GG? HARRIS August 1991 2N6761 2N6762 N-Channel Enhancement-Mode Power Field-Effect Transistors Features Package TO-2043A * 4.0A and 4.5A, 450V - 500V BOTTOM VIEW * DS(on) = 1.52 and 2.02 i issipati imi SOURCE DRAIN SOA is Power-Dissipation Limited J (FLANGE) * Nanosecond Switching Speeds o Linear Transfer Characteristics Oo A oO * High Input Impedance GATE Majority Carrier Device Description The 2N6761 and 2N6762 are n-channel enhancement-mode | Terminal Diagram silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, N-CHANNEL ENHANCEMENT MODE relay drivers, and drivers for high-power bipolar switching 4 0 transistors requiring high speed and low gate-drive power. These D Ww B types can be operated directly from integrated circuits. s 3 : = These types are supplied in the JEDEC TO-204AA steel package. = a OT G z = a s Absolute Maximum Ratings (Tc = +259C) Unless Otherwise Specified 2N6761 2N6762 UNITS Drain-Source Voltage 0.2.0... ccc c cece eee cece eee te tee eenneeee 450* 00* Vv Drain~Gate Voltage (Rgg = 20k) 450* 500* v Continuous Drain Current To = F25OC cece eee ee ee eee 4.0* 5.5* A To = H1009G 2 cece eens 2.5* 3.0* A Pulsed Drain Current... 0.0.00. ccc ee eee e eens 6.0 7.0 A Gate-Source Voltage 20... 0. cece ccc cece eee eter eneaeenee +20 +20 Vv Maximum Power Dissipation To = +259C (See Figure 11). 00... eee cece cece cnet tect ees 75* 75* Ww To = +1009C (See Figure 11)................ 30% 30 w Linear Derating Factor (See Figure 11) 0.6* 0.6* W/G Inductive Current, Clamped .......... 0.00 cece cece cuc eee eneeeeens 6.0 7.0 A (See Figures 1 and 2, L = 100yH) Operating and Storage Junction Temperature Range............ Ty. TstG -55 to +150* -55 to +150* C Maximum Lead Temperature for Soldering ..............00ceeneeeeeee Th 300* 300* oC (0.063 (1.6mm) fram case for 10s) *JEDEC registered vaiues CAUTION: These devices are sensilive to electrostatic discharge. Proper |.C. handling procedures should be follawed. File Number 1 589.1 Copyright Harris Corporation 1991 4-19 Specifications 2N6761, 2N6762 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min, Typ. Man. Units Test Conditions BVpss Drain Source Breakdown Voltage | 2NG761 | 450 ~ - v Vgg=0 2N6762 | 500 - - Vv | tp =4.0ma Vesitny) Gate Threshold Voltage ALL 20 - 4.0 v Vos Ves. Ip = mA gssr Gate -- Body Leakage Forward ALL ~ = 100 nA | Vgg = 20V essa Gate Body Leakage Reverse ALL ~ - 100 aA | Vg = -20V Ipss Zero Gate Voltage Orain Current L ~ Qt 1.0" | mA | Vog = 0.8 x Max. Rating. Vgs = 0 AL - a2 4.0" MA | Vog = Max. Rating, Vgg = 0. To = 25C to 125C Vosion) Static Drain-Source On-State 2N6761 - - Bot v Vag = 10V. Ip = 4A Voltage @ 2N6762 - - 77 v Ves 2 10V. Ip = 4.54 Rosion) Static Orain-Source Or State 2N6761 - 1S 2.0 2 V6g = 10V. ip = 2.54 Resistance () 2NB762 - 13 15 Rf | Vgg = 10V, Ip = 3.04 R, Static Drain-Source On-State 2N6761 = ~ aar 2 | Vgg= 10V. Ip = 25A, Te = 125C OSLO") Resistance oO $ 2N6762 = - 33 2 | Vag = 10V, tp, = 3.0A, To = 125C 94, Forward Transconductance (1) ALL 25 | 35 7.5" | S (U1 | Vag = 16V. Ip = 3A Cig Input Capacitance ALL aso* | 600 ] aoa | pF Vag = 0. Vpg = 26V, f = 1.0 MHz Coss Output Copacitance ALL 28" 100 [200 [oF i 10 8 Fig. Crs Revarse Transtas Capacitance ALL 5 3 6o* pF $ tad fon) Turn-On Delsy Time ALL - - 30 ns Vop = 228V, Ip = 3A. Z = 152 % Rise Time ALL =~ 30 ns | (See Figs. 13 and 14) Ta oft) Turn-Oft Oslay Time ALL - = 55 nt | (MOSFET switching times are essentially 1 Fall Time ALL _ - 30 as independent of operating tamperaturs.) Thermal Resistance Rene dunction-to-Casa ALL - 1.67" CW Rincg Case-to-Sink ALL = [ 01 CW; Mounting surface flat, smoath, and greased. Ringa Junction-to-Ambiant ALL = | = 30 CW _| Free Air Operation | Body-Drain Diode Ratings and Characteristics Is Continuous Source Current 2N6761 = = 40 a | Modified MOSFET symbo! D (Body Diode} 2N6762 = = 45 showing the integral Ah reverse P-N junction rectifier, (; | i sm Pulsed Source Current 2N6761 = A ! (Body Diode) 2Ne762 | _ 8s Vso Diode Forward Voltage (7) 2N6761 | 0.65 ~ 13 v Te = 269C, Ig = 48, Vag = 0 2N6762 | 07 = 14 Vv | Te = 25C, Ig =4.5A, Vag = 0 ter Reverse Recovery Time ALL - 500 - ms Ty = 150C, tp = Igy, dig /dt = 100 A/us Opp Reverse Recovered Charge ALL = 7.0 = wo | Ty = 180C, Ip = logy, dip /dt = 100 Alus *JEDEC registered vatues. (7) Pulse Test: Pulse Width < 300 usec, Duty Cycle < 2% VARY ty TO OBTAIN REQUIRED PEAK Ih E, = 0.58Vpgg our Vg = 9.158Vpg5 Ves * 20V ty Fig. 1 Clamped Inductive Test Circuit 1g, DRAIN CURRENT [AMPERES) 0 100 200 300 Vp. DRAIN TO-SOUACE VOLTAGE (VOLTS) Fig. 3 Typical Output Characteristics 4-20 Ig. GRAIN CURRENT (AMPERES) Fig. 4 Typical Transfer Characteristics Ty + +125C I Ty = 250 : Ty= -55C 1 2 i 4 6 Vgs. GATE TQ SOURCE VOLTAGE (VOLTS) Fig. 2 Clamped Inductive Waveforms 2N6761, 2N6762 es PULSE Ip. ORAIN CURRENT (AMPERES) to ORASN CURRENT (AMPERES! 1 a 2 4 6 8 10 0 2 4 6 a 10 Vos, ORAIN-TO-SOURCE VOLTAGE {VOLTS} Vins. ORAIN-TO SQUACE VOLTAGE (VOLTS) Fig. 5 Typical Saturation Characteristics Fig. 6 Typical Saturation Characteristics {2N6761) (2N6762) Ip. ORAIN CURRENT (AMPERES) an tu ue Za zo <= ce 2 2 5 a + Ty? 1509C MAX. at, TRANSCONOUCTANCE (SIEMENS) Vpg = 16V SINGLE PULSE [tt +++ an - + + 60.4 PULSE TEST i l i 0 1 2 3 4 5 10 20 50 100 200 500 ip. DRAIN CURRENT :AMPERES) Vys, DAAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 7 Typical Transconductance Vs. Drain Current Fig. 8 Maximum Safe Operating Area 2000 3S 1600 = 4 < a a = z as 4200 ae 3 By 2 => x SZ = ed g 5 z sada = o = a = a 400 s = Coss 0 10 20 30 40 50 Ty, JUNCTION TEMPERATURE (C) Vg. DRAIN.TO SOURCE VOLTAGE iVOLTS) Fig.9- Normalized Typical On-Resistance Vs. Temperature Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 4-21 Pp. POWER DISSIPATION (WATTS) 2N6761, 2N6762 80 nb - \Y f -44 60+ wpa fed 80 F-pe re pe t +..-+ 1 40 . or {of 30 + a 20} - oppo e = 0 20 66 Ost Tc. CASE TEMPERATURE (C} Fig. 11 Power Vs. Temperature Derating Curve Vup = 225 52 PRF = 1 kHe Yo tps Vas To SCoPE Fig. 13 Switching Time Test Circuit 4-22 ~ 1g, SOURCE CURRENT (AMPERES) Is. 2NG762 tg, 2N6762 Ty = 2590 1 Vgp. SOURCE-TO-ORAIN VOLTAGE (VOLTS? Fig. 12 Typical Body-Drain Diode Forward Voltage VGs (ont 90% INPUT, Vj 50% 10% VGs (ott) nf INPUT PULSE INPUT PULSE ~| RISE TIME ~ FALL TIME 4g (on) be 4a {oft} 4] 4 q Ap Vos (off) - 7) on QUTPUT. Vg ew l/r 30% VS {on} |.ton tw off Fig. 14 Switching Time Waveforms