MMIX1H60N150V1 - IXYS - Datasheet.Live

1500V MOS Gated

Thyristor

w/ Anti-Parallel Diode

VDM = 1500V

Symbol Test Conditions Maximum Ratings

VDM TJ = 25°C to 150°C 1500 V

VGK Continuous ±30 V

VGK Transient ±40 V

ITSM TC = 25°C, 1μs 32.0 kA

TC = 25°C, 10μs 11.8 kA

PDTC = 25°C 446 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062 in.) from Case for 10s 260 °C

VISOL 50/60Hz, 1 minute 2500 V~

FCMounting Force 50..200/11..45 N/lb

Weight 8 g

DS100595A(6/14)

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

VBR IA = 250A, VGK = 0V 1500 V

VGK(th) IA= 250μA, VAK = VGK 2.5 5.0 V

VTIT= 1000A, VGK = 15V 4.6 6.0 V

rT IT> IL, VGK = 15V 1.2 m

VBO VGK = 15V 4.8 V

IDVAK = 1500V, VGK = 0V 15 A

TJ = 125C 1.5 mA

IL 400 A

IH 350 A

IGKS VAK = 0V, VGK = 30V 200 nA

Features

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

Anti-Parallel Diode

2500V~ Electrical Isolation

Very High Current Capability

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Capacitive Discharge Circuits

Ignition Circuits

Solid State Surge Protection

(Electrically Isolated Tab)

MMIX1H60N150V1

G

K

A

G = Gate K = Cathode

A = Anode

G

A

K

A

K

G

Isolated Tab

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

MMIX1H60N150V1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

Ciks 5120 pF

Coks VAK = 25V, VGK = 0V, f = 1MHz 340 pF

Crks 84 pF

Qg(on) 180 nC

Qgk IC = 60A, VGK = 15V, VAK = 600V 33 nC

Qga 62 nC

tri 100 ns

td 50 ns

tri 100 ns

td 50 ns

RthJC 0.28 °C/W

RthCS 0.05 °C/W

RthJA 19 °C/W

Capacitive Discharge, TJ = 25°C

IA = 2000A, VGK = 15V, RG = 1

VAK = 1000V, L < 20nH, Notes 2 & 3

Capacitive Discharge, TJ = 125°C

IA = 2000A, VGK = 15V, RG = 1

VAK = 1000V, L < 20nH, Notes 2 & 3

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

VFIF = 100A, VGK = 0V, Note 1 1.8 V

IRM 20 A

trr 700 ns

RthJC 0.50 C/W

IF = 50A, VGK = 0V,

-diF/dt = 200A/μs, VR = 300V

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. It is recommended to use a gate driver capable of supplying more than 4Amps

and >15V gate voltage.

3. Refer to fig. 9 & 10.

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

MMIX1H60N150V1

Fi g. 1. Extend ed Outp u t C har acteri sti cs @ T

J

= 25ºC

0

200

400

600

800

1000

1200

024681012

VAK - Volts

IA

-

Amperes

V

GK

= 20

V

17

V

15

V

13

V

11

V

10

V

9

V

8

V

7

V

Fig . 4. Gate Ch arg e

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180 200

QG - NanoCoul omb s

VGK - Vol ts

V

AK

= 600V

I

A

= 60A

I

G

= 10mA

Fi g . 5. C apaci tance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

VAK - Volts

Capacitance - PicoFarads

f

= 1 MH

z

Ciks

Coks

Crks

Fi g . 2. Extend ed Ou tpu t C har acter isti cs @ T

J

= 125ºC

0

200

400

600

800

1000

1200

024681012

VAK - Volts

IA - Amperes

V

GK

= 20V

17

V

13

V

11

V

10

V

9

V

8

V

7

V

6

V

Fig. 3. Extended Output Characteristics @ T

J

= - 40ºC

0

200

400

600

800

1000

1200

024681012

VAK - V olt s

IA - A mperes

V

GK

= 20

V

17

V

15

V

13

V

12

V

7

V

8

V

9

V

11

V

10

V

Fig. 6. Forward Voltag e Drop of Intrinsic Diode

0

20

40

60

80

100

120

140

160

180

0 0.4 0.8 1.2 1.6 2 2.4

VF - Vol ts

IF - Amperes

T

J

= 125ºC

T

J

= 25ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

MMIX1H60N150V1

IXYS REF: MMIX1_60N150V1(8A) 02-19-14

Fig. 10. Capacitive Discharge Waveform

Fig. 9. Capacitive Discharge Circuit

Fi g . 7. Maximu m Tr an si en t Ther mal I mp ed an ce

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 8. Cauer Thermal Network

i Ri () Ci (F)

1 0.018327 0.024851

2 0.052439 0.058268

3 0.099100 0.208110

4 0.048364 4.000000

MMIX1H60N150V1

PIN: 1 = Gate

5-12 = Cathode

13-24 = Anode

b