N BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 30 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Max Units *BCV27 350 2.8 357 mW mW/C C/W BCV27 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, I E = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 0.1 A IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 0.1 A 1.0 V 1.5 V V ON CHARACTERISTICS hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, I B = 0.1 mA VBE( sat ) Base-Emitter Saturation Voltage IC = 100 mA, I B = 0.1 mA 4,000 10,000 20,000 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product CC Collector Capacitance IC = 30 mA, VCE = 5.0 V, f = 100 MHz VCB = 30 V, IE = 0, f = 1.0 MHz 220 MHz 3.5 pF Typical Pulsed Current Gain vs Collector Current 250 200 VCE = 5V 125 C 150 25 C 100 - 40 C 50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 1.6 = 1000 1.2 - 40 C 0.8 25C 125 C 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) P0 1000 BCV27 NPN Darlington Transistor (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 2 = 1000 1.6 - 40 C 25 C 1.2 125 C 0.8 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 2 1.6 - 40 C 25 C 1.2 125 C 0.8 VCE = 5V 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) P0 ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 100 VCB = 30V 10 1 0.1 50 75 100 T A- AMBIENT TEMPERATURE ( C) 125 BVCER - BREAKDOWN VOLTAGE (V) P 05 0.01 25 1000 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 62.5 62 61.5 61 60.5 60 59.5 0.1 1 10 RESISTANCE (k ) 100 1000 P0 vs Reverse Voltage f = 1.0 MHz CAPACITANCE (pF) 20 10 Cib 5 Cob 2 0.1 1 10 Vce - COLLECTOR VOLTAGE(V) P0 100 f T - GAIN BANDWIDTH PRODUCT (MHz) Input and Output Capacitance Gain Bandwidth Product vs Collector Current 50 Vce = 5V 40 30 20 10 0 1 10 20 50 IC - COLLECTOR CURRENT (mA) P 05 100 150 BCV27 NPN Darlington Transistor (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 350 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 BCV27 NPN Darlington Transistor