VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
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Revision: 07-Nov-11 1Document Number: 94339
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High Voltage, Input Rectifier Diode, 20 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Designed and qualified according to
JEDEC-JESD47
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 approved
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRODUCT SUMMARY
Package TO-220FP
IF(AV) 20 A
VR800 V, 1200 V
VF at IF1.1 V
IFSM 300 A
TJ max. 150 °C
Diode variation Single die
Anode
13
2
Cathode
Base
cathode
TO-220 FULL-PAK
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W 18 22 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 20 A
VRRM Range 800/1200 V
IFSM 300 A
VF10 A, TJ = 25 °C 1.0 V
TJ- 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-20ETS08FPPbF, VS-20ETS08FP-M3 800 900 1
VS-20ETS12FPPbF, VS-20ETS12FP-M3 1200 1300
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
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Revision: 07-Nov-11 2Document Number: 94339
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 51 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 316 A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2t for fusing I2tt = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 20 A, TJ = 25 °C 1.1 V
Forward slope resistance rtTJ = 150 °C 10.4 m
Threshold voltage VF(TO) 0.85 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM
0.1 mA
TJ = 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 2.8
°C/W
Maximum thermal resistance,
junction to ambient RthJA 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6.0 (5.0) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220 FULL-PAK (94/V0) 20ETS08FP
20ETS12FP
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 07-Nov-11 3Document Number: 94339
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
100
125
150
75
50
25
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
24201612
084
Conduction angle
Ø
VS-20ETS.. Series
180°
120°
90°
60°
30°
75
100
125
150
50
25
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
3530252015105
0
360°
180°
120°
90°
60°
30°
VS-20ETS.. Series
Ø
Conduction period
5
0
25
20
15
10
30
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
24201612840
RMS limit
180°
120°
90°
60°
30°
VS-20ETS.. Series
TJ = 150 °C
Conduction angle
Ø
5
30
25
20
15
10
0
35
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
515 2520
10
0
VS-20ETS.. Series
T
J
= 150 °C
Ø
Conduction period
DC
180°
120°
90°
60°
30°
RMS limit
50
300
200
250
150
100
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 100
1
VS-20ETS.. Series
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
50
300
250
200
150
100
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
0.1 1
0.01
VS-20ETS.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
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Revision: 07-Nov-11 4Document Number: 94339
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
100
10
1000
IF - Instantaneous
Forward Current (A)
Instantaneous Forward Voltage (V)
3.53.02.52.01.51.00.5 4.0
0
T
J
= 25 °C
T
J
= 150 °C
VS-20ETS.. Series
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (°C/W)
VS-20ETS.. Series
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 07-Nov-11 5Document Number: 94339
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20ETS08FPPbF 50 1000 Antistatic plastic tubes
VS-20ETS08FP-M3 50 1000 Antistatic plastic tubes
VS-20ETS12FPPbF 50 1000 Antistatic plastic tubes
VS-20ETS12FP-M3 50 1000 Antistatic plastic tubes
1
- Current rating (20 = 20 A)
- Vishay Semiconductors product
2
- Circuit configuration:
3
- Package:
T = TO-220
FULL-PAK
4
- Type of silicon:
S = Standard recovery rectifier
5
- Voltage ratings
6
-
7
8
E = Single diode
08 = 800 V
12 = 1200 V
Device code
51 32 4 6 7 8
20VS- E T S 12 FP PbF
-Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95005
Part marking information TO-220 FP PbF www.vishay.com/doc?95009
TO-220 FP -M3 www.vishay.com/doc?95440
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 20-Jul-11 1Document Number: 95005
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DIMENSIONS in millimeters
5° ± 0.5°
3.3
3.1
5° ± 0.5°
0.9
0.7
2.54 TYP.
2.54 TYP.
10.6
10.4
3.7
3.2 7.31
6.91
0.61
0.38
2.85
2.65
2.8
2.6
1.4
1.3
10°
4.8
4.6
16.0
15.8
16.4
15.4
(2 places)
R 0.7
R 0.5
Hole Ø 3.4
3.1
TYP.
1.15
1.05
13.56
13.05
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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