DF45112 - Dynex Semiconductor

DF451

1/8

FEATURES

■Double Side Cooling

■High Surge Capability

■Low Recovery Charge

Applications

■Induction Heating

■A.C. Motor Drives

■Inverters And Choppers

■Welding

■High Frequency Rectification

■UPS

Voltage Ratings

KEY PARAMETERS

VRRM 1600V

IF(AV) 295A

IFSM 3500A

Qr25µC

trr 1.22µs

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

IF(AV) Mean forward current

IF(RMS) RMS value

IFContinuous (direct) forward current

Single Side Cooled (Anode side)

IF(AV) Mean forward current

IF(RMS) RMS value

IFContinuous (direct) forward current

UnitsMax.

Half wave resistive load, Tcase = 65oC 295 A

Tcase = 65oC 543 A

Tcase = 65oC 391 A

Half wave resistive load, Tcase = 65oC 220 A

Tcase = 65oC 348 A

Tcase = 65oC 285 A

1600

1400

1200

1000

800

600

DF451 16

DF451 14

DF451 12

DF451 10

DF451 08

DF451 06

Conditions

VRSM = VRRM + 100V

Type Number Repetitive Peak

Reverse Voltage

VRRM

Outline type code: M771.

See Package Details for further information.

DF451

Fast Recovery Diode

Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000

DF451

2/8

SURGE RATINGS

Conditions Max. Units

3.5 kA

61.25 x 10

A2sI2t for fusingI2t

Surge (non-repetitive) forward currentIFSM

ParameterSymbol

10ms half sine; with 0% VRRM, Tj = 150oC

2.8 kA

39.2 x 103A2sI2t for fusingI2t

Surge (non-repetitive) forward currentIFSM 10ms half sine; with 50% VRRM, Tj = 150oC

THERMAL AND MECHANICAL DATA

Conditions Max. Units

oC/W- 0.133

Anode dc

Clamping force 5.0kN

with mounting compound

Thermal resistance - case to heatsink

Rth(c-h)

0.02

Double side -

Single side

Thermal resistance - junction to case

Rth(j-c) Single side cooled

Symbol Parameter

- 0.02 oC/W

oC/W

Cathode dc - 0.147 oC/W

Double side cooled - 0.07 oC/W

Tstg Storage temperature range –55 150 oC

5.54.5Clamping force-

Tvj Virtual junction temperature Forward (conducting) - 150 oC

trr

100

Symbol Typ. Units

Parameter

VFM Forward voltage

IRRM Peak reverse current

Reverse recovery time

QRA1 Recovered charge (50% chord)

IRM Reverse recovery current

KSoft factor

VTO Threshold voltage

rTSlope resistance

VFRM Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC-40V

At Tvj = 125oC - 1.5 mΩ

At Tvj = 125oC - 1.6 V

1.7 - -

-40A

-25µC

1.22 -µs

At VRRM, Tcase = 125oC-mA

At 600A peak, Tcase = 25oC - 2.65 V

Conditions Max.

IF = 500A, diRR/dt = -80A/µs

Tcase = 125oC, VR = 100V

CHARACTERISTICS

DF451

3/8

CURVES

Fig.1 Maximum (limit) forward characteristics

500

1000

1500

2000

2500

3000

Instantaneous forward current, I

- (A)

2.0 3.0 4.0 5.0 6.0

Instantaneous forward voltage, V

- (V)

Measured under pulse conditions

= 150˚C

= 25˚C

DEFINITION OF K FACTOR AND QRA1

0.5x I

/dt t

RA1

= 0.5x I

+ t

)

k = t

DF451

4/8

Fig.2 Maximum (limit) forward characteristics

100

200

300

400

500

Instantaneous forward current, I

- (A)

1.25 1.5 1.75 2.0 2.25

Instantaneous forward voltage, V

- (V)

Measured under pulse conditions

= 150˚C

= 25˚C

DF451

5/8

Fig.3 Recovered charge

Fig.4 Typical reverse recovery current vs rate of rise of forward current

1 10 100 1000

Rate of rise of reverse current, dIR/dt - (A/µs)

100

1000

Reverse recovered charge QS - (µC)

IRR

tp = 1ms

dIR/dt

QS = ∫Conditions:

Tj = 125˚C,

VR = 100V

50µs

IF = 2000A

IF = 1000A

IF = 500A

IF = 200A

IF = 100A

1 10 100 1000

Rate of rise of reverse current, dI

/dt - (A/µs)

100

1000

Reverse recovery current, I

- (A)

Conditions:

= 125˚C,

= 100V

= 2000A

= 1000A

= 500A

IF = 100A

DF451

6/8

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

15.0

14.0

2 holes Ø3.6 x 2.0 deep

(One in each electrode)

Anode

Cathode

Ø19 nom

Ø42 max

Ø19 nom

Nominal weight: 50g

Clamping force: 5kN ±10%

Package outine type code: M771

Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

1001010.10.01 Time - (s)

0.1

0.01

0.001

Thermal impedance - (˚C/W)

d.c. Double side cooled

DF451

7/8

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506

Recommendations for clamping power semiconductors AN4839

Thyristor and diode measurement with a multi-meter AN4853

Use of VTO, rT on-state characteristic AN5001

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-

tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and

current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The

Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of

our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete

solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-

loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.

Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the

performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on

request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the

factory.

DF451

8/8

CUSTOMER SERVICE CENTRES

France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50

North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444

UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

SALES OFFICES

France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50

Germany Tel: 07351 827723

North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.

UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.

TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: 00-44-(0)1522-500500

Fax: 00-44-(0)1522-500550

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,

Nepean, Ontario, Canada K2E 7W6.

Tel: 613.723.7035

Fax: 613.723.1518

Toll Free: 1.888.33.DYNEX (39639)

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as

a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves

the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such

methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication

or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

No Annotation: The product parameters are fixed and the product is available to datasheet specification.