•1.03 to 1.09 GHz Operation
•19 dB Small Signal Gain at 1.03 GHz
•TBC W Typical Psat
•TBC % Efficiency at Psat
•48 V Operation
www.ferarf.com
Applications
Features
78W RF GaN Power Transistor
FP481P03078MS(H)
•Broadband Amplifiers
•Cellular Infrastructure
•Test Instrumentation
•Radar application
1
All Rights Reserved, Copright©FERARF Ltd.
Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
Absolute Maximum Ratings
Note:
Continuous use at maximum temperature will affect MTTF.
Current limit for long term, reliable operation
After additional updates
Parameter
Drain-Source Voltage
Symbol
VDSS
Rating
160
Units
Volts
Conditions
2 5 ˚ C
Gate-to-Source Voltage3VGS -10, +2 Volts 2 5 ˚ C
Storage Temperature3TSTG -65, +150 ˚C
Operating Junction Temperature1,3 TJ225 ˚C
Maximum Forward Gate Current3IGMAX 30 mA 2 5 ˚C
Maximum Drain Current2IDMAX 1 A
Id@
Vd =10V, Vg=
1V
Soldering Temperature3TS245 ˚C
Storage Temperature3TSTG -65, +150 ˚C
2018.05.24-16:49
DC Characteristics1 (TC = 25˚C )
RF Characteristics
(TC = 25˚C, F0 1.03GHz unless otherwise noted)
2
Note:
1.Measured on wafer prior to packaging.
2.Scaled from PCM data.
www.ferarf.com
All Rights Reserved, Copright©FERARF Ltd.
Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
MIN
TYP
-3.1
MAX
Units
VDC
Conditions
VDS = 10 V, ID = 1 mA
Gate Quiescent Voltage VGS(Q) -2.8VDC VDS = 48 V, ID = 150 mA
Saturated Drain Current2IDS 1000 mA/mm VDS = 10 V, VGS = 1 V
Drain-Source Breakdown Voltage VBR 160 VDC ID = 1 mA/mm
Parameter
Gain
Symbol
GSS
MIN TYP
19
MAX Units
dB
Conditions
VDD = 48 V, IDQ = 150 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Saturated
Output
Power
PSAT TBC WVDD = 48 V, IDQ = 150 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Pulsed
Drain Efficiency
1
nTBC %VDD = 48 V, IDQ = 150 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Note:
1. Drain Efficiency = POUT / PDC
(Tc=25℃, Measured in the test board amplifier circuit)
VDD = 48 V, IDQ = 150 mA
3
Pulse Signal Performance
www.ferarf.com
All Rights Reserved, Copright©FERARF Ltd.
Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
4
Demonstration board
www.ferarf.com
All Rights Reserved, Copright©FERARF Ltd.
Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
Reference Value Description Package Manufacturer
C1 3.3pF High Q Capacitor CHA TEMEX
C2,C5 47pF High Q Capacitor CHA TEMEX
C3 6.2pF High Q Capacitor CHA TEMEX
C4 2.7pF High Q Capacitor CHA TEMEX
C6 100pF Ceramic Capacitor 2010 Murata
C7 1000pF Ceramic Capacitor 2010 Murata
C8 1uF Ceramic Capacitor 2010 Murata
C9 10uF Tantalium Capacitor
C10 33pF High Q Capacitor CHA TEMEX
C11 1.2pF High Q Capacitor CHA TEMEX
C13 100pF High V Capacitor 2010 Murata
C12 33pF High V Capacitor 2010 Murata
C14 470nF High V Capacitor 3528 Johanson Dielectrics
C15 47uF Tantalium Capacitor
L1 47nH Wire Wounded Inductor 2010 AVX
L2 28nH Air Core Inductor B08T Coilcraft
R1 300Ω Chip Resistor 2010 Walsin
R2 20Ω Chip Resistor 2010 Walsin
5www.ferarf.com
All Rights Reserved, Copright©FERARF Ltd.
Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
Partnumbercode
FP 48 1P03 078 M H
S (Surface), H (Screw Hole)
M (Matched), U (Unmatched)
Power (Watt)
Frequency (GHz)
Drain Voltage (DC)
Information furnished by FeraRF Ltd. is believed to be accurate and reliable. However, no
responsibility is assumed by FeraRF Ltd. for its use, nor for any infringements of patents
or other rights of third parties that may result from its use. The information contained is
provided “as it is" and with all defects, and the whole risk associated with such
information is entirely with the user. Specifications subject to change without notice.
FeraRF Ltd. and registered trademarks are the property of their respective owners.
Customers must search and verify the updated information before placing orders for our
products. We makes no guarantee or representation regarding the information
contained herein the useing of products for any specific purpose. FeraRF Ltd. products
are not warranted or authorized for use as key components in conditions, or other
applications where a failure would be expected to cause severe personal injury or death.
6
Disclaimer
www.ferarf.com
All Rights Reserved, Copright©FERARF Ltd.
Disclaimer: Subject to change without notice
Rev.2.0 Jan./2018
If you have question, please leave detailed message below.
We will respond to your inquiry soon after a careful review
• Website : http://ferarf.com/contact/
• E-mail : ferax@ferarf.com
