ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The IS2705-1 is an optically coupled isolator
consisting of two infrared light emitting diodes
connected in inverse parallel and NPN silicon
photo transistor in a space efficient dual in line
plastic package.
FEATURES
lMarked as FPA1.
lCurrent Transfer Ratio MIN. 20%
lIsolation Voltage (3.75kVRMS ,5.3kVPK )
lAll electrical parameters 100% tested
lDrop in replacement for NEC PS2705-1
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
IS2705-1
DB92857l-AAS/A5
9/10/03
HIGH DENSITY MOUNTING
AC INPUT, PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ±50mA
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 35V
Emitter-collector Voltage BVECO 6V
Collector Current 50mA
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = ±20mA
Output Collector-emitter Breakdown (BVCEO)35 VIC = 0.1mA
Emitter-collector Breakdown (BVECO) 6 VIE = 10uA
Collector-emitter Dark Current (ICEO)100 nA VCE = 20V
Coupled Current Transfer Ratio (CTR) 20 400 %±1mA IF , 5V VCE
Collector-emitter Saturation VoltageVCE (SAT) 0.2 V±20mA IF , 1mA IC
Input to Output Isolation Voltage VISO 3750 VRMS See note 1
5300 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time tr 418 µsVCE = 2V ,
Output Fall Time tf 318 µsIC = 2mA, RL = 100Ω
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
DB92857l-AAS/A5
9/10/03
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W 12 ± 0.3 ( .47 )
Pitch of sprocket holes P0 4 ± 0.1 ( .15 )
Distance of compartment F
P2 5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1 8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
CHARACTERISTIC CURVES
Fig.1 Forword Current Fig.2 Collector Power Dissiption
vs. Ambient Temperature
Fig.4 Forward Current vs. Forward
Fig.5 Current Transfer Ratio vs.
Forward Current Fig.6 Collector Current vs.
Collector-emitter Voltage
0-55
Ta=75 C
50 C 25 C
0 C
-25 C
Ta=25 C
Pc(MAX.)
5mA
10mA
20mA
vs. Ambient Temperatute
Ambient temperature Ta ( C)Ambient temperature Ta ( C)
Collector Power dissipation Pc (mW)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
CE
Ic=0.5mA
1mA
3mA
7mA
5mA
Ta=25 C
Collecotr-emitter saturation voltage
V (sat) (V)
Voltage
o
o
o
O
o
o
oo
o
o
125 0-55 12525 50 75 100
10
20
30
40
50
60
0
50
100
150
200
0
1
0
015
1
2
3
4
5
6
0.5 1.0 1.5 2.0 2.5 3.0
2
5
10
20
50
100
200
500
01002 5 10 20 50
20
40
60
80
100
120
140
160
180
200
123456789
10
30
50
105
20
40 25mA
15mA
Collector-emitter voltage VCE(V)Forward current IF(mA)
Forward current IF(mA) Forward voltage VF(V)
Forward current I F(mA)
Forward current I F(mA)
VCE=5V
Ta=25 C IF=30mA
1007550250
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
CHARACTERISTIC CURVES
tr
tf
td
ts
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature Fig.10 Response Time vs. Load
Fig.11 Frequency Response
0
CE
vs. Ambient Temperature
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Frequency f (kHz)
Response time ( s)
Relative current transfer ratio (%)
Voltage gain Av (dB)
Collector-emitter saturation voltage
V (sat) (V)
o
o
o o
o
20 40 60 80 100
50
100
150
020 40 80 100
0.2
0.0520 40 60 80 100 0.1 0.2 0.5 1 2 5 10
0.5
1
2
5
10
20
50
100
200
500
0.5
20
10
0
2 10 100 500
Resistance
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
0.02
0.04
0.06
0.08
0.10
1 5 20 50
60
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Input
Vcc
ts
Output
Output
tr
Output
Vcc
td
tf
10%
90%
Load resistance RL (k )
Collector dark current I CEO (nA)
VCE=20V
IF=5mA
VCE=2V IF=20mA
IC=1mA
VCE=2V
IC=2mA
Ta=25 C
RDRL
RDRL
RL=10kΩ1kΩ
100Ω
VCE=2V
IC=2mA
Ta=25 C
1
10
10000
1000
100
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes 1.5 minutes 1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
