TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com Vishay Semiconductors
Rev. 1.9, 24-Aug-11 1Document Number: 81021
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 875 nm, GaAlAs
DESCRIPTION
The TSHA620. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control and free air data transmission
systems
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSHA6200 40 ± 12 875 600
TSHA6201 50 ± 12 875 600
TSHA6202 60 ± 12 875 600
TSHA6203 65 ± 12 875 600
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHA6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA6201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA6202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA6203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com Vishay Semiconductors
Rev. 1.9, 24-Aug-11 2Document Number: 81021
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 2.5 A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
Tamb - Ambient Temperature (°C)
21143
IF - Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
Temperature coefficient of VFIF = 100 mA TKVF - 1.6 mV/K
Reverse current VR = 5 V IR100 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj20 pF
Temperature coefficient of φeIF = 20 mA TKφe- 0.7 %/K
Angle of half intensity ϕ± 12 deg
Peak wavelength IF = 100 mA λp875 nm
Spectral bandwidth IF = 100 mA Δλ 80 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr600 ns
IF = 1 A tr300 ns
Fall time IF = 100 mA tf600 ns
IF = 1 A tf300 ns
Virtual source diameter d 3.7 mm
TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com Vishay Semiconductors
Rev. 1.9, 24-Aug-11 3Document Number: 81021
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A, tp = 100 μs
TSHA6200 VF2.8 3.5 V
TSHA6201 VF2.8 3.5 V
TSHA6202 VF2.8 3.5 V
TSHA6203 VF2.8 3.5 V
Radiant intensity
IF = 100 mA, tp = 20 ms
TSHA6200 Ie25 40 125 mW/sr
TSHA6201 Ie30 50 125 mW/sr
TSHA6202 Ie36 60 125 mW/sr
TSHA6203 Ie50 65 125 mW/sr
IF = 1 A, tp = 100 μs
TSHA6200 Ie200 330 mW/sr
TSHA6201 Ie260 400 mW/sr
TSHA6202 Ie330 460 mW/sr
TSHA6203 Ie400 530 mW/sr
Radiant power IF = 100 mA, tp = 20 ms
TSHA6200 φe22 mW
TSHA6201 φe23 mW
TSHA6202 φe24 mW
TSHA6203 φe25 mW
t
p
- Pulse Duration (ms)
94 8003
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
tp/T=0.01
I
FSM
= 2.5 A (single pause)
0.05
0.1
0.2
0.5
I - Forward Current (A)
F
VF- Forward Voltage (V)
94 8005
101
102
103
104
tp = 100 µs
tp/T= 0.001
43210
I - Forward Current (mA)
F
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF- Forward Current (mA)
94 8745
103
101102104
100
1
10
100
1000
I - Radiant Intensity (mw/sr)
e
TSHA 6200
TSHA 6201
TSHA 6202
TSHA 6203
TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com Vishay Semiconductors
Rev. 1.9, 24-Aug-11 4Document Number: 81021
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 8007
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 500 100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
140
94 8020
IF= 20 mA
Φ
Tamb - Ambient Temperature (°C)
780 880
λ- Wavelenght (nm)
980
94 8000
- Relative Radiant Power
e
0
0.25
0.5
0.75
1.0
1.25
I
F
= 100 mA
pe
Φ
ee )/
λ
()
λ
() rel =
λΦΦ (
Φ
0.4 0.2 0
I
e rel
- Relative Radiant Intensity
94 8008
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com Vishay Semiconductors
Rev. 1.9, 24-Aug-11 5Document Number: 81021
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Ø 5.8 ± 0.15
1 min.
7.7 ± 0.15
(5.1)
8.7 ± 0.3
35.9 ± 0.55
0.6 + 0.2
- 0.1
< 0.7
AC
R2.49 (sphere)
Area not plane
Ø 5 ± 0.15
2.54 nom.
0.5 + 0.15
- 0.05
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5259.04-4
Issue: 8; 19.05.09
96 12125
0.5 + 0.15
- 0.05
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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