F0530602B
3.3 V Laser Diode Driver
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Features
• Up to 1.3 Gb/s high speed operation
• 3.3 V single power supply
• Up to 35 mA p-p modulation current
• Up to 35 mA bias current
• Maximum bias current preset control
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Applications
• Laser diode driver of an optical transmitter circuit for
SDH (STM4) / SONET (OC-12)
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Functional Description
The F0530601B is a high performance GaAs integrated laser diode driver for use in an
optical transmitter circuit up to 1.3 Gb/s NRZ data rate. The F0530601B typically specifies
rise time and fall time of 300 psec (20 % - 80 %,25 Ω load). It features a low power 3.3 V
supply operation, 1 to 35 mA presettable bias current and up to 35 mA modulation current.
02.08.08
3.3V Operation
Laser Diode Driver
F0530602B
F0530602B
3.3 V Laser Diode Driver
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Absolute Maximum Ratings
Ta=25 °C, unless specified
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Recommended Operating Conditions
Ta=25 °C , VDD=0 V, VSS=-3.3 V, unless specified
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SS
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DD
6.1-V
DD
0.1-V
DD
V
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SS
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SS
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Parameter Symbol Value Units
Supply Voltage - 0.2 to 4.0 V
Supply Current Ickt 150 mA
Modulation Current Iout 70 mA
Bias Current Ioutbi 70 mA
Input Voltage Vin V
Junction Operating Temperature Tj 0 to +140 °C
Storage Temperature -55 to +150 °C
V
DD
, V
SS
V
SS
to V
DD+0.5
Tstg
F0530602B
3.3 V Laser Diode Driver
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Electrical Characteristics
Ta=25 °C, VDD-VSS=3.135 ~ 3.465V, unless specified
Parameter Symbol Test Conditions Value Units
Min. Typ. Max.
Supply Current Ickt IMOD, IBIAS are
excluded -3550mA
Input Voltage
(for TD,TDB) VIH Differential Input VDD-1.17
VDD-1.95
VDD-0.8
VDD-1.8
VDD-0.73
VDD-1.45
V
VIL V
V
Input Current
Input Resistance
Input Bias Voltage
IIH VIH=VDD-0.7V -100 - 100 µA
IIL
Ri
VIB
VIL=VDD-1.9V -100
1
-100µA
1.3 - kΩ
Modulation Current
IMMAX VDIS=OPEN
DC, VDD=VSS=GND
35 - - mA
IMMIN VDIS=OPEN - - 5 mA
IMDIS - - 0.5 mA
Bias Current IBMAX VDIS=OPEN 35 - - mA
IBMIN VDIS=OPEN - - 5 mA
IBDIS VDIS=VDD-0.2V
VDIS=VDD-0.2V
--0.5mA
Input Voltage for Disable VDISIH Disable Operation - VDD
VDD-2 V
VDISIL Enable Operation VSS VSS+0.2
OPEN V
Resistance for Bias
Monitor RBM - 10 - Ω
Monitor Voltage of Mark
Ratio VMRK Differential Output - 0.9 - V
Rise time tr - 300 - ps
Fall time tf RL=25Ω, 20%-80%
RL=25Ω, 20%-80%
-300-ps
VDD-VSS=3.3V VDD-1.17 VDD-1.3 VDD-1.43
F0530602B
3.3 V Laser Diode Driver
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Block Diagram
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Die Pad Description
Input Buffer
+
-
Mod.
Circuit
Bias
Circuit
Output Buffer
+
-
Control Circuit
OUT
OUTTB
OUTBIAS
TD
TDb
TDB
TDBb
MRKOUT MRKOUTB
Disable VB
VM
BMP
BMN
Bias Circuit
Bias Circuit
Into Circuit
Vreg
TD
TDB
TDb
TDBb
OUT
OUTB
OUTBIAS
VM
VB
Disable
Vreg
BMP
BMN
MRKOUT
MRKOUTB
Data Input (pos.)
Data Input (neg.)
Input Bias (pos.)
Input Bias (neg.)
Modulation Current Output (pos.)
Modulation Current Output (neg.)
Bias current Output
Modulation Current Control
Bias Current control
Current Shutdown Control
Reference Voltage
Bias Current Monitor (pos.)
Bias Current Monitor (neg.)
Mark ratio Monitor (pos.)
Mark ratio Monitor (neg.)
F0530602B
3.3 V Laser Diode Driver
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Die Pad Assignments
132456789
21 1920 18 17 16 15 14 13
10
11
12
24
23
22
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
No.
15
16
17
18
19
20
21
22
23
24
O
A
Symbol
BMN
BMP
OUTBIAS
OUT
V
SS
mod
OUTB
V
DD
TEMP
V
SS
TEMP
VM
VB
MARKOUTB
MARKOUT
Disable
ALMIN
Symbol
ALMINB
Vreg
V
SS
TD
TD (bias)
TDB
TDB (bias)
TD
V
DD
V
SS
bias
Center Coordinates (µm)
(80,80)
(240,80)
(400,80)
(560,80)
(720,80)
(880,80)
(1040,80)
(1200,80)
(1360,80)
(1360,265)
(1360,445)
(1360,625)
(1360,810)
(1200,810)
Center Coordinates (µm)
(1040,810)
(880,810)
(720,810)
(560,810)
(400,810)
(240,810)
(80,810)
(80,625)
(80,445)
(180,265)
(0,0)
(1440,890)
F0530602B
3.3 V Laser Diode Driver
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Test Circuits
TD VM
VB
TDB
TDBb
TDb
V
SS
V
SS
mod V
SS
bias
OUTB OUTBIASOUT
DUT
DC Source/
Monitor Unit
DC Source/
Monitor Unit
Probing System
F0530602B
3.3 V Laser Diode Driver
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Typical DC Characteristics
(1) Switching Characteristics
(a) Modulation Current Switching
(b) Output Current Switching
VM=-2.2V
VM=-2.3V
VM=-2.4V
VM=-2.5V
VM=-2.6V
VM=-2.7V
VM=-2.8V
-.8000-1.800 VTD .1000/div (v)
.0000
80.00
8.000
/div
IO (mA)
Input Voltage VIN1 (V)
Output Current Iout (mA)
(VSS=-3.3V, TDB=-1.3V, VB=-2.6V)
V
B
=-2.2V
V
B
=-2.3V
V
B
=-2.4V
V
B
=-2.5V
V
B
=-2.6V
V
B
=-2.7V
V
B
=-3.3V
-.8000-1.800 VTD .1000/div (v)
.0000
80.00
8.000
/div
IO (mA)
Input Voltage V
IN1
(V)
Output Current Iout (mA)
(V
SS
=-3.3V, TDB=-1.3V, V
M
=-2.5V)
F0530602B
3.3 V Laser Diode Driver
(2) Modulation Current Control
(3) Bias Current Control
-2.000-3.500 .1500/div (v)
.0000
80.00
8.000
/div
IO (mA)
Control Voltage V
B
(V)
Bias Current I
B
(mA)
(V
SS
=-3.3V, TD, TDB,V
M
: open, OUT : open)
-2.000-3.500 .1500/div (v)
.0000
80.00
8.000
/div
IO (mA)
Control Voltage VM(V)
Modulation Current IM(mA)
(VSS=-3.3V, TD=-1.0V, TDB=-1.6V, OUTBIAS,VB: open)
F0530602B
3.3 V Laser Diode Driver
(4) The Dependence of Modulation Current on the ambient temperature
VM=-2.2V
VM=-2.3V
VM=-2.4V
VM=-2.5V
VM=-2.6V
VM=-2.7V
0
10
20
30
40
50
60
70
80
-40 -20 020406080100
IM (mA)
Ambient Temperature (
°C
)
(VSS=-3.3V, TD=-1.0V, TDB=-1.6V, VB, OUTBIAS: open)
Electron Device Department
