Preliminary Technical Information 1500V MOS Gated Thyristor MMIX1H60N150V1 VDM A w/ Anti-Parallel Diode A G (Electrically Isolated Tab) G K K Isolated Tab Symbol Test Conditions VDM TJ 1500 V VGK VGK Continuous Transient 30 40 V V ITSM TC TC = 25C, 1s = 25C, 10s 32.0 11.8 kA kA PD TC = 25C 446 W Maximum Ratings -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V~ 50..200/11..45 N/lb 8 g = 25C to 150C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s VISOL 50/60Hz, 1 minute FC Mounting Force Weight A K G G = Gate A = Anode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IA Characteristic Values Min. Typ. Max. = 250A, VGK = 0V 1500 VGK(th) IA = 250A, VAK = VGK VT IT = 1000A, VGK = 15V 4.6 rT IT > IL, VGK = 15V 1.2 m VBO VGK = 15V 4.8 V ID VAK = 1500V, VGK = 0V IL IH IGKS 5.0 V 6.0 V 15 A 1.5 mA TJ = 125C 400 350 VAK = 0V, VGK = 30V (c) 2014 IXYS CORPORATION, All Rights Reserved 200 = Cathode Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Anti-Parallel Diode 2500V~ Electrical Isolation Very High Current Capability Advantages V 2.5 K Features VBR = 1500V High Power Density Low Gate Drive Requirement Applications Capacitive Discharge Circuits Ignition Circuits Solid State Surge Protection A A nA DS100595A(6/14) MMIX1H60N150V1 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Ciks Coks Crks VAK = 25V, VGK = 0V, f = 1MHz Qg(on) Qgk Qga tri Characteristic Values Min. Typ. Max. 5120 340 84 pF pF pF IC = 60A, VGK = 15V, VAK = 600V 180 33 62 nC nC nC Capacitive Discharge, TJ = 25C 100 ns 50 ns 100 ns 50 ns 0.05 19 0.28 C/W C/W C/W IA = 2000A, VGK = 15V, RG = 1 td VAK = 1000V, L < 20nH, Notes 2 & 3 tri Capacitive Discharge, TJ = 125C td VAK = 1000V, L < 20nH, Notes 2 & 3 IA = 2000A, VGK = 15V, RG = 1 RthJC RthCS RthJA Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF IF = 100A, VGK = 0V, Note 1 IRM IF = 50A, VGK = 0V, -diF/dt = 200A/s, VR = 300V trr Characteristic Values Min. Typ. Max. 1.8 20 A 700 ns 0.50 C/W RthJC Notes: V 1. Pulse test, t 300s, duty cycle, d 2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 9 & 10. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1H60N150V1 Fig. 2. Extended Output Characteristics @ T J = 125C Fig. 1. Extended Output Characteristics @ T J = 25C 1200 1200 VGK = 20V 17V 15V 13V 11V 10V 800 IA - Amperes IA - Amperes 1000 VGK = 20V 17V 13V 11V 10V 9V 8V 1000 600 800 600 400 400 200 200 9V 8V 7V 0 0 2 4 6 8 10 7V 6V 0 0 12 2 4 6 8 10 12 VAK - Volts VAK - Volts Fig. 3. Extended Output Characteristics @ T J = - 40C Fig. 4. Gate Charge 16 1200 800 I A = 60A I G = 10mA 12 VGK - Volts IA - Amperes 1000 VAK = 600V 14 VGK = 20V 17V 15V 13V 12V 600 10 8 11V 6 10V 4 400 9V 8V 7V 200 2 0 0 0 2 4 6 8 10 0 12 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs VAK - Volts Fig. 5. Capacitance Fig. 6. Forward Voltage Drop of Intrinsic Diode 10,000 180 160 TJ = 25C 140 1,000 TJ = 125C 120 IF - Amperes Capacitance - PicoFarads Ciks Coks 100 100 80 60 40 Crks 20 f = 1 MHz 10 0 0 5 10 15 20 25 VAK - Volts (c) 2014 IXYS CORPORATION, All Rights Reserved 30 35 40 0 0.4 0.8 1.2 VF - Volts 1.6 2 2.4 MMIX1H60N150V1 Fig. 7. Maximum Transient Thermal Impedance Z(th)JC - C / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 8. Cauer Thermal Network i 1 2 3 4 Ri () 0.018327 0.052439 0.099100 0.048364 Ci (F) 0.024851 0.058268 0.208110 4.000000 Fig. 9. Capacitive Discharge Circuit Fig. 10. Capacitive Discharge Waveform IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: MMIX1_60N150V1(8A) 02-19-14 MMIX1H60N150V1 b PIN: (c) 2014 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Cathode 13-24 = Anode