THIS DOCUMENT IS FOR MAINTENANCE
PURPOSES ONLY AND IS NOT
RECOMMENDED FOR NEW DESIGNS
SL3227
3GHz NPN TRANSISTOR ARRAYS
The SL3227 is a monolithic array of the five high frequency
low current NPN transistors in a 16 lead DIL package. The
transistors exhibit typical fT of 3GHz and wideband noise
figures of 2dB. The SL3227 is pin compatible with the CA3127
and SL3127.
FEATURES
■fT Typically 3GHz
■Wideband Noise Figure 2.0dB
■VBE Matching Better Than 5mV
APPLICATIONS
■Wide Band Amplifiers
■PCM Regenerators
■High Speed Interface Circuits
■High Performance Instrumentation Amplifiers
■High Speed Modems
ABSOLUTE MAXIMUM RATINGS
The absolute maximum ratings are limiting values above
which operating life may be shortened or specified parameters
may be degraded.
All electrical ratings apply to individual transistors. Thermal
ratings apply to the total package.
The isolation pin (substrate) must be connected to the most
negative voltage applied to the package to maintain electrical
isolation.
VCB = 10 volt
VEB = 2.5 volt
VCE = 6 volt
VCI = 15volt
IC = 20 mA
Maximum individual transistor dissipation 200 mWatt
Storage temperature -55°C to +150°C
Max junction temperature +150°C
Package thermal resistance (°C/watt)
Package Type MP16
Chip to case 111
Chip to ambient 41
NOTE:If all the power is being dissipated in one transistor,
these thermal resistance figures should be increased by
100°C/watt
Fig.1 Pin connections - SL3227
ORDERING INFORMATION
SL3227 NA MP
Fig.2 Transition frequency (f
T
) v. collector current
(V
CB
= 2V, f=200MHz)
DS3628 - 1.3
MP16
ADVANCE INFORMATION
SL3227
ELECTRICAL CHARACTERISTICS
These characteristics are guaranteed over the following test conditions (unless otherwise stated)
Tamb = 22°C ± 2°C
Value Units Conditions
Min. Typ. Max.
Symbol
Collector base breakdown
Collector isolation breakdown
Base emitter breakdown
Collector emitter breakdown
Collector emitter saturation voltage
Base emitter voltage
Base emitter voltage difference,
all transistors
Input offset current
Temperature coefficient of VBE
Static forward current ratio
Emitter base leakage
Collector base leakage
Collector isolation leakage
Emitter base capacitance
Collector base capacitance
Collector isolation capacitance
Characteristic
BVCBO
BVCIO
BVEBO
LVCEO
VCE(SAT)
VBE
∆VBE
∆IB
∆VBE
T
Hfe
IEBO
ICBO
ICIO
CEB
CCB
CCI
10
16
2.5
6
0.73
35
35
40
20
40
5.0
9
0.22
0.78
0.45
0.2
-1.69
80
95
85
15
5
5
0.7
0.4
1.5
0.5
0.81
5.0
3
2.0
V
V
V
V
V
V
mV
µA
mV/°C
nA
pA
pA
pF
pF
pF
IC = 10µA
IC = 10µA
IE = 10µA
IC = 5mA
IC = 10mA, IB = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 5mA
VCE = 2V, IC = 0.1mA
VCE = 2V, IC = 1mA
VEB = 2V
VCB = 10V
VCI = 16V
VEB = 0V
VCI = 0V
VCI = 0V
Static Characteristics
Value Units Conditions
Min. Typ. Max.
Symbol
Transition frequency
Wideband noise figure
Knee of NF noise curve
Characteristic
fT
NF 3
2.0
1
GHz
dB
KHz
VCE = 2V, IC = 5mA
f = 60MHz VCC = 6V
IC = 1mA
RS = 1kΩ
Dynamic Characteristics
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© GEC Plessey Semiconductors 1994
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