1
SP4T AlGaAs PIN Diode Switch
Rev. V4
MA4AGSW4
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.7 dB Insertion Loss
32 dB Isolation at 50 GHz
Low Current consumption
-10mA for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
DESCRIPTION
The MA4AGSW4 is an Aluminum-Gallium-Arsenide,
single pole, four throw (SP4T), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Yellow areas indicate bond pads
Absolute Maximum Ratings @ TAMB = +25°C
Parameter Maximum Rating
Operating Temperature -55°C to +125°C
Storage Temperature -55°C to +150°C
Incident C.W. RF Power +23dBm C.W.
Breakdown Voltage 25V
Bias Current ± 25mA
Assembly Temperature +300°C < 10 sec
Junction Temperature +175°C
Maximum combined oper ating conditions for RF Power, D.C.
bias, and temperature : +2 3 dBm C.W. @ 10 mA (per diode) @
+85°C.
J1
J2
J3 J4
J5
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
2
SP4T AlGaAs PIN Diode Switch
Rev. V4
MA4AGSW4
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Electrical Specifications @ TA = 25°C, +/-10mA bias current
(On-wafer measurements)
RF SPECIFICATIONS
PARAMETER FREQUENCY BAND MIN TYP MAX UNITS
INSERTION LOSS
0.05 - 18 GHz 0.7 0.8 dB
18 - 50 GHz 1.0 1.4 dB
ISOLATION
0.05 - 18 GHz 25 41 dB
18 - 50 GHz 25 32 dB
INPUT RETURN LOSS
0.05 - 18 GHz 10 21 dB
18 - 50 GHz 10 22 dB
OUTPUT RETURN LOSS
0.05 - 18 GHz 10 26 dB
18 - 50 GHz 10 17 dB
SWITCHING SPEED 10 GHz 20 nS
*Note:
Typica l switching speed is measured from 10% to 90% of the detected RF voltage driven
by a TTL compatible driver. Driver output parallel RC netw ork uses a capacitor between
390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times.
3
SP4T AlGaAs PIN Diode Switch
Rev. V4
MA4AGSW4
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical R.F. Performance (Probed on Wafer) @ +25°C
TYPICAL I NSERTI ON LO SS @ -10 mA
-2
-1.5
-1
-0.5
0
0.00 10.00 20.00 30.00 40.00 50.00
FREQUENCY ( GHz )
IL ( dB )
J3 & J4 J2 & J5
TYPI CAL I SOLATI ON @ + 1 0 m A
-80
-70
-60
-50
-40
-30
-20
-10
0
0.00 10.00 20.00 30.00 40.00 50.00
F RE QUE NCY ( GHz )
ISOL ( dB )
J3 & J4 J2 & J5
4
SP4T AlGaAs PIN Diode Switch
Rev. V4
MA4AGSW4
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance (Probed on wafer) @ +25°C
TYPI CAL I NPUT RETURN LO SS @ - 10 m A
-40
-35
-30
-25
-20
-15
-10
-5
0
0.00 10.00 20.00 30.00 40.00 50.00
FREQUENCY ( GHz )
IRL ( dB )
J3 & J4 J2 & J5
TYPI CAL O UTPUT RETURN LOSS @ - 10 m A
-40
-35
-30
-25
-20
-15
-10
-5
0
0.00 10.00 20.00 30.00 40.00 50.00
FRE QUENCY ( GHz )
ORL ( dB )
J3 & J4 J2 & J5
5
SP4T AlGaAs PIN Diode Switch
Rev. V4
MA4AGSW4
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Operation of the MA4AGSW4 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching ports is required for the operation of the MA4AGSW4, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2, J3, J4 & J5 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply
current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The
bias network design sho wn below should yield > 30 dB RF to DC Isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown belo w. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information.
The lowest insertion loss, P1dB, IP3, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW4 Schematic with a Typical External 2-18 GHz Bias Network
CONTROL LEVEL (DC CURRENT) CONDITION OF RF OUTPUT
J2 J3 J4 J5 J2-J1 J3-J1 J4-J1 J5-J1
-10mA +10mA +10mA +10mA Low Loss Isolation Isolation Isolation
+10mA -10mA +10mA +10mA Isolation Lo w Loss Isolation Isolation
+10mA +10mA -10mA +10mA Isolation Isolation Lo w Loss Isolation
+10mA +10mA +10mA -10mA Isolation Isolation Isolation Lo w Loss
TYPICAL DRIVER CONNECTIONS
6
SP4T AlGaAs PIN Diode Switch
Rev. V4
MA4AGSW4
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Chip Dimensions and Bonding Pad Locations (In Yellow)
mm
DIM Minimum Nominal Maximum Minimum Nominal Maximum
A 66.0 67.0 68.0 1.676 1.702 1.727
B 28.5 29.0 29.5 0.724 0.737 0.749
C 5.9 6.0 6.1 1.499 1.524 1.549
D 19.5 20.0 20.5 0.495 0.508 0.521
E 29.5 30.0 30.5 0.749 0.762 0.775
F 8.5 9.0 9.5 0.216 0.229 0.241
G 39.5 40.0 40.5 1.003 1.016 1.029
H 3.5 4.0 4.5 0.089 0.102 0.114
PADS 3.5 4.0 4.5 0.089 0.102 0.114
mils
7
SP4T AlGaAs PIN Diode Switch
Rev. V4
MA4AGSW4
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
ASSEMBLY INSTRUCTIONS
CLEANLINESS
These chips should be handled in a clean environment.
STATIC SENSITIVITY
These Devices are considered ESD Class 1A, HBM. Proper ESD techniques should be used when handling
these devices.
GENERAL HANDLING
The protective polymer coating on the active areas of the die provides scratch and impact protection,
particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with
vacuum pickup tools, or alternatively with plastic twee zers.
ASSEMBLY TECHNIQUES
The MA4AGSW4, AlGaAs device is designed to be mounted with electrically conductive silver epoxy or with a
low temperature solder perform, which does not have a rich tin content.
SOLDER DIE ATTACH
Only solders which do not scavenge gold, such as 80/20, Au/Sn or Indalloy #2 is recommended. Do not
expose die to temperatures greater than 300°C for more than 10 seconds.
ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH
Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal
resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour.
RIBBON/WIRE BONDING
Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads.
A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the
lowest inductance and best microwave performance. For more detailed handling and assembly instructions,
see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” at
www.macomtech.com.
Ordering Information
Part Number Package
MA4AGSW4 Waffle Pack
