Diodes and Rectifiers Miniature Diodes in glass package Characteristics at Tap = 25C Type Maximum ratings NKT Equiv. Case Mati. Construction Vem leu Ve (lp) Ip (Vp) Useage Vv mA Vv mA uA (Vv) OA91 DO3 DO? Ge Pt. Contact 115 150 < 3.3 (30) <180 (75) Gen Purpose OA 90 D3 DO7 Ge Pt, Contact 30 45 <3.2 (30) < 450 (20) AM Detector OA 47 D5 DO? Ge Gold Bonded 25 110 <0.65 (30) < 100 (25) Switch OA 79 D542 DO7 Ge Pt. Contact 45 100 < 40 (30) <18 (10) FM Detector IN 4148 D4148 D035 Si Diffused 100 225 <1.0 (10) <5.0 (75) Fast Switch Silicon Rectifiers (nom. current 1A) in epoxy packages Type Maximum ratings Characteristics at Tamb = 25C NKT 1 Equiv. Vem lFAV lrav? 'FRM lesm Tu Vp (@ 14) Ip (Vp) Vv A A A A c Vv uA (V} 1N 4001 D36/50 50 1 0.75 10 50 150 <1,1 <5 (50) 1N 4002 D36/100 100 1 0.75 10 50 150 <1,1 <5 (100) 1N 4003 D36/200 200 1 0.75 10 50 150 <1,1 <5 (200) 1N 4004 D36/400 400 1 0.75 10 50 150 <1,1 <5 (400) 1N 4005 D36/600 600 1 0.75 10 50 150 <1,1 <5 (600) 1N 4006 D36/800 800 1 0.75 10 50 150 <1,1 <5 (800) IN 4007 | D36/1000 1000 1 0.75 10 50 150 <1,1 <5 (1000) QO Tamb= 75C Tamb= 100C 8 | 8 | 2 E ! m. .2,7 ele maxt.5a? E max.305 x | x 4 e W e 58 Cathode Ew f Cathode Mark Mark to Cathode 8 co Mark E | = 7 i 19.5 0,5 E os @ EPOXY DO7 D0 35 IN 4001 ... 7