CTD500, CDT500 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type CTD/CDT500GK08 CTD/CDT500GK12 CTD/CDT500GK14 CTD/CDT500GK16 CTD/CDT500GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine Maximum Ratings Unit 785 500 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 15000 16000 13000 14400 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1125000 1062000 845000 813000 A2s TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=1A diG/dt=1A/us repetitive, IT=960A 100 non repetitive, IT=ITAVM 500 i dt (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us TVJ=TVJM IT=ITAVM 120 60 W PGAV 20 W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 (dv/dt)cr PGM VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA tp=30us tp=500us t=1min t=1s Mounting torque (M6) Terminal connection torque (M8) Typical including screws o C 3000 3600 V~ 4.5-7/40-60 11-13/97-115 Nm/lb.in. 940 g DEECorp. http://store.iiic.cc/ CTD500, CDT500 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol IRRM Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 40 mA VT IT=1200A; TVJ=25 C 1.3 V VTO For power-loss calculations only (TVJ=TVJM) 0.8 V 0.38 rT o m VD=6V; TVJ=25 C TVJ=-40oC 2 3 V VD=6V; TVJ=25oC TVJ=-40oC 300 400 mA VGD TVJ=TVJM; VD=2/3VDRM 0.25 V IGD TVJ=TVJM; VD=2/3VDRM 10 mA VGT IGT o IL TVJ=25 C; tp=30us; VD=6V IG=1A; diG/dt=1A/us 400 mA IH TVJ=25oC; VD=6V; RGK= 300 mA 2 us 350 us o tgd TVJ=25 C; VD=1/2VDRM IG=1A; diG/dt=1A/us tq TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM typ. RthJC DC current 0.072 K/W RthJK DC current 0.096 K/W dS Creeping distance on surface 12.7 mm dA Creepage distance in air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Direct copper bonded Al2O3-ceramic with copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL applied * Keyed gate/cathode twin pins * Motor control, softstarter * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Solid state switches * Simple mounting * Improved temperature and power cycling * Reduced protection circuits DEECorp. http://store.iiic.cc/ CTD500, CDT500 Thyristor-Diode Modules, Diode-Thyristor Modules 107 14000 1000 VR = 0V 2 ITSM It ITAVM 12000 A 50 Hz 80 % VRRM TVJ = 45C TVJ = 140C 10000 A 900 DC 180 sin 120 60 30 800 A2s 700 600 8000 6 10 500 6000 400 TVJ = 45C 300 TVJ = 140C 4000 200 2000 100 105 0 0.001 0.01 s 0.1 1 0 1 1 ms 0 0 25 50 75 100 t t Fig. 2 i2dt versus time (1-10 ms) Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 125 C 150 TC Fig. 3 Maximum forward current at case temperature 10 1: IGT, TVJ = 140C 1200 Ptot V RthKA K/W W 0.03 0.07 0.12 0.2 0.3 0.4 0.6 1000 800 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C VG 3 2 6 5 1 4 1 600 DC 180 sin 120 60 30 400 200 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 140C 0 0 200 400 600 800 A 0 25 50 75 100 ITAVM / IFAVM 125 C TA 150 0.1 10-3 10-2 10-1 100 101 A IG 102 Fig. 5 Gate trigger characteristics Fig. 4 Power dissipation versus on-state current and ambient temperature 100 TVJ = 25 C 5000 W 4500 RthKA K/W s 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4000 Ptot 3500 3000 2500 tgd typ. Limit 10 2000 1500 Circuit B6 1000 3 x CTD/CDT500 500 1 0 0 300 600 900 1200 1500 A 0 25 50 75 100 C 125 150 TA IdAVM Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.01 0.1 A 1 10 IG Fig. 7 Gate trigger delay time DEECorp. http://store.iiic.cc/ CTD500, CDT500 Thyristor-Diode Modules, Diode-Thyristor Modules 5000 W 4500 Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature RthKA K/W 0.01 0.02 0.03 0.045 0.06 0.08 0.12 Ptot 4000 3500 3000 2500 2000 Circuit W3 1500 3 x CTD/CDT500 1000 500 0 0 300 600 900 1200 A 0 25 50 75 100 125 C 150 TA IRMS 0.12 Fig. 9 Transient thermal impedance junction to case (per thyristor) K/W 0.10 RthJC for various conduction angles d: ZthJC d 0.08 DC 180oC 120oC 60oC 30oC 0.06 30 60 120 180 DC 0.04 0.072 0.0768 0.081 0.092 0.111 Constants for ZthJC calculation: 0.02 i 0.00 10-3 RthJC (K/W) 10-2 10-1 100 101 s 102 t 1 2 3 4 Rthi (K/W) ti (s) 0.0035 0.0186 0.0432 0.0067 0.0054 0.098 0.54 12 Fig.10 Transient thermal impedance junction to heatsink (per thyristor) 0.14 K/W 0.12 ZthJK RthJK for various conduction angles d: 0.10 d DC 180oC 120oC 60oC 30oC 0.08 0.06 30 60 120 180 DC 0.04 0.02 10-2 10-1 100 0.096 0.1 0.105 0.116 0.135 Constants for ZthJK calculation: i 0.00 10-3 RthJK (K/W) s 101 t 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0035 0.0186 0.0432 0.0067 0.024 0.0054 0.098 0.54 12 12 DEECorp. http://store.iiic.cc/