IRF7420 - International Rectifier

Parameter Max. Units

VDS Drain- Source Voltage -12 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -11.5

ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -9.2 A

IDM Pulsed Drain Current -46

PD @TA = 25°C Power Dissipation 2.5

PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 20 mW/°C

VGS Gate-to-Source Voltage ±8 V

TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C

8/2/06

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IRF7420

HEXFET® Power MOSFET

These P-Channel HEXFET® Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Description

lUltra Low On-Resistance

lP-Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

PD - 94278A

Parameter Max. Units

RθJA Maximum Junction-to-Ambient50 °C/W

Thermal Resistance

Absolute Maximum Ratings

Top View

SO-8

VDSS RDS(on) max ID

-12V 14mΩ@VGS = -4.5V -11.5A

17.5mΩ@VGS = -2.5V -9.8A

26mΩ@VGS = -1.8V -8.1A

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V 

trr Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = -2.5A

Qrr Reverse Recovery Charge ––– 61 92 µC di/dt = -100A/µs 

Source-Drain Ratings and Characteristics

-46



-2.5



 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

 Surface mounted on 1 in square Cu board, t ≤ 10sec.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 14 VGS = -4.5V, ID = -11.5A 

 ––– 17.5 VGS = -2.5V, ID = -9.8A 

 ––– 26 VGS = -1.8V, ID = -8.1A 

VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 32 ––– ––– S VDS = -10V, ID = -11.5A

––– ––– -1.0 VDS = -9.6V, VGS = 0V

––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V

QgTotal Gate Charge ––– 38 ––– ID = -11.5A

Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = -6V

Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 ––– VGS = -4.5V 

td(on) Turn-On Delay Time ––– 8.8 13 VDD = -6V, VGS = -4.5V

trRise Time ––– 8.8 13 ID = -1.0A

td(off) Turn-Off Delay Time ––– 291 437 RD = 6Ω

tfFall Time ––– 225 338 RG = 6Ω 

Ciss Input Capacitance ––– 3529 ––– VGS = 0V

Coss Output Capacitance ––– 1013 ––– pF VDS = -10V

Crss Reverse Transfer Capacitance ––– 656 ––– ƒ = 1.0MHz

IGSS

µA

mΩ

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-4.5V

-11.5A

0.1

100

0.5 1.0 1.5 2.0 2.5

V = -10V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

0.1 110 100

-V

, Drain-to-Source Voltage (V)

0.01

0.1

100

-ID, Drain-to-Source Current (A)

-1.0V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP -7.0V

-5.0V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

BOTTOM -1.0V

0.1 110 100

-V

, Drain-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

-1.0V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP -7.0V

-5.0V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

BOTTOM -1.0V

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

010 20 30 40 50

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-11.5A

V =-6V

V =-9.6V

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

100

1000

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

110 100

-VDS, Drain-to-Source Voltage (V)

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

5500

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150

T , Case Temperature( C)

-I , Drain Current (A)

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

D.U.T.

90%

10%

d(on)

d(off)

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

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Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

Fig 14b. Gate Charge Test Circuit

Fig 14a. Basic Gate Charge Waveform

Charge

D.U.T. VDS

-3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

0.0 2.0 4.0 6.0 8.0

-VGS, Gate -to -Source Voltage (V)

0.005

0.010

0.015

0.020

0.025

RDS(on)

, Drain-to -Source On Resistance (

Ω)

ID = -11.5A

0.0 10.0 20.0 30.0 40.0 50.0

-ID , Drain Current ( A )

0.02

0.04

0.06

0.08

RDS ( on ) , Drain-to-Source On Resistance (

Ω )

VGS

= -2.5V

VGS

= -1.8V

VGS

= -4.5V

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Fig 15. Typical Vgs(th) Vs.

Junction Temperature

-75 -50 -25 025 50 75 100 125 150

TJ , Temperature ( °C )

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

-VGS(th)

( V )

ID = -250µA

Fig 16. Typical Power Vs. Time

0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000

Time (sec)

100

150

200

250

300

350

400

Power (W)

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SO-8 Package Details

SO-8 Part Marking

.189

.1497

0°

.013

.050 BAS IC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BAS IC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] CAB

e1 A

8X b

0.10 [.004]

4312

F OOT P R I N T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOT E S :

1. DIMENS IONING & TOLE RANCING PER AS ME Y14.5M-1994.

2. CONT ROLLING DIMENS ION: MILLIMET ER

3. DIMENS IONS ARE S HOWN IN MIL LIMET ERS [INCHES ].

5 DIME NS ION DOE S NOT INCL UDE MOLD PROT RUS IONS .

6 DIME NS ION DOE S NOT INCL UDE MOLD PROT RUS IONS .

MOLD PROT RUSIONS NOT TO EXCEED 0.25 [.010].

7 DIME NS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O

A SUBS T RAT E.

MOLD PROT RUSIONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAS T DIGIT OF T HE YEAR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

P = DE S I GNAT E S L E AD- F R E E

PRODUCT (OPTIONAL)

A = ASSEMBLY SITE CODE

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IRF7420

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330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Tape and Reel

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/06

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