SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max () Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N 10 1.5 70 @ VGS = 5 V 0.5 2 SD5400CY 20 1.5 75 @ VGS = 5 V 0.5 2 SD5401CY 10 1.5 75 @ VGS = 5 V 0.5 2 Features Benefits Applications High-Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Quad SPST Switch with Zener Input Protection Low Interelectrode Capacitance and Leakage Ultra-High Speed Switching--tON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching Video Switch Multiplexer DAC Deglitchers High-Speed Driver Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built on Siliconix' proprietary DMOS process, the SD5000/5400 series utilizes lateral construction to achieve low capacitance and ultra-fast switching speeds. For manufacturing reliability, these devices feature poly-silicon gates protected by Zener diodes. The SD5000/5400 are rated to handle 10-V analog signals, while the SD5001/5401 are rated for 5-V signals. For similar products packaged in TO-206AF (TO-72) and TO-253 (SOT-143) see the SD211DE/SST211 series. Dual-In-Line Narrow Body SOIC D1 1 16 D4 S2 1 14 S1 SUBSTRATE 2 15 NC SUBSTRATE 2 13 NC G1 3 14 G4 G2 3 12 G1 13 S4 D2 4 11 D1 D3 5 10 D4 G3 6 9 G4 S3 7 8 S4 S1 4 S2 5 12 S3 G2 6 11 G3 NC 7 10 NC D2 8 9 D3 Plastic: SD5000N SD5001N Sidebraze: SD5000I Top View SD5400CY SD5401CY Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70296. Applications information may also be obtained via FaxBack, request document #70607. Siliconix S-51850--Rev. G, 14-Apr-97 1 SD5000/5400 Series Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage (SD5000, SD5400) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30 V/-25 V (SD5001, SD5401) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25 V/-15 V Gate-Substrate Voltage (SD5000, SD5400) . . . . . . +30 V/-0.3 V (SD5001, SD5401) . . . . . . +25 V/-0.3 V Drain-Source Voltage (SD5000, SD5400) . . . . . . . . . . . . . 20 V (SD5001, SD5401) . . . . . . . . . . . . . 10 V Drain-Source-Substrate Voltage Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C " ! Notes: a. SD5000/SD5001 derate 5 mW/_C above 25_C b. SD5400/SD5401 derate 4 mW/_C above 25_C (SD5000, SD5400) . . . . . 25 V (SD5001, SD5401) . . . . . 15 V Static Drain-Source Breakdown Voltage V(BR)DS VGS = VBS = -5 V, ID = 10 nA 30 20 10 Source-Drain Breakdown Voltage V(BR)SD VGD = VBD = -5 V, IS = 10 nA 22 20 10 Drain-Substrate Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA, Source Open 35 25 15 Source-Substrate Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA, Drain Open 35 25 15 VDS = 10 V 0.4 VDS = 15 V 0.7 VDS = 20 V 0.9 VSD = 10 V 0.5 VSD = 15 V 0.8 VSD = 20 V 1 Drain-Source Leakage Source-Drain Leakage Gate Leakage Threshold Voltage Drain-Source Drain Source On On-Resistance Resistance Resistance Match IDS(off) ISD(off) VGS = VBS = -5 V VGD = VBD = -5 V IGBS VDB = VSB = 0 V, VGB = 30V 0.01 VGS(th) VDS = VGS , ID = 1 mA, VSB = 0 V 0.8 rDS(on) VSB = 0 V ID = V 10 10 10 10 100 0.1 1.5 100 0.1 1.5 SD5000 Series VGS = 5 V 58 70 70 SD5400 Series VGS = 5 V 60 75 75 VGS = 10 V 38 VGS = 15 V 30 VGS = 20 V 26 VGS = 5 V 1 SD5000 Series 12 10 10 SD5400 Series 11 9 9 DrDS(on) nA V W 5 5 Dynamic Forward Transconductance gfs f Gate Node Capacitance C(GS+GD+GB) Drain Node Capacitance C(GD+DB) Source Node Capacitance C(GS+SB) Reverse Transfer Capacitance Crosstalk 2 VDS = 10 V VSB = 0 V ID = 20 mA f = 1 kHz VDS = 10 V f = 1 MHz VGS = VBS = -15 V mS SD5000 Series Crss f= 3 kHz 2.5 3.5 3.5 2.0 3 3 3.7 5 5 0.2 0.5 0.5 -107 pF dB Siliconix S-51850--Rev. G, 14-Apr-97 SD5000/5400 Series Switching td(on) Turn On Time Turn-On tr VSSB = 5 V, VIN N 0 to 5 V, RG = 25 VDD = 5 V, RL = 680 td(off) Turn Off Time Turn-Off 0.5 1 1 0.6 1 1 ns 2 tf 6 Notes: a. TA = 25_C unless otherwise noted. b. B is is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. DMCA Typical Characteristics Leakage Current vs. Applied Voltage On-Resistance vs. Gate-Source Voltage ID (off) @ VGS = VBG = -5 V IS(off) @ VGD = VBD = -5V ISBO @ VGB = 0 V, Drain Open 300 1 nA VGS = 4 V 240 Leakage rDS(on) - Drain-Source On-Resistance ( 10 nA 180 120 ID(off) IS(off) 100 pA ISBO 5V 10 pA 60 10 V IGSS (Diode) 1 pA 0 0 4 8 12 16 0 20 4 8 On-Resistance vs. Temperature 20 100 ID = 5 mA, VBS = 0 V g fs - Forward Transconductance (mS) rDS(on) - Drain-Source On-Resistance ( 16 20 Applied Voltage (V) VSB - Source-Substrate Breakdown Voltage (V) 80 VGS = 5 V 60 12 10 V 15 V 40 20 V 20 0 Common-Source Forward Transconductance vs. Drain Current VDS = 15 V VBS = 0 V 16 TA = 55_C 12 25_C 8 125_C 4 0 -60 -20 20 60 TA - Temperature (_C) Siliconix S-51850--Rev. G, 14-Apr-97 100 140 1 10 100 ID - Drain Current (mA) 3 SD5000/5400 Series Typical Characteristics (Cont'd) Leakage Current vs. Temperature 100 ID(off) @ VGS = VBS = -5 V, VDS = 10 V IS(off) @ VGD = VBD = -5 V, VSD = 10 V IGSS @ VGS = 10 V ISBO @ VSB = 10 V Drain Open IS(off) VGS = VDS = VTH ID = 1 mA TA = 25_C 4 3 Leakage (nA) V GS(th) - Gate-Source Threshold Voltage (V) Threshold Voltage vs. Substrate-Source Voltage 5 H 2 ID(off) 10 L ISBO IGSS (Diode) 1 0 1 0 -4 -8 -12 -16 -20 25 50 VBS - Body-Source Voltage (V) 100 mA VDS = 10 V, f = 1 MHz VGS = VBS 125 Body Leakage Current vs. Drain-Body Voltage 10 mA 8 ID = 13 mA 1 mA I B - Body Leakage Capacitance (pF) 100 TA - Temperature (5_C) Capacitance vs. Gate-Source Voltage 10 75 6 C(GS+SB) 4 C(GS+GD+GB) 2 4 8 12 16 1 nA 1 mA 10 pA C(DG) 0 10 nA 100 pA C(GD+DB) 0 100 nA 1 pA 0 20 4 8 12 16 20 VBS - Body-Source Voltage (V) VGS - Gate-Source Voltage (V) Input Admittance Forward Admittance 100 100 VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C gfs 10 (mS) (mS) 10 bis 1 1 -bfs gis 0.1 0.1 100 200 500 f - Frequency (MHz) 4 1000 100 200 500 1000 f - Frequency (MHz) Siliconix S-51850--Rev. G, 14-Apr-97 SD5000/5400 Series Typical Characteristics (Cont'd) Reverse Admittance Output Admittance 1 100 VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C brs 0.1 (mS) (mS) 10 +grg bog -grg 0.01 1 gog 0.001 0.1 100 200 1000 500 200 100 f - Frequency (MHz) f - Frequency (MHz) Switching Characteristics 700 1000 500 Output Characteristics 50 VBS = 0 V TA = 25_C 600 I D - Drain Current (mA) 40 R L ( 500 400 300 200 VGS = 5 V 30 4V 20 3V 10 100 2V 0 0 0 1 2 3 4 5 6 0 7 tf - Fall Time (ns) V GS(th) - Gate-Source Threshold Voltage (V) 5 g os - Output Conductance (mS) VBS = 0 V f = 1 kHz 0.8 VDS = 5 V 0.6 10 V 0.4 15 V 0.2 0 0 4 8 12 ID - Drain Current (mA) Siliconix S-51850--Rev. G, 14-Apr-97 8 12 16 20 VDS - Drain-Source Voltage (V) Output Conductance vs. Drain Current 1.0 4 16 20 Threshold Voltage vs. Temperature VGS = VDS = VTH ID = 1 mA 4 3 VBS = -10 V -5 V 2 -1 V -0.5 V 1 0V 0 -60 -20 20 60 100 140 TA - Temperature (_C) 5 SD5000/5400 Series Switching Time Test Circuit To Scope +VDD +5 V 510 RL VIN VOUT To Scope Sampling Scope 51 6 0V Input pulse: td, tr < 1 ns Pulse width: 100 ns +VDD Rep rate: 1 MHz VIN tr < 360 ps RIN = 1 M CIN = 2 pF BW = 500 MHz 50% td(on) td(off) 90% VOUT 50% 10% 0V tr tf Siliconix S-51850--Rev. G, 14-Apr-97