1
JANUARY 1994 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
9ELx Primary Protector Series
9EL2, 9EL3
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
Gas Discharge Tube (GDT) Replacement
Planar Passivated Junctions in a Protected Cell Construction
- Low Off-State Current
-Extended Service Life
Soldered Copper Electrodes
- High Current Capability
- Cell Construction Short Circuits Under Excessive Current Conditions
............................................ UL Recognized Components
Cell Package (Side View)
Device Symbol
Description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of
Te lcordia GR-974-CORE or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 9ELx must be
installed in a housing which maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. In usual applications, the high crowbar holding current prevents
d.c. latchup as the diverted current subsides. This 9ELx range consists of two voltage variants to meet various maximum system voltage
levels. They are designed to voltage limit and withstand the listed international lightning surges in both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to each side of the silicon chip. This
packaging approach allows heat to be removed from both sides of the silicon, resulting in the doubling of the devices thermal capacity,
enabling a power line cross current capability of 10 A rms for 1 second. One of the 9ELx’s copper electrodes is specially shaped to promote a
progressive shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 9ELx in compression, so that the cell
electrodes can be forced together during overstress testing. Under excessive power line cross conditions the 9ELx will fail short circuit,
providing maximum protection to the equipment.
Device
ITU-T K28
(10/700)
ITSP
A
GR-974-CORE
(10/1000)
ITSP
A
9EL2 ±200 ±150
9EL3 ±125 ±100
Device
V(BR)
Minimum
V
V(BO)
Minimum
V
V(BO)
Maximum
V
9EL2 ±245 ±265 ±400
9EL3 ±200 ±265
T(A)
R(B)
MD4XACAa
T
RSD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
2
JANUARY 1994 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
9ELx Primary Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Electrical Characteristics for the R and T Terminals, TA = 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
5/310 µs(ITU-T K28, 10/700 µs voltage wave shape) 9EL2 -20 °C to 65 °C
ITSP
200
A
9EL3 0 °C to 65 °C125
10/1000 µs (GR-974-CORE, 10/1000 µs voltage wave shape) 9EL2 -20 °C to 65 °C150
9EL3 0 °C to 65 °C100
Non-repetitive peak on-state current (see Note 1)
full sine wave, 50/60 Hz, 1 s 9EL2 -40 °C to 65 °CITSM
10 A rms
9EL3 0 °C to 65 °C10
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -40 to +150 °C
NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium.
2. Most PTTs quote an unloaded voltage waveform. In operation the 9ELx essentially shorts the generator output. The resulting
loaded current waveform is specified.
Parameter Test Conditions Min Typ Max Unit
V(BR) Breakdown Voltage I(BR) = ±20 mA, (see Note 3) 9EL2 -40 °C to 65 °C±245 V
V(BO) Breakover voltage dv/dt = ±0.2 V/s, RSOURCE > 200
9EL2 +15 °C to 25 °C
-40 °C to 65 °C
±265
±400 V
9EL3 +15 °C to 25 °C±200
0 °C to 65 °C±265
V(BO)
Impulse breakover
voltage
100 V/µs≤dv/dt ≤±1000 V/µs,
di/dt ≤10 A/µs
9EL2
9EL3
-40 °C to 65 °C
0 °C to 65 °C
±400
±350 V
Impulse reset
Sources are 52.5 V O.C., 260 mA S.C. and
135 V O.C., 200 mA S.C.
on-state current 25 A, 10/1000 µs impulse
9EL2
9EL3
-40 °C to 65 °C
0 °C to 65 °C
20
20 ms
IDOff-state current
VD=±50 V (see Note 4)
VD=±200 V
9EL2
9EL3
9EL2
9EL3
-40 °C to 65 °C
0 °C to 65 °C
-40 °C to 65 °C
+15 °C to 25 °C
±0.5
±0.5
±10
±1
µA
Coff Off-state capacitance f = 1 MHz, Vd=1Vrms, V
D=0, 9EL2
9EL3
-40 °C to 65 °C
0 °C to 65 °C
150
150 pF
NOTES: 3. Meets Telcordia GR-974-CORE Issue 2, December 1999 - Rated Voltage Test (4.7).
4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment.
3
JANUARY 1994 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
9ELx Primary Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for the T and R Terminals
All Measurements are Referenced to the R Terminal
-v
I(BR)
V(BR)
VD
ITSM
ITSP
V(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BR)
V(BR)
VD
ID
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAG
4
JANUARY 1994 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
9ELx Primary Protector Series
Cell Package
BUTTON CELL 9ELx
MDXXAVAa
DIMENSIONS ARE : MILLIMETERS
(INCHES)
2.11 - 2.31
(0.083 - 0.091)
0.508
(0.020) MAX.
0.178
(0.007) MAX.
Top Electrode
Sleeve
Bidirectional
Bottom Electrode
Silicon Chip
1.27 - 1.65
(0.050 - 0.065) DIA.2 x
3.76 - 4.27
(0.148 - 0.168) DIA.
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