(
SAT
)
⎯ ⎯ 1.2 V
IC = 1A, IB = 100mA
Base-Emitter Turn On Voltage VBE
(
ON
)
⎯ ⎯ 1.1 V
VCE = 5V, IC = 1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ ⎯ 10 pF
VCB = 10V, f = 1.0MHz
Current Gain-Bandwidth Product fT 150 ⎯ ⎯ MHz VCE = 10V, IC = 50mA, f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time ton ⎯ 70 ⎯ ns
VCC = 10V, IC = 1A,
IB1 = IB2 = 50mA
Delay Time td ⎯ 20 ⎯ ns
Rise Time t
r
⎯ 50 ⎯ ns
Turn-Off Time toff ⎯ 310 ⎯ ns
Storage Time ts ⎯ 270 ⎯ ns
Fall Time tf ⎯ 40 ⎯ ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
200
400
25 50 75 100 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Dissipation vs.
Am bi ent Tem per at ure ( No te 3)
A
600
0
R = 208°C/W
θ
JA
300
500
100
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
0.001
0.1
1
10
I,
LLE
EN
(A )
C
0.01
Pw = 100ms
Pw = 10ms
Pw = 1ms
DC
DSS4240V
Document number: DS31672 Rev. 2 - 2 3 of 5
www.diodes.com March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
1,000
0
200
400
600
800
1,200
h, D
E
AI
FE
1,000
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 5V
CE
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation V oltage
vs. C ollecto r Cu r r ent
0.1 1,000
0.001
0.01
0.1
1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Tu rn-On Voltage
vs. Col lector Cu r re nt
1
0
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 5V
CE
0.1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 T y pical Base-Emitter Saturation Vo ltage
vs. Col lector Cu r re nt
11,000
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE- EM I
E
SA
A
I
N V
L
A
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0
30
60
90
120
150
180
C
A
P
A
C
I
T
AN
C
E (p
F
)
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Ty pical Capacitance Characteristics
C
ibo
C
obo
f = 1MHz
DSS4240V
Document number: DS31672 Rev. 2 - 2 4 of 5
www.diodes.com March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Fig. 8 Transient Thermal Response (Note 3)
t , PULSE DURATION TIME (s)
1
1,000
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 180°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Ordering Information (Note 6)
Part Number Case Packaging
DSS4240V-7 SOT-563 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
ZN8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
A
M
L
BC
H
K
GD
ZN8
Y
M
DSS4240V
Document number: DS31672 Rev. 2 - 2 5 of 5
www.diodes.com March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
X
Z
Y
C1
C2
C2
G