CTD500, CDT500
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
CTD/CDT500GK08
CTD/CDT500GK12
CTD/CDT500GK14
CTD/CDT500GK16
CTD/CDT500GK18
VRRM
VDRM
V
800
1200
1400
1600
1800
VRSM
VDSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
TVJ=TVJM
TC=85oC; 180o sine 785
500 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
15000
16000
13000
14400
A
ITSM, IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
1125000
1062000
845000
813000
A2s
i2dt
(di/dt)cr
100
500 A/us
(dv/dt)cr TVJ=TVJM; VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise) 1000 V/us
PGM TVJ=TVJM tp=30us
IT=ITAVM tp=500us 120
60 W
PGAV 20 W
ITRMS, IFRMS
ITAVM, IFAVM
oC
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s 3000
3600 V~
MdMounting torque (M6)
Terminal connection torque (M8)
_
4.5-7/40-60
11-13/97-115 Nm/lb.in.
Weight 940 g
TVJ=TVJM repetitive, IT=960A
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A non repetitive, IT=ITAVM
diG/dt=1A/us
VRGM 10 V
Typical including screws
DEECorp.
http://store.iiic.cc/
CTD500, CDT500
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol Test Conditions Characteristic Values Unit
V
VTIT=1200A; TVJ=25oC 1.3
VTO For power-loss calculations only (TVJ=TVJM) 0.8 V
rT0.38 m
VD=6V; TVJ=25oC
TVJ=-40oC
VGT 2
3V
VD=6V; TVJ=25oC
TVJ=-40oC
IGT 300
400 mA
VGD TVJ=TVJM; VD=2/3VDRM 0.25 V
IGD 10 mA
IHTVJ=25oC; VD=6V; RGK= 300 mA
TVJ=25oC; tp=30us; VD=6V
IG=1A; diG/dt=1A/us 400 mAIL
dSCreeping distance on surface 12.7 mm
dACreepage distance in air 9.6 mm
aMaximum allowable acceleration 50 m/s2
IRRM TVJ=TVJM; VR=VRRM 40 mA
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
tgd 2us
TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us typ.
VR=100V; dv/dt=50V/us; VD=2/3VDRM
tq350 us
K/W
RthJC DC current 0.072
RthJK 0.096 K/W
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
with copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL applied
* Keyed gate/cathode twin pins
ADVANTAGES
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Motor control, softstarter
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Solid state switches
TVJ=TVJM; VD=2/3VDRM
DC current
DEECorp.
http://store.iiic.cc/
CTD500, CDT500
Thyristor-Diode Modules, Diode-Thyristor Modules
0 300 600 900 1200 1500
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
12000
14000
0 200 400 600 800
0
200
400
600
800
1000
1200
0 25 50 75 100 125 150
110
105
106
107
0 25 50 75 100 125 150
I2t
ITAVM / IFAVM
IdAVM
A
TA
TC
stms
t
A2s
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
900
1000
°C
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 140°C
TVJ = 140°C
TVJ = 45°C
ITAVM
W
Ptot
A°C
RthKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
°C
3 x CTD/CDT500
Circuit
B6
TA
RthKA K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
ITSM AA
0.01
0.02
0.03
0.045
0.06
0.08
0.12
Ptot
W
Fig.
Fig. 4 Power dissipation versus on-state current and ambient temperature
1 Surge overload current
ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
10-3 10-2 10-1 100101102
0.1
1
10
IG
VG
A
1: IGT, TVJ = 140°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, T VJ = 140°C
4
2
156
3
Fig. 5 Gate trigger characteristics
0.01 0.1 1 10
1
10
100
A
IG
s
tgd
Limit
typ.
TVJ = 2 5°C
Fig. 7 Gate trigger delay time
DEECorp.
http://store.iiic.cc/
CTD500, CDT500
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig.10Transient thermal impedance
junction to heatsink (per thyristor)
0 300 600 900 1200
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
t
ZthJK
s
t
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
K/W
ZthJC
IRMS
Ptot
0 25 50 75 100 125 150
A
3 x CTD/CDT500
Circuit
W3
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
DC
180°
120°
60°
30°
DC
180°
120°
60°
30°
°C
TA
W
K/W
s
RthKA K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
Fig. 9 Transient thermal impedance
junction to case (per thyristor)
Fig. 8 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.072
180oC0.0768
120oC0.081
60oC0.092
30oC0.111
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.096
180oC0.1
120oC0.105
60oC0.116
30oC0.135
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
5 0.024 12
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