BCV27
C
B
E
NDiscrete POWER & Signal
Technologies
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
BCV27
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO E m i t ter - Bas e V olt age 1 0 V
ICC ollector Current - Continuous 1.2 A
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
*BCV27
PDTota l De vice Dissip at i on
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
SOT-23
Mark: FF
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
BCV27
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter T est Con ditions Min T yp Max Un its
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V
V(BR)CBO Coll ec t or -Base Br eak dow n Volt ag e IC = 10 µA, IE = 0 40 V
V(BR)EBO Em it ter - Base Br eakdown Vol tage IE = 1 00 nA , I C = 0 10 V
ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 0.1 µA
IEBO Em it ter - Cutoff Cur rent VEB = 10 V, IC = 0 0.1 µA
ON CHARACTERISTICS
hFE DC Cur rent G ain IC = 1.0 m A , VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 1 00 m A, VCE = 5.0 V
4,000
10,000
20,000
VCE(sat)Coll ector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V
VBE(sat)Base-Emitter Saturation Voltage IC = 1 00 m A, IB = 0.1 mA 1.5 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 30 mA, VCE = 5.0 V,
f = 100 M Hz 220 MHz
CCC olle c tor Cap acitan c e VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collecto r Cur rent
0.001 0.01 0.1 1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
h - TY PICAL PULSED C URRENT GAIN (K )
C
FE
25 °C
125 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturati o n
Vol ta ge vs Co l l ect o r Cu r r ent
P0
1 10 100 1000
0
0.4
0.8
1.2
1.6
I - CO L L ECTO R CURREN T (mA)
V - CO LLECTO R EMITTER VOLTAGE (V)
C
CESAT
25°C
- 40 ºC
125 ºC
ββ = 1000
BCV27
NPN Darlington Transistor
(continued)
Typical Characteristics (continued)
Base- E mitte r Satu ra tion
Voltage vs Collector Current
P05
1 10 100 1000
0
0.4
0.8
1.2
1.6
2
I - COL L ECTO R CURRENT (mA)
V - BASE EMITTER VOL T AGE (V)
C
BESAT
25 °C
- 40 ºC
125 ºC
ββ = 1000
Base Emitter ON Voltage vs
Collector Current
P0
1 10 100 1000
0
0.4
0.8
1.2
1.6
2
I - COLL ECT OR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5 V
CE
- 40 ºC
25 °C
125 ºC
Coll ecto r -E mit te r Br eakdow n
Vo ltage w i t h Resi st ance
Between Emitt er-Base
0.1 1 10 100 1000
59.5
60
60.5
61
61.5
62
62.5
RESISTAN CE (k )
BV - BREAKDOWN VOLTAGE (V)
ΩΩ
CER
Collector-Cutoff Curren t
vs Ambient T emperature
P0
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIEN T TEMPERAT URE ( C)
I - COL L ECTOR CUR RENT (n A)
A
CBO
º
V = 30V
CB
Inp ut and Output Capaci tance
vs Reverse Vol t age
P0
0.1 1 10 100
2
5
10
20
V - COLLECTOR VOLTAG E(V)
CAPACITANCE (pF)
ce
Cib
Cob
f = 1.0 MHz
G ain Bandwidth Product
vs Collector Current
P05
1 10 20 50 100 150
0
10
20
30
40
50
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 5V
ce
BCV27
NPN Darlington Transistor
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPER ATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
