)6 X T &ORFN*HQHUDWRU,& $GYDQFH,QIRUPDWLRQ February 1999 1.0 Figure 2: Pin Configuration Features On-board crystal oscillator * Phase-locked loop (PLL) synthesizes desired CLK frequency * Internal loop filter * Internal crystal oscillator load capacitance (16pF nominal) * Only external components required are decoupling capacitors * Minimal board footprint (8-pin 0.150" SOIC package) VSS 1 XOUT 2 XIN 3 VDD 4 FS6118 * 8 VDD 7 CLK 6 VSS 5 n/c 8-pin 0.150" SOIC Table 1: Pin Descriptions Key: AI = Analog Input; AO = Analog Output; DI = Digital Input; DIU = Input with Internal Pull-Up; DID = Input with Internal Pull-Down; DIO = Digital Input/Output; DI-3 = Three-Level Digital Input, DO = Digital Output; P = Power/Ground; # = Active Low pin 2.0 Description The FS6118 is a monolithic CMOS frequency synthesizer IC designed for cost sensitive or space limited applications. An on-board crystal oscillator accepts a quartz crystal and provides a different, synthesized frequency on the CLK output. The device is packaged in an 8-pin SOIC package for a minimal board footprint. Custom factory-programmed clock frequencies are available. Please contact your local AMI sales representative for more information. PIN TYPE NAME DESCRIPTION 1 P VSS 2 AO XOUT 3 AI XIN 4 P VDD Power supply (+5V) 5 -- N/C No Connection 6 P VSS Ground 7 DO CLK Clock Output 8 P VDD Power Supply (+5V) Ground Crystal oscillator feedback Crystal oscillator drive Table 2: Font Description Figure 1: Block Diagram XIN DEVICE CRYSTAL FREQUENCY (MHz) CLK FREQUENCY (MHz) FS6118-01 14.31818 40.0000 Custom frequencies available - contact AMI for more information Crystal Oscillator PhaseLocked Loop CLK XOUT FS6118 This document contains information on a product under development. American Microsystems, Inc. reserves the right to change or discontinue this product without notice. ,62 2.4.99 )6 X T &ORFN*HQHUDWRU,& $GYDQFH,QIRUPDWLRQ 3.0 February 1999 Electrical Specifications Table 3: Absolute Maximum Ratings Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the device at these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance, functionality, and reliability. PARAMETER Supply Voltage (VSS = ground) SYMBOL MIN. MAX. UNITS VDD VSS-0.5 7 V Input Voltage, dc VI VSS-0.5 VDD+0.5 V Output Voltage, dc VO VSS-0.5 VDD+0.5 V Input Clamp Current, dc (VI < 0 or VI > VDD) IIK -50 50 mA Output Clamp Current, dc (VI < 0 or VI > VDD) IOK -50 50 mA Storage Temperature Range (non-condensing) TS -65 150 C Ambient Temperature Range, Under Bias TA -55 Junction Temperature TJ Lead Temperature (soldering, 10s) Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7) 125 C 125 C 260 C 2 kV CAUTION: ELECTROSTATIC SENSITIVE DEVICE Permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy electrostatic discharge. Table 4: Operating Conditions PARAMETER SYMBOL Supply Voltage VDD Ambient Operating Temperature Range TA CONDITIONS/DESCRIPTION 5V 10% MIN. TYP. MAX. 4.5 5.0 5.5 V 70 C 0 UNITS 2.4.99 ,62 2 )6 X T &ORFN*HQHUDWRU,& $GYDQFH,QIRUPDWLRQ February 1999 4.0 Package Information Table 5: 8-pin SOIC (0.150") Package Dimensions 8 DIMENSIONS INCHES MILLIMETERS MIN. MAX. MIN. MAX. A 0.061 0.068 1.55 1.73 A1 0.004 0.0098 0.102 0.249 A2 0.055 0.061 1.40 1.55 B 0.013 0.019 0.33 0.49 C 0.0075 0.0098 0.191 0.249 D 0.189 0.196 4.80 4.98 E 0.150 0.157 3.81 3.99 e 0.050 BSC 0.230 0.244 5.84 6.20 h 0.010 0.016 0.25 0.41 L 0.016 0.035 0.41 0.89 0 8 E H 1 ALL RADII: 0.005" TO 0.01" h x 45 B 7 typ. e 1.27 BSC H R X T 0 A2 A D A1 BASE PLANE 8 C L SEATING PLANE Table 6: 8-pin SOIC (0.150") Package Characteristics PARAMETER Thermal Impedance, Junction to Free-Air Lead Inductance, Self SYMBOL JA L11 CONDITIONS/DESCRIPTION TYP. UNITS Air flow = 0 m/s 173 C/W Corner lead 2.0 Center lead 1.6 nH Lead Inductance, Mutual L12 Any lead to any adjacent lead 0.4 nH Lead Capacitance, Bulk C11 Any lead to VSS 0.27 pF 2.4.99 ,62 3 )6 X T &ORFN*HQHUDWRU,& $GYDQFH,QIRUPDWLRQ 5.0 February 1999 Ordering Information ORDERING CODE DEVICE NUMBER PACKAGE TYPE OPERATING TEMPERATURE RANGE SHIPPING CONFIGURATION 11640-802 FS6118-01 8-pin (0.150") SOIC (Small Outline Package) 0C to 70C (Commercial) Tape-and-Reel 11640-812 FS6118-01 8-pin (0.150") SOIC (Small Outline Package) 0C to 70C (Commercial) Tubes Copyright (c) 1998 American Microsystems, Inc. Devices sold by AMI are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMI makes no warranty, express, statutory implied or by description, regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. AMI makes no warranty of merchantability or fitness for any purposes. AMI reserves the right to discontinue production and change specifications and prices at any time and without notice. AMI's products are intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recommended without additional processing by AMI for such applications. American Microsystems, Inc., 2300 Buckskin Rd., Pocatello, ID 83201, (208) 233-4690, FAX (208) 234-6796, WWW Address: http://www.amis.com E-mail: tgp@amis.com 2.4.99 ,62 4