FP481P03078MS(H) 78W RF GaN Power Transistor Features *1.03 to 1.09 GHz Operation *19 dB Small Signal Gain at 1.03 GHz *TBC W Typical Psat *TBC % Efficiency at Psat *48 V Operation Applications *Broadband Amplifiers *Cellular Infrastructure *Test Instrumentation *Radar application Absolute Maximum Ratings Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 160 Volts 25C Gate-to-Source Voltage3 VGS -10, +2 Volts 25C Storage Temperature3 T STG -65, +150 C Operating Junction Temperature1,3 TJ 225 C Maximum Forward Gate Current3 IGMAX 30 mA 25C Maximum Drain Current2 IDMAX 1 A Id@ Vd =10V, Vg= 1V Soldering Temperature3 TS 245 C Storage Temperature3 T STG -65, +150 C Note: Continuous use at maximum temperature will affect MTTF. Current limit for long term, reliable operation After additional updates All Rights Reserved, Copright(c) FERARF Ltd. www.ferarf.com 1 Disclaimer: Subject to change without notice Rev.2.0 Jan./2018 2018.05.24-16:49 DC Characteristics1 (TC = 25C ) Symbol Parameter TYP MIN Units Conditions MAX Gate Threshold Voltage VGS(th) -3.1 VDC VDS = 10 V, ID = 1 mA Gate Quiescent Voltage V GS(Q) -2.8 VDC VDS = 48 V, ID = 150 mA Saturated Drain Current2 IDS 1000 mA/mm VDS = 10 V, VGS = 1 V Drain-Source Breakdown Voltage VBR VDC ID = 1 mA/mm 160 Note: 1.Measured on wafer prior to packaging. 2.Scaled from PCM data. RF Characteristics (TC = 25C, F0 1.03GHz unless otherwise noted) Parameter Symbol MIN TYP MAX Units Conditions GSS 19 dB VDD = 48 V, IDQ = 150 mA, Pulse Width = 100 usec, Duty Cycle = 10% Saturated Output Power P SAT TBC W VDD = 48 V, IDQ = 150 mA, Pulse Width = 100 usec, Duty Cycle = 10% Pulsed Drain Efficiency1 n TBC % VDD = 48 V, IDQ = 150 mA, Pulse Width = 100 usec, Duty Cycle = 10% Gain Note: 1. Drain Efficiency = POUT / PDC All Rights Reserved, Copright(c) FERARF Ltd. Disclaimer: Subject to change without notice Rev.2.0 Jan./2018 2 www.ferarf.com Pulse Signal Performance (Tc=25, Measured in the test board amplifier circuit) VDD = 48 V, IDQ = 150 mA All Rights Reserved, Copright(c) FERARF Ltd. Disclaimer: Subject to change without notice Rev.2.0 Jan./2018 3 www.ferarf.com Demonstration board Reference Value C1 3.3pF C2,C5 Package Manufacturer High Q Capacitor CHA TEMEX 47pF High Q Capacitor CHA TEMEX C3 6.2pF High Q Capacitor CHA TEMEX C4 2.7pF High Q Capacitor CHA TEMEX C6 100pF Ceramic Capacitor 2010 Murata C7 1000pF Ceramic Capacitor 2010 Murata C8 1uF Ceramic Capacitor 2010 Murata C9 10uF Tantalium Capacitor C10 33pF High Q Capacitor CHA TEMEX C11 1.2pF High Q Capacitor CHA TEMEX C13 100pF High V Capacitor 2010 Murata C12 33pF High V Capacitor 2010 Murata C14 470nF High V Capacitor 3528 Johanson Dielectrics C15 47uF Tantalium Capacitor L1 47nH Wire Wounded Inductor 2010 AVX L2 28nH Air Core Inductor B08T Coilcraft R1 300 Chip Resistor 2010 Walsin R2 20 Chip Resistor 2010 Walsin All Rights Reserved, Copright(c) FERARF Ltd. Disclaimer: Subject to change without notice Rev.2.0 Jan./2018 Description 4 www.ferarf.com Partnumbercode F P 48 1P03 078 M H S (Surface), H (Screw Hole) M (Matched), U (Unmatched) Power (Watt) Frequency (GHz) Drain Voltage (DC) All Rights Reserved, Copright(c) FERARF Ltd. Disclaimer: Subject to change without notice Rev.2.0 Jan./2018 5 www.ferarf.com Disclaimer Information furnished by FeraRF Ltd. is believed to be accurate and reliable. However, no responsibility is assumed by FeraRF Ltd. for its use, nor for any infringements of patents or other rights of third parties that may result from its use. The information contained is provided "as it is" and with all defects, and the whole risk associated with such information is entirely with the user. Specifications subject to change without notice. FeraRF Ltd. and registered trademarks are the property of their respective owners. Customers must search and verify the updated information before placing orders for our products. We makes no guarantee or representation regarding the information contained herein the useing of products for any specific purpose. FeraRF Ltd. products are not warranted or authorized for use as key components in conditions, or other applications where a failure would be expected to cause severe personal injury or death. If you have question, please leave detailed message below. We will respond to your inquiry soon after a careful review * Website : http://ferarf.com/contact/ * E-mail : ferax@ferarf.com All Rights Reserved, Copright(c) FERARF Ltd. Disclaimer: Subject to change without notice Rev.2.0 Jan./2018 6 www.ferarf.com