GU-E PhotoMOS (AQW21EH) TESTING General use and economy type. DIP (2 Form A) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW21EH) FEATURES 6.4 .252 9.86 .388 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Compact 8-pin DIP size The device comes in a compact (W)6.4x(L)9.86x(H)3.2 mm (W).252x(L).388x(H).126 inch, 8-pin DIP size (through hole terminal type). 3. Applicable for 2 Form A use as well as two independent 1 Form A use 4. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 5. High sensitivity, high speed response. Can control a maximum 0.14 A load current with a 5 mA input current. Fast operation speed of 0.5 ms (typical). (AQW210EH) 6. Low-level off state leakage current TYPICAL APPLICATIONS * Modem * Telephone equipment * Security equipment * Sensors TYPES Output rating* Type AC/DC type I/O isolation voltage Reinforced 5,000 V Load voltage Load current 60 V 350 V 400 V 600 V 500 mA 120 mA 100 mA 40 mA Part No. Through hole terminal Tube packing style AQW212EH AQW210EH AQW214EH AQW216EH Packing quantity Surface-mount terminal AQW212EHA AQW210EHA AQW214EHA AQW216EHA Tape and reel packing style Picked from the Picked from the 1/2/3/4-pin side 5/6/7/8-pin side AQW212EHAX AQW212EHAZ AQW210EHAX AQW210EHAZ AQW214EHAX AQW214EHAZ AQW216EHAX AQW216EHAZ Tube Tape and reel 1 tube contains 40 pcs. 1 batch contains 400 pcs. 1,000 pcs. *Indicate the peak AC and DC values. Note: For space reasons, the SMD terminal shape indicator "A" and the package type indicator "X" and "Z" are omitted from the seal. RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Input Item LED forward current Symbol IF AQW212EH(A) AQW210EH(A) LED reverse voltage VR 50mA 5V AQW214EH(A) Peak forward current IFP 1A AQW216EH(A) f =100 Hz, Duty factor = 0.1% Power dissipation Pin Load voltage (peak AC) VL 60 V 350 V 400 V 600 V Continuous load current (peak AC) IL 0.5 A (0.6 A) 0.12 A (0.14 A) 0.1 A (0.13 A) 0.04 A (0.05 A) Peak load current Ipeak 1.5 A 0.36 A 0.3 A 0.15 A Power dissipation Total power dissipation I/O isolation voltage Pout PT Viso 800mW 850mW 5,000 V AC Operating Topr -40C to +85C -40F to +185F Storage Tstg -40C to +100C -40F to +212F Output Temperature limits Remarks 75mW All Rights Reserved (c) COPYRIGHT Matsushita Electric Works, Ltd. Peak AC, DC ( ): in case of using only 1 channel 100 ms (1 shot), VL= DC Non-condensing at low temperatures GU-E PhotoMOS (AQW21EH) 2. Electrical characteristics (Ambient temperature: 25C 77F) Item LED operate current LED turn off current Input LED dropout voltage On resistance Output Off state leakage current Turn on time* Transfer characteristics Turn off time* I/O capacitance Symbol AQW212EH(A) Typical Maximum Minimum Typical Typical Maximum Typical Maximum Maximum Typical Maximum Typical Maximum Typical Maximum Initial I/O isolation Minimum resistance IFon IFoff VF Ron AQW210EH(A) AQW214EH(A) 1.2mA 3.0mA 0.4mA 1.1mA 1.25 V (1.14 V at IF=5mA) 1.5V AQW216EH(A) IL=Max. IL=Max. IF=50mA 0.83 18 26 52 2.5 25 35 120 IF=5mA IL=Max. Within 1 s on time IF=0mA VL=Max. 1 A ILeak 1ms 4ms Ton 0.5ms 2.0ms IF=5mA IL=Max. 0.08ms Toff 0.04ms IF=5mA IL=Max. 1.0ms 0.8pF 1.5pF f =1MHz VB =0V 1,000M 500V DC Ciso Riso Condition Note: Recommendable LED forward current IF= 5 to 10mA.n *Turn on/Turn off time Input 90% Output 10% Toff Ton REFERENCE DATA 1-(1). Load current vs. ambient temperature characteristics Allowable ambient temperature: -20C to +85C -4F to +185F 1-(2). Load current vs. ambient temperature characteristics Allowable ambient temperature: -40C to +85C -40F to +185F AQW210EH AQW214EH (using only 1 channel) (using only 1 channel) 100 AQW214EH (using 2 channels) AQW210EH (using 2 channels) 50 0.7 0.6 0.5 0.4 0.07 0.06 AQW212EH (using only 1 channel) Load current, mA 150 Allowable ambient temperature: -40C to +85C -40F to +185F 0.8 Load current, mA Load current, mA 200 1-(3). Load current vs. ambient temperature characteristics AQW212EH (using 2 channels) 0.3 0 20 40 60 8085 100 Ambient temperature, C 0 -40 -20 0.04 0.03 AQW216EH (using only 1 channel) AQW216EH (using 2 channels) 0.02 0.2 0.01 0.1 0 -40 -20 0.05 0 20 40 60 80 85 100 Ambient temperature, C All Rights Reserved (c) COPYRIGHT Matsushita Electric Works, Ltd. 0 -40 -20 0 20 40 60 80 85 100 Ambient temperature, C GU-E PhotoMOS (AQW21EH) 2-(1). On resistance vs. ambient temperature characteristics Measured portion: between terminals 5 and 6, 7 and 8; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 2-(2). On resistance vs. ambient temperature characteristics Measured portion: between terminals 5 and 6, 7 and 8; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 100 AQW214EH 30 AQW210EH 20 1.5 AQW212EH 1 0.5 10 -20 0 20 40 60 0 -40 8085 -20 2.5 0.25 Turn off time, ms 2 AQW212EH AQW210EH AQW214EH 20 40 60 0.2 0.15 AQW212EH AQW210EH AQW214EH 0 8085 Sample: All types; Load voltage: Max. (DC); Continuous load current: Max. (DC) -40 -20 0 20 40 60 3 2 1 3 2 0 20 40 60 8085 Ambient temperature, C 8-(2). Current vs. voltage characteristics of output at MOS portion Measured portion: between terminals 3 and 4; Ambient temperature: 25C 77F Current, mA 1.3 1.2 -40 -20 0 20 40 60 8085 Ambient temperature, C 8-(3). Current vs. voltage characteristics of output at MOS portion Measured portion: between terminals 3 and 4; Ambient temperature: 25C 77F Current, A Current, A 0.4 0.2 AQW212EH 1 -6 -4 -2 0.06 0.04 0.02 0 AQW216EH 2 4 6 Voltage, V -0.02 0 AQW214EH 1 2 3 4 -20 Voltage, V -40 -60 -80 -100 -120 AQW210EH -140 50mA 30mA 20mA 10mA 5mA 1.1 0 0 20 40 60 8085 Ambient temperature, C Measured portion: between terminals 5 and 6, 7 and 8; Ambient temperature: 25C 77F Measured portion: between terminals 5 and 6, 7 and 8; Ambient temperature: 25C 77F 10-3 10-6 10-9 AQW214EH -0.04 -0.4 -0.6 -0.06 -0.08 5 9-(1). Off state leakage current vs. load voltage characteristics 0.08 -0.2 -20 8-(1). Current vs. voltage characteristics of output at MOS portion 1.4 0.6 0.5 Voltage, V -40 140 120 100 80 60 40 20 -5 -4 -3 -2 -1 1.0 0 80 85 4 0 80 85 Sample: All types; LED current: 5 to 50 mA LED dropout voltage, V LED turn off current, mA 4 0 60 Sample: All types; Load voltage: Max. (DC); Continuous load current: Max. (DC) 1.5 -0.5 40 1 7. LED dropout voltage vs. ambient temperature characteristics 5 -1 20 5. LED operate current vs. ambient temperature characteristics Ambient temperature, C 6. LED turn off current vs. ambient temperature characteristics -20 0 AQW216EH Ambient temperature, C -40 -20 Ambient temperature, C 0.05 AQW216EH 0 40 5 0.1 0.5 AQW216EH 0 -40 80 85 60 Off state leakage current, A Turn on time, ms 0.3 -40 -20 40 Sample: All types LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 3 0 20 4. Turn off time vs. ambient temperature characteristics Sample: All types LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 1 60 Ambient temperature, C 3. Turn on time vs. ambient temperature characteristics 1.5 0 LED operate current, mA -40 80 20 Ambient temperature, C 0 On resistance, 40 0 Measured portion: between terminals 5 and 6, 7 and 8; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 2 On resistance, On resistance, 50 2-(3). On resistance vs. ambient temperature characteristics AQW210EH 10-12 0 20 40 60 80 Load voltage, V All Rights Reserved (c) COPYRIGHT Matsushita Electric Works, Ltd. 100 GU-E PhotoMOS (AQW21EH) 9-(2). Off state leakage current vs. load voltage characteristics Measured portion: between terminals 5 and 6, 7 and 8; Ambient temperature: 25C 77F 10. Turn on time vs. LED forward current characteristics Sample: All types Measured portion: between terminals 5 and 6, 7 and 8; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F 10-7 10-9 10-13 0 AQW212EH 20 2 AQW210EH AQW214EH 1.5 AQW212EH 0.5 40 60 80 Load voltage, V AQW216EH 10 20 30 40 50 60 12-(2). Output capacitance vs. applied voltage characteristics Measured portion: between terminals 5 and 6, 7 and 8; Frequency: 1 MHz; Ambient temperature: 25C 77F 50 Output capacitance, pF 200 40 30 20 AQW216EH 10 20 30 150 100 50 AQW210EH AQW214EH 40 Applied voltage, V 50 0 AQW212EH 0.05 AQW212EH 0 5 10 15 20 25 0 0 10 20 30 40 50 LED forward current, mA LED forward current, mA Measured portion: between terminals 5 and 6, 7 and 8; Frequency: 1 MHz; Ambient temperature: 25C 77F 0 AQW210EH AQW214EH 0.1 AQW216EH 0 100 12-(1). Output capacitance vs. applied voltage characteristics 10 0.15 1 AQW216EH 10 Turn off time, ms Turn on time, ms Off state leakage current, A 0.2 2.5 10-5 -11 Output capacitance, pF Sample: All types Measured portion: between terminals 5 and 6, 7 and 8; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F 3 10-3 0 11. Turn off time vs. LED forward current characteristics 30 Applied voltage, V All Rights Reserved (c) COPYRIGHT Matsushita Electric Works, Ltd. 60