12/2007
AWL9925 Die
2.4/5 GHz 802.11a/b/g/n
WLAN Power Amplier Die
Data Sheet - Rev 2.1
D1 Package
19 Pad 1.9 mm x 1.675 mm Die
Figure 1: Block Diagram
FEATURES
• 3.6% EVM @ POUT = +19 dBm with IEEE
802.11a 64 QAM OFDM at 54 Mbps
• 2.7% EVM @ POUT = +20 dBm with IEEE
802.11g 64 QAM OFDM at 54 Mbps
• -46 dBr ACPR 1st Sidelobe, +22 dBm with
802.11b CCK/DSSS Root Cosine Filtering
( = 0.35),1 Mbps
• -58 dBr ACPR 2nd sidelobe, +22 dBm with
802.11b CCK/DSSS Root Cosine Filtering
( = 0.35), 1 Mbps
• 32 dB of Linear Power Gain at 2.4 GHz
• 32 dB of Linear Power Gain at 5 GHz
• Single +3.3 V Supply
• Dual Temperature-Compensated Linear Power
Detectors
• Lead-Free and RoHS-Compliant Package
• 50 Ω - Matched RF Ports
• 1 kV ESD Rating (HBM)
APPLICATIONS
• 802.11a/b/g/n WLAN
PRODUCT DESCRIPTION
The ANADIGICS AWL9925 dual band power amplier
is a high performance InGaP HBT power amplier
die designed for transmit applications in the 2.4-2.5
and 4.9-5.9 GHz bands. Matched to 50 at all RF
inputs and outputs, the die requires no additional RF
matching components off-chip, making the AWL9925
the world’s simplest dual band PA die implementation
available. The AWL9925 die requires six external
passives used for RF choking and DC bias decoupling.
The PAs exhibit unparalleled linearity and efciency for
IEEE 802.11g, 802.11b and 802.11a WLAN systems
under the toughest signal congurations within these
standards.
The power detectors are temperature compensated on
die, enabling separate single-ended output voltages
for each band with excellent accuracy over a wide
range of operating temperatures. The PA die is biased
by a single +3.3 V supply and consumes ultra-low
current in the OFF mode.
The AWL9925 is manufactured using advanced InGaP
HBT technology that offers state-of-the-art reliability,
temperature stability and ruggedness. This document
species the electrical performance, application circuit,
and ordering information. Electrical performance
noted in this datasheet is most achievable when
the application circuit and reference platform
recommendations are followed.
AWL9925
Die
Bias Control
VCCVPC
2.4 GHz
RFIN
2.4 GH
z
RF O U T
Matching
Network
GND
2.4 GHz
Power Detector
Bias Control
VCCVPC
5 GHz
RFIN
5 GHz
RF O U T
GND 5 GHz
Power Detector
Matching
Network
Matching
Network
Matching
Network
2Data Sheet - Rev 2.1
12/2007
AWL9925 Die
Table 1: Bond Pad Description
Bond
Pad NAME DESCRIPTION
1PA
ON
2G
2 GHz On/Off Control. The recommended use is for On/Off control of the PA.
Nominally, 0 V applied will turn amplifier completely off; +3.3 V should be used to
set amplifier to maximum output capability.
22G Speed-Up
Cap
2 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
32G Speed-Up
Cap
2 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
4RF
IN
2G
2 GHz RF Input. ESD protection circuits on this pin provide a DC path to ground.
Avoid applying DC voltage to this pin. RF is internally matched to 50 and AC
coupled to the input stage. Route RF trace as coplanar waveguide as much as
possible.
5RF
IN
5G
5 GHz RF Output. A shunt inductive matching element included inside the PA
provides a DC path to ground at this pin. Avoid applying DC voltage to this pin.
RF is internally matched to 50 and AC coupled to the input stage. Route RF
trace as coplanar waveguide as much as possible.
65G Speed-Up
Cap
5 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
75G Speed-Up
Cap
5 GHz speed-up cap. An off-die cap is required to accelerate turn-on ramp time to
improve EVM in dynamic burst conditions.
8PA
ON
5G
5 GHz On/Off Control. Power amplifier power control pin. The recommended use
is for on/off control of the PA. Nominally, 0 V applied will turn amplifier completely
off; +3.3 V should be used to set amplifier to maximum output capability.
9V
CC1
5G 5 GHz supply voltage. Bias for 5 GHz On/Off control circuit.
10 V
CC2
5G 5 GHz supply voltage. Bias for 5 GHz bias control circuit.
11 V
CC3
5G 5 GHz supply voltage. Bias for 1st and 2nd stage power transistors of the 5 GHz PA.
12 V
CC4
5G 5 GHz supply voltage. Bias for 3rd stage power transistors of the 5 GHz PA.
13 DET
OUT
5G 5 GHz Power Detector Output. DC coupled power detector output. An emitter
follower BJT supplies the output for this pin.
14 RF
OUT
5G
5 GHz RF Output. AC coupled output stage internally matched to 50 . Route RF
trace as coplanar waveguide. Although the output stage is AC coupled, a shunt
inductive matching element included inside the PA provided a DC path to ground
at the pin.
15 RF
OUT
2G
2 GHz RF Output. ESD protection circuits on this pin provide a DC path to ground.
Avoid applying DC voltage to this pin. RF is internally matched to 50 and AC
coupled to the output stage. Route RF traces as coplanar waveguide.
16 DET
OUT
2G 2 GHz Power Detector Output. DC coupled power detector output. An emitter
follower BJT supplies the output for this pin.
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions dened in the electrical specications.
Table 1: Bond Pad Description (Continued)
Bond
Pad NAME DESCRIPTION
17 V
CC3
2G 2 GHz supply voltage. Bias for 3rd stage power transistors of the 2GHz PA.
18 V
CC2
2G
2 GHz supply voltage. Bias for 1st and 2nd stage power transistors of the 2GHz PA.
19 V
CC1
2G 2 GHz supply voltage. Bias for 2 GHz On/Off control circuit.
PARAMETER MIN MAX UNIT COMMENTS
DC Power Supply Voltage (VCC 2 G,
VCC 5G) -+4.5 V
DC Power Control Voltage (PAON 2 G,
PAON 5G) -+4.5 VNo RF signal applied.
DC Current Consumption -700 mA Either PA powered separately
RF Input Level (RFIN 2 G, R F IN 5G) --5 dBm
Operating Case Temperature -40 +85 °C When mounted in reference
platform
Storage Temperature +15 +30 °C Extended Storage
Storage Relative Humidity -60 %
Shipping Temperature -55 +150 °C
Shipping Relative Humidity -60 %
ESD Tolerance 1000 - V All pins, forward and reverse
voltage. Human body model.
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency (f) 2400
4900
-
-
2500
5900 MHz 802.11b/g
802.11a
DC Power Supply Voltage (VCC 2 G,
VCC 5G) +3.0 +3.3 +3.6 VWith RF Applied
On/Off Power Control Voltage (PAON 2 G,
PAON 5G)
+2.0
0
+3.3
-
+3.6
+0.8 VPA "ON"
PA "SHUTDOWN"
Operating Case Temperature (TC)-40 -+85 °C When mounted in
reference platform
4Data Sheet - Rev 2.1
12/2007
AWL9925 Die
Table 4: Electrical Specications - 2.4 GHz Continuous Wave
(TC = +25 °C, VCC 2G = +3.3 V, PAON 2G = +3.3 V)
PARAMETER MIN TYP MAX UNIT COMMENTS
P1dB 24.5 26.0 -dBm
Shutdown Current -30 270 APA
ON
2G = 0 V
Quiescent Current 50 75 95 mA PA
ON
2G > +2.0 V, V
CC
2G = +3.3 V
RF = OFF
Input Return Loss --13 -8 dB
Output Return Loss --9 -4 dB
Out of Band Rejection
1 GHz
1.75 GHz
3.2 GHz
4.7 GHz
20
0
5
38
-
-
-
-
-
-
-
-
dB
Reverse Isolation 40 - - dB
Stability (Spurious) - - -60 dBc 6:1 VSWR, at P
OUT
= +23 dBm, -5 OC
T
ON
Setting Time - - 1SSettles within 0.5 dB
T
OFF
Setting Time - - 1S
PA
ON
2G Pin Input
Impedance -6.2 - kMeasured with +3.3 V applied to PA
ON
2G
pin
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
5
Table 5: Electrical Specications - 5 GHz Continuous Wave
(TC = +25 °C, VCC 5G = +3.3 V, PAON 5G = +3.3 V)
PARAMETER MIN TYP MAX UNIT COMMENTS
P1dB 23.0 24.5 -dBm
Shutdown Current -32 270 APA
ON
5G = 0 V
Quiescent Current 82 120 160 mA PA
ON
5G > +2.0 V, V
CC
5G = +3.3 V
RF = OFF
Input Return Loss --20 -10 dB
Output Return Loss --18 -10 dB
Out of Band Rejection
1.5 GHz
3.5 GHz
4 GHz
6.5 GHz
9 GHz
35
12.5
5
5
30
-
-
-
-
-
-
-
-
-
-
dB
Reverse Isolation 40 - - dB
Stability (Spurious) - - -60 dBc 6:1 VSWR, at P
OUT
= +22 dBm; -5
O
C
T
ON
Setting Time - - 1SSettles within 0.5 dB
T
OFF
Setting Time - - 1S
PA
ON
5G Pin Input
Impedance -6.2 - kMeasured with +3.3 V applied to PA
ON
5G
pin
6Data Sheet - Rev 2.1
12/2007
AWL9925 Die
Table 6: Electrical Specications - IEEE 802.11g
(TC = +25 °C, VCC 2G = +3.3 V, PAON 2G = +3.3 V, 64 QAM OFDM 54 Mbps)
Notes:
(1) EVM includes system noise oor of 1% (-40 dB).
(2) Spectrum analyzer settings: RBW = 1 MHz; Span = 100 MHz.
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency 2400 -2500 MHz
Power Gain 29 32 35 dB
Gain Ripple -0.2 0.5 dB Across 100 MHz band
Error Vector Magnitude (EVM) -
-
2.7
-31.4
4.5
-27
%
dB
802.11g 54 Mbps data rate
P
OUT
2G = +20 dBm (1)
Current Consumption -185 215 mA P
OUT
2G = +20 dBm
Harmonics
2fo
3fo
-
-
-53
-54
-39
-48 dBc P
OUT
2G = +23 dBm (2)
Power Detector Voltage 875 1025 1155 mV P
OUT
2G = +20 dBm
Power Detector Voltage Range 100 -1155 mV -5 < P
OUT
2G < +20 dBm
Power Detector dB Range 25 - - dB -5 < P
OUT
2G < +20 dBm
Minimum Detector Power - - -5 dBm
Maximum Detector Power 20 - - dBm
Power Detector Resolution 10 - - mV/dB
Power Detector Variance over
Frequency -0.5 2.9 dB 2.4 - 2.5 GHz
Power Detector Output Load
Impedance 2- - k
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
7
Table 7: Electrical Specications - IEEE 802.11b
(TC = +25 °C, VCC 2G = +3.3 V, PAON 2G = +3.3 V, CCK/DSSS, 1 Mbps,
Gaussian Baseband Filtering, BT = 0.5)
Note:
(1) Spectrum analyzer settings: RBW = 1 MHz; Span = 100 MHz.
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency 2400 -2500 MHz
Power Gain 29 32 35 dB
Gain Ripple -0.2 0.5 dB Across 100 MHz band
Adjacent Channel Power (ACPR)
1st Sidelobe (11 MHz Offset) --35 -33 dBr
1 Mbps, Gaussian
Baseband filtering (BT =
0.5), P
OUT
2G = +20 dBm
Adjacent Channel Power (ACPR)
2nd Sidelobe (22 MHz Offset) --55 -53 dBr
1 Mbps, Gaussian
Baseband filtering (BT =
0.5), P
OUT
2G = +20 dBm
Current Consumption -190 225 mA P
OUT
2G = +20 dBm
Harmonics
2fo
3fo
-
-
-60
-53
-50
-43 dBc P
OUT
2G = +23 dBm (1)
Power Detector Voltage 925 1075 1250 mV P
OUT
2G = +20 dBm
Power Detector Voltage Range 100 -1250 mV -5 < P
OUT
2G < +20 dBm
Power Detector dB Range 25 - - dB -5 < P
OUT
2G < +20 dBm
Minimum Detector Power - - -5 dBm
Maximum Detector Power 20 - - dBm
Power Detector Resolution 10 - - mV/dB
Power Detector Variance over
Frequency -0.5 2.6 dB 2.4 - 2.5 GHz
Power Detector Output Load
Impedance 2- - k
8Data Sheet - Rev 2.1
12/2007
AWL9925 Die
Table 8: Electrical Specications - IEEE 802.11a
(TC = +25 °C, VCC 5G = +3.3 V, PAON 5G = +3.3 V, 64 QAM OFDM 54 Mbps)
Notes:
(1) EVM includes system noise oor of 1% (-40 dB).
(2) Spectrum analyzer settings: RBW = 1 MHz; Span = 100 MHz.
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency 4900 -5900 MHz
Power Gain
27
30
30
28
30
33.5
33.5
31
34
38
36.5
35.5
dB
4.9 GHz
5.25 GHz
5.55 GHz
5.85 GHz
Gain Ripple -0.5 2.0 dB Across any 100 MHz band
Error Vector Magnitude (EVM) -3.6
-29
4.5
-27
%
dB
802.11a 54 Mbps data rate
POUT 5G = +19 dBm
4.9 - 5.85 GHz (1)
Current Consumption -215 250 mA POUT 5G = +19 dBm
Harmonics
2fo
3fo
-
-
-40
-50
-34
-43 dBc POUT 5G = +20 dBm (2)
Power Detector Voltage 910 1070 1225 mV POUT 5G = +19 dBm
Power Detector Voltage Range 100 -1225 mV -5 < POUT 5G < +20 dBm
Power Detector dB Range 25 - - dB -5 < POUT 5G < +20 dBm
Minimum Detector Power - - -5 dBm
Maximum Detector Power 20 - - dBm
Power Detector Resolution 10 - - mV/dB 4.9 - 5.85 GHz
Power Detector Variance over
Frequency -1.1 4.7 dB 4.9 - 5.85 GHz
Power Detector Output Load
Impedance 2- - k
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
9
Figure 2: Gain and ICC vs. Output Power Across
Frequency (VCC = +3.3 V, TC = +25oC)
802.11g 54 Mbps OFDM
Figure 5: EVM vs. Output Power Across
Frequency (VCC = +3.3 V, TC = 25oC)
802.11g 54 Mbps OFDM
Figure 3: Gain and ICC vs. Output Power Across
Temp (Frequency = 2.45 GHz, VCC = +3.3 V)
802.11g 54 Mbps OFDM
Figure 6: EVM vs. Output Power Across Temp
(Frequency = 2.45 GHz, VCC = +3.3 V)
802.11g 54 Mbps OFDM
802.11g PERFORMANCE DATA
Figure 4: Gain and ICC vs. Output Power Across
Power Supply Voltage (Freq = 2.45 GHz, TC =
25oC) 802.11g 54 Mbps OFDM
Figure 7: EVM vs. Output Power Across Power
Supply Voltage (Freq = 2.45 GHz, TC = 25oC)
802.11g 54 Mbps OFDM
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 2.40 GHz
Gain 2.45 GHz
Gain 2.50 GHz
Current 2.40 GHz
Current 2.45 GHz
Current 2.50 GHz
Gain
Current
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 0C
Gain +25C
Gain +50C
Gain +85C
Current 0C
Current +25C
Current +50C
Current +85C
Current
Gain
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 3.0V
Gain 3.3V
Gain 3.6V
Icc 3.0V
Icc 3.3V
Icc 3.6V
Gain
Current
0
1
2
3
4
5
6
7
8
9
10
11
12
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 2.40 GHz
EVM 2.45 GHz
EVM 2.50 GHz
0
1
2
3
4
5
6
7
8
9
10
11
12
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 0C
EVM +25C
EVM +50C
EVM +85C
0
1
2
3
4
5
6
7
8
9
10
11
12
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 3.0V
EVM 3.3V
EVM 3.6V
10 Data Sheet - Rev 2.1
12/2007
AWL9925 Die
802.11g PERFORMANCE DATA
Figure 8: Detector Voltage vs. Output Power
Across Frequency (TC = 25oC, VCC = +3.3 V)
802.11g 54 Mbps OFDM
Figure 10: Detector Voltage vs. Output Power
Across Power Supply Voltage (Freq = 2.45 GHz,
TC = 25oC) 802.11g 54 Mbps OFDM
Figure 9: Detector Voltage vs. Output Power
Across Temperature (Freq = 2.45 GHz, VCC = +3.3 V)
802.11g 54 Mbps OFDM
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
01234567891011121314151617181920212223
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 2.40GHz
Det. Volt. 2.45GHz
Det. Volt. 2.50GHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 0C
Det. Volt. 25C
Det. Volt. 50C
Det. Volt. 85C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 3.0V
Det. Volt. 3.3V
Det. Volt. 3.6V
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
11
Figure 11: Gain and ICC vs. Output Power Across
Frequency (VCC = +3.3 V, TC = +25oC)
802.11b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 14: ACPR vs. Output Power Across
Frequency (VCC = +3.3 V, TC = 25oC)
802.11b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 12: Gain and ICC vs. Output Power Across
Temp (Freq = 2.45 GHz, VCC = +3.3 V)
802.11b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 15: ACPR vs. Output Power Across Temp
(Freq = 2.45 GHz, VCC = +3.3 V)
802.11b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 13: Gain and ICC vs. Output Power
Across Power Supply Voltage (Freq = 2.45 GHz,
TC = 25oC) 802.11b Gaussian Filtering
(BT = 0.5), 1 Mbps
Figure 16: ACPR vs. Output Power Across Power
Supply Voltage (Freq = 2.45 GHz, TC = 25oC)
802.11b Gaussian Filtering (BT = 0.5), 1 Mbps
802.11b PERFORMANCE DATA
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 2.40 GHz
Gain 2.45 GHz
Gain 2.50 GHz
Current 2.40 GHz
Current 2.45 GHz
Current 2.50 GHzCurrent
Gain
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 0C
Gain +25C
Gain +50C
Gain +85C
Current 0C
Current +25C
Current +50C
Current +85C
Gain
Current
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 3.0V
Gain 3.3V
Gain 3.6V
Icc 3.0V
Icc 3.3V
Icc 3.6V
Gain
Current
-62
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
ACPR Sidelobe (dBr)
1st Sidelobe 2.40GHz
1st Sidelobe 2.45GHz
1st Sidelobe 2.50GHz
2nd Sidelobe 2.40GHz
2nd Sidelobe 2.45GHz
2nd Sidelobe 2.50GHz
-62
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
ACPR Sidelobe (dBr)
1st Sidelobe 0C
1st Sidelobe 25C
1st Sidelobe 50C
1st Sidelobe 85C
2nd Sidelobe 0C
2nd Sidelobe 25C
2nd Sidelobe 50C
2nd Sidelobe 85C
-62
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
ACPR Sidelobe (dBr)
1st Sidelobe 3.00V
1st Sidelobe 3.30V
1st Sidelobe 3.60V
2nd Sidelobe 3.00V
2nd Sidelobe 3.30V
2nd Sidelobe 3.60V
12 Data Sheet - Rev 2.1
12/2007
AWL9925 Die
Figure 17: Detector Voltage vs. Output Power
Across Frequency (TC = 25oC, VCC = +3.3 V)
802.11b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 19: Detector Voltage vs. Output Power
Across Power Supply Voltage (Freq = 2.45 GHz,
TC = 25oC) 802.11b Gaussian Filtering
(BT = 0.5), 1 Mbps
Figure 18: Detector Voltage vs. Output Power
Across Temp (Freq = 2.45 GHz, VCC = +3.3 V)
802.11b Gaussian Filtering (BT = 0.5), 1 Mbps
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 2.40GHz
Det. Volt. 2.45GHz
Det. Volt. 2.50GHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 0C
Det. Volt. 25C
Det. Volt. 50C
Det. Volt. 85C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 3.0V
Det. Volt. 3.3V
Det. Volt. 3.6V
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
13
802.11a PERFORMANCE DATA
Figure 20: Gain and ICC vs. Output Power Across
Frequency (VCC = +3.3 V, TC = +25oC)
802.11a 54 Mbps OFDM
Figure 23: EVM vs. Output Power Across
Frequency (VCC = +3.3 V, TC = 25oC)
802.11a 54 Mbps OFDM
Figure 21: Gain and ICC vs. Output Power Across
Temp (Freq = 5.25 GHz, VCC = +3.3 V)
802.11a 54 Mbps OFDM
Figure 24: EVM vs. Output Power Across Temp
(Freq = 5.25 GHz, VCC = +3.3 V)
802.11a 54 Mbps OFDM
Figure 22: Gain and ICC vs. Output Power
Across Power Supply Voltage (Freq = 5.25 GHz,
TC = 25oC) 802.11a 54 Mbps OFDM
Figure 25: EVM vs. Output Power Across Power
Supply Voltage (Freq = 5.25 GHz, TC = 25oC)
802.11a 54 Mbps OFDM
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
Current (mA)
Gain 4.90 GHz
Gain 5.25 GHz
Gain 5.55 GHz
Gain 5.85 GHz
Icc 4.90 GHz
Icc 5.25 GHz
Icc 5.55 GHz
Icc 5.85 GHz
Current
Gain
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
Current (mA)
Gain 0C
Gain +25C
Gain +50C
Gain +85C
Current 0C
Current +25C
Current +50C
Current +85C
Current
Gain
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
Current (mA)
Gain 3.0V
Gain 3.3V
Gain 3.6V
Icc 3.0V
Icc 3.3V
Icc 3.6V
Current
Gain
0
1
2
3
4
5
6
7
8
9
10
11
12
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 4.90 GHz
EVM 5.25 GHz
EVM 5.55 GHz
EVM 5.85 GHz
0
1
2
3
4
5
6
7
8
9
10
11
12
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 0C
EVM +25C
EVM +50C
EVM +85C
0
1
2
3
4
5
6
7
8
9
10
11
12
8910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 3.0V
EVM 3.3V
EVM 3.6V
14 Data Sheet - Rev 2.1
12/2007
AWL9925 Die
Figure 26: Detector Voltage vs. Output Power
Across Frequency (TC = 25oC, VCC = +3.3 V)
802.11a 54 Mbps OFDM
Figure 28: Detector Voltage vs. Output Power
Across Power Supply Voltage (Freq = 5.25 GHz,
TC = 25oC) 802.11a 54 Mbps OFDM
Figure 27: Detector Voltage vs. Output Power Across
Temperature (Freq = 5.25 GHz, VCC = +3.3 V)
802.11a 54 Mbps OFDM
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 4.90GHz
Det. Volt. 5.25GHz
Det. Volt. 5.55GHz
Det. Volt. 5.85GHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 0C
Det. Volt. 25C
Det. Volt. 50C
Det. Volt. 85C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 3.0V
Det. Volt. 3.3V
Det. Volt. 3.6V
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
15
Figure 29: 2.4 GHz Return Losses Across
Frequency (VCC = +3.3 V, TC = 25oC)
S-PARAMETER PERFORMANCE DATA
Figure 30: 2.4 GHz S21 Response Across
Frequency (VCC = +3.3 V, TC = 25oC)
Figure 31: 5 GHz Return Losses Across
Frequency (VCC = +3.3 V, TC = 25oC)
Figure 32: 5 GHz S21 Response Across
Frequency (VCC = +3.3 V, TC = 25oC)
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.511.5 22.5 33.5 44.5 5
Frequency (GHz)
Return Loss (dB)
Input Return Loss
Output Return Loss
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
32
36
40
0.511.522.533.544.55
Frequency (GHz)
S21 Response (dB)
S21 Response
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
012345678910
Frequency (GHz)
Return Loss (dB)
Input Return Loss
Output Return Loss
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
32
36
40
012345678910
Frequency (GHz)
S21 Response (dB)
S21 Response
16 Data Sheet - Rev 2.1
12/2007
AWL9925 Die
APPLICATION INFORMATION
Figure 33: Application Circuit
The application circuit connections to the die are made
using bond wires, which are connected to bond pads
on the die. The die bond pads are labeled as “BPX”
in Figure 33. Although not shown in the application
schematic, a 1 F capacitor should be connected to
the 2.4 GHz and 5 GHz voltage supply lines for low
frequency decoupling.
V1
Speed-up
Cap
AWL9925
Die
PAON 2G
BP1
RFIN 2G
RFIN 5G
BP9
L2
4.7 nH
C4
0.1 F
Speed-up
Cap
Speed-up
Cap
Speed-up
Cap
PAON 5G
DETOUT 2G
DETOUT 5G
2G ANT
5G ANT
2.4 GHz VCC
5 GHz
PA On
2.4 GHz
PA On
2.4 GHz
PA Input
5 GHz
PA Input
2.4 GHz
PA Output
5 GHz
PA Output
L1
6.8 nH
C1
0.1 F
C2
0.1 F
C3
0.1 F
V1
V4
V3
V2
V3
V2
5 GHz Power
Detector Outpu
t
2 GHz Power
Detector Outpu
t
BP11
BP10
BP12
BP19
BP17
BP18
BP8
BP7
BP6
BP5
BP4
BP3
BP2
BP13
BP16
BP15
BP14
5 GHz VCC
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
17
AWL9925 REFERENCE PLATFORM
ANADIGICS has dened the AWL6950 evaluation
board test platform for testing the performance of the
die. ANADIGICS’ documentation for the AWL6950
evaluation board includes all necessary information
regarding schematics, bill of materials and assembly
instructions. When the die is mounted in the specied
test platform, performance as specified in the
datasheet is expected.
Table 9: SMD Components Summary for Application Circuit
REF DESCRIPTION COMMENTS
C1 0.1 F2.4 GHz bias de-coupling cap
C2 0.1 F2.4 GHz speed-up cap; required to accelerate turn-on ramp to improve EVM in
dynamic burst conditions
C3 0.1 F5 GHz speed-up cap; required to accelerate turn-on ramp to improve EVM in
dynamic burst conditions
C4 0.1 F5 GHz bias de-coupling cap
L1 6.8 nH 2.4 GHz 3rd stage choke inductor
L2 4.7 nH 5 GHz 3rd stage choke inductor
18 Data Sheet - Rev 2.1
12/2007
AWL9925 Die
DIE DIMENSIONS
Overall dimensions of the die are 1675 m x 1900 m.
Locations of die bond pads relative to the outline of the
die are shown in Figure 34. Unless otherwise noted,
bond pads are 75 m x 75 m.
Figure 34: Die Bond Pad Locations Relative to the Die Outline (Dimensions shown in mm)
Data Sheet - Rev 2.1
12/2007
AWL9925 Die
19
WAFER DIMENSIONS
Wafer dimensions, layout and wafer mark location are shown in Figure 35.
Figure 35: Die Dimensions and Tolerances (Dimensions shown in mm)
MANUFACTURING INFORMATION
ANADIGICS provides 150 mm AWL9925 wafers
with DC die-probe failures clearly marked with ink.
Wafers are marked with bulk material code which is
traceable through wafer processing. Post process
wafers maintain traceability from labels fastened to
the wafer carrier post dicing. ANADIGICS performs
on-wafer DC testing on the AWL9925, as well as visual
inspection after dicing (per ANADIGICS specication
number 60002.003). Maximum chipping specication
is also dened by this specication. Performance is
tested at wafer level using PCM sites. There are 5 PCM
locations uniformly distributed on the wafer. Wafer
tests include NiCr sheet resistivity, MIM capacitor
capacitance and transistor forward transfer current
ratio (Hfe) under different bias conditions.
AWL9925 PURCHASING UNIT
Parts will be purchased as die but shall be shipped in
wafer format on a wafer frame. Parts that pass visual
inspection and DC die-probe tests will be free of ink
markings and can therefore be distinguished from
test failures.
AWL9925 PACKING AND DELIVERY
SPECIFICATIONS
The diced wafers are placed on adhesive tape (Nitto/
Denko P/N SPV224) in a film frame (Perfection
Products P/N FFP-7290-15 or equivalent, ANADIGICS
Part No. 6103), which is shrink-wrapped with desiccant
prior to storage or shipment.
The lm frame is to be clearly labeled with the
following information:
1. Item Name
2. Manufacturing Date
3. Expiration Date
4. Manufacturer’s Name
5. Country of Origin
6. Good Die Quantity
Prior to shipment, the individual wafers are placed in
anti-static wafer frame shipping containers (ePAK P/N
EFS6-150-R.3-EM-20 or equivalent, ANADIGICS Part
No. 5430). The lm frame cassettes are vacuum sealed
in ESD bags along with desiccant prior to storage or
shipment.
Wafer frame shipment containers are packed in
protective material for shipment. An invoice is included
in each shipping container.
EXTENDED DIE STORAGE
Once the ESD bag is opened (the vacuum seal is
broken), AWL9925 die in the lm frame cassette should
be stored in a dry nitrogen environment. The die and
cassette can be stored in dry nitrogen up to 12 months
from the manufacturing date noted on the lm frame.
Storage beyond 12 months could cause increased die
adhesion to the lm frame tape resulting in damage
during die removal.
0.100 typical (finished)
Ø150±0.3
LASER MARK
LOCATION
(100) FACE
NOTCH
(011)
(010)
(011)
_
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
Data Sheet - Rev 2.1
12/2007
20
AWL9925 Die
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE
RANGE
PACKAGE
DESCRIPTION COMPONENT PACKAGING
AWL9925RD1P5 -40 °C to +85°C 19 Pad
1.9 mm x 1.675 mm Die Waffle Pack
AWL9925RD1Q4 -40 °C to +85°C 19 Pad
1.9 mm x 1.675 mm Die 6" Wafer on Film Frame
