Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 12/99A
21–23 GHz GaAs MMIC
Medium Power Amplifier
Features
■Single Bias Supply Operation (6 V)
■22 dBm Typical P1 dB Output Power
at 23 GHz
■14 dB Typical Small Signal Gain
■0.25 µm Ti/Pd/Au Gates
■100% On-Wafer RF and DC Testing
■100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA022P2-00
Description
Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P1 dB of 22 dBm with 13 dB
associated gain guaranteed across frequency range
21–23 GHz. The chip uses Alpha’s proven 0.25 µm
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance.
Parameter Condition Symbol Min. Typ.2Max. Unit
Drain Current (at Saturation) IDS 280 300 mA
Small Signal Gain F = 21–23 GHz G 12 14 dB
Input Return Loss F = 21–23 GHz RLI-8 -6 dB
Output Return Loss F = 21–23 GHz RLO-9 -7 dB
Output Power at 1 dB Gain Compression F = 23 GHz P1 dB 19 22 dBm
Saturated Output Power F = 23 GHz PSAT 21 23.5 dBm
Gain at Saturation F = 23 GHz GSAT 11 dB
Thermal Resistance1ΘJC 69 °C/W
Electrical Specifications at 25°C (VDS = 6 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.571
3.268
1.576
3.400
0.000
1.572
1.700
0.850
0.000
RF OUT
RF IN
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)7 V
DC
Power In (PIN) 19 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
21–23 GHz GaAs MMIC Medium Power Amplifier AA022P2-00
2Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com
Specifications subject to change without notice. 12/99A
20
0
-10
-20
10
5
-5
-15
15
1918 20 21
S21
Typical Small Signal Performance
S-Parameters (VDS = 6 V IDS = 240 mA,
TA = 25˚C)
22
Frequency (GHz)
(dB)
23 24 25 26
S11
S22
Typical Performance Data
RF OUTRF IN
6 V
.01 µF
50 pF
Bias Arrangement
Detail A
RF IN RF OUT
VDS
VDS
See
Detail A
Circuit Schematic
For biasing on, adjust VDS from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
