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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Primary Applications
Product Description
Key Features
Measured Performance
CATV Linear Amplifier
• Frequency Range: 40MHz - 1GHz
• Gain: 20 dB
• 1.7 dB 75 ΩNoise Figure
• Ultra-Low Distortion: -67dBc ACPR typical
• Low DC Power Consumption
• Single Supply Bias:+8V, 380mA
• 28L Package Dimension: 5.0 x 5.0 x 0.85 mm
• CMTS Equipment
• CATV Line Amplifiers
The TriQuint TGA2806-SM is an ultra-linear,
packaged Gain Block which operates from
40MHz to 1000MHz.
The TGA2806-SM typically provides flat gain
along with ultra-low distortion. It also provides
high output power with low DC power
consumption.
This amplifier is ideally suited for use in CATV
distribution systems or other applications
requiring extremely low noise and distortion.
Demonstration Boards are available.
Lead-free and RoHS compliant.
Small Signal Gain (75 Ω)
includes balun losses
Output TOI (75 Ω)
2
TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table II
Recommended Operating Conditions
Table I
Absolute Maximum Ratings 1/
Symbol Parameter Value Notes
Vd-Vg Drain to Gate Voltage 11 V
Vd1, Vd2 Drain Voltage 10 V 2/
Vg1 Gate Voltage Range -1 to 3 V
Vg2 Gate Voltage Range 0 to 5 V
Id1 Drain Current 275 mA 2/
Id2 Drain Current 275 mA 2/
Pin Input Continuous Wave Power per RF input 25 dBm 2/
Tchannel Channel Temperature 200 °C 1/
1/ These ratings represent the maximum operable values for this device. Stresses beyond those
listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or
affect device lifetime. These are stress ratings only, and functional operation of the device at
these conditions is not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed
the maximum power dissipation listed in Table IV.
Symbol Parameter 1/ Value Value 2/Value 2/
Vd1, Vd2 Bias Supply Voltage 8 V 8 V 9 V
Id1 + Id2 Bias Supply Current 380 mA 350 mA 380 mA
Vg1 Gate 1 Voltage (Pin 26) 1.1 V 0.9 V 1.0 V
Vg2 Gate 2 Voltage (Pin 10) 3.2 V 2.67 V 3.0 V
R1 / R2 External Bias Resistors 6.8k / 10k open / open open / open
1/ The amplifier is self-biased.
2/ These gate voltages are developed internally using on-chip resistive divider networks.
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table III
RF Characterization Table 1/
T
A
=25°C, Vd1, Vd2=9V
Symbol Paramete
r
Min Typ Max Units Note
BW
Bandwidth 40 1000 MHz
S
21
Power Gain 17 20 24 dB 2/
GF Gain Flatness ± 0.3 dB
ACPR1 Adjacent Channel Power Ratio -63 -66 dBc 2/
NF
Noise Figure 1.7 dB
TZ
Transimpedance 800
Ω
I
n
Equivalent Input Current Noise 5 pA/rtHz 3/
IP
3
Two-Tone, Third-Order Intercept (450 MHz) 46 dBm 4/
IP
3
Two-Tone, Third-Order Intercept (750 MHz) 42 dBm 4/
IRL Input Return Loss 16 dB
ORL Output Return Loss 20 dB
Id1 + Id2 Drain Current 250 380 500 mA 5/
P_sat
Saturated Output Power (320 MHz) 28 dBm
1/ Using application circuit on pg. 7, resistors R1 and R2 are left open
2/ Measured at 858MHz with a single 6MHz wide channel, 256QAM signal at 62 dBmV average
output power (into 75 Ω). ACP is measured in the channel that is offset from the signal band edge
by 750kHz to 6MHz. Gain is also measured at this frequency.
3/ Measured with open-circuited input
4/ 16dBm output power per tone
5/ Increasing drain current will improve linearity of device
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table IV
Power Dissipation and Thermal Properties
Parameter Test Conditions Value Notes
Maximum Power Dissipation Tbaseplate = 85 °C Pd = 5.5 W
Tchannel = 168 °C
Tm = 2.4E+5 Hrs
1/ 2/
Thermal Resistance, θjc Vd1, Vd2 = 9 V
Id1+Id2 = 380 mA
Pd = 3.42 W
θjc = 15.1 (°C/W)
Tchannel = 137 °C
Tm = 3.1E+6 Hrs
Mounting Temperature 30 Seconds 260 °C
Storage Temperature -65 to 150 °C
1/ For a median life of 1E+6 hours, Power Dissipation is limited to
Pd(max) = (150 °C – Tbase °C)/θjc.
2/ Channel operating temperature will directly affect the device median time to failure (Tm). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
Median Lifetime (Tm) vs. Channel Temperature
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Typical Measured ACPR and TOI
Using Application Circuit
Vd1, Vd2 = 9 V, Id1+Id2 = 380mA typ
(includes effects of external baluns)
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Typical Measured S-Parameters (75 Ω)
Using Application Circuit
Vd1, Vd2 = 8 V, Id1+Id2 = 380mA typ (includes effects of external baluns)
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Application Circuit
RF Input
75 Ω
1:1 Balun
75 Ω
1:1 Balun
1/ Balun performance impacts amplifier return losses, gain and ACPR. Best performance can be achieved by
winding 34 or 36 gauge bifilar wire around a small binocular core made from low-loss magnetic material.
Suitable wire may be obtained from MWS Wire Industries. Core vendors include Ferronics, Fairrite, TDK, and
Micrometals.
Alternatively, off-the-shelf baluns can be purchased from a number of vendors including Mini-Circuits (ADTL1-
18-75), M/A-COM (ETC1-1-13), and Pulse Engineering (CX2071).
2/ Optional external resistors R1 and R2 increase the Vg1 and Vg2 voltages, respectively as described in
Table II. The increased current improves the output TOI by about 1dB.
Ref Des Description
C1, C2 0.01μF
C3, C4 470pF
C5, C6 270pF
L1, L2 820nH
T1, T2 Balun 1/
R1 (optional) 6.8k 2/
R2 (optional) 10k 2/
2, 3
5, 6
19, 20
16, 17
12
10 11
24
26 25
418
+9 V (Vd2)
+9 V (Vd1)
C1
C2
C3
C4
C5
C6
L1
L2
R1
R2
T1 T2
RF Output
TGA2806-SM
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Pin Description Pin Description
2
RF Input 1 16 RF Output 2
3
RF Input 1 17 RF Output 2
4 GND 18, 29 GND
5
RF Input 2 19 RF Output 1
6
RF Input 2 20 RF Output 1
1, 7, 8,14
NC 15, 21, 22, 23 NC
9
GND 24 Vd1 (choked)
10
Vg2 (Optional) 25 Vd1
11 Vd2 26 Vg1 (Optional)
12 Vd2 (choked) 27 GND
13 Isense 28 NC
Notes: Pin 13 (Isense) is used to monitor the drain current across a 4 ohm resistor, if desired
The voltage at pin 13 is Vsense = (Id1+Id2) * 4 Volts
Pins 9 and 27 are internally connected to GND but may be left open
Pins 4 and 18 should be connected to large GND pad (pin 29)
NC pins (1,7,8,14,15,21,22,23,28) are not connected internally; they may be grounded
externally, if desired
2806
0809
1459
29
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
29
Dimensions are in mm
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Recommended Assembly Diagram
Board material: 1.57mm thick FR4
Thirty-six (36) open plated vias in center of land pattern
Vias are 12 mil diameter with 20 mil center-to-center spacing
T1
C1
C2
C3
C4
R1
T2
C5
L1
L2
C6
R2
U1
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TGA2806-SM
Oct 2010 © Rev C
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge . Proper precautions should
be observed during handling, assembly and test.
Assembly Notes
Ordering Information
Recommended Surface Mount Package Assembly
•Proper ESD precautions must be followed while handling packages.
•Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
•TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow
oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles
are listed in the table below.
•Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot
placement. The volume of solder paste depends on PCB and component layout and should be well
controlled to ensure consistent mechanical and electrical performance.
•Clean the assembly with alcohol.
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 °C/sec 3 °C/sec
Activation Time and Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C
Time above Melting Point 60 – 150 sec 60 – 150 sec
Max Peak Temperature 240 °C 260 °C
Time within 5 °C of Peak Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec
Part Package Style
TGA2806-SM, TAPE AND REEL 5mm x 5mm QFN Surface Mount, TAPE AND REEL
