1617AB5 5 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB5 is a COMMON EMITTER transistor capable of providing 5 Watts PEP of Class AB, RF output power over the band 1626- 1660 MHz. This transistor is specifically designed for SATCOM BASE STATION amplifier applications. It includes Input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide high reliability and supreme ruggedness. 55CW COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 20 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage LVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 55 Volts 27 Volts 3.5 Volts 2.0 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 150oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS P-1dB Pg IMD3 VSWR Power Out 1 dB comp pt. Power Gain Intermod. distortion -3rd Load Mismatch Tolerance BVces BVceo BVebo Ices hFE Cob Collector to Emitter Breakdown Collector to EmitterBreakdown Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Output Capacitance Thermal Resistance jc TEST CONDITIONS F =1660 MHz Icq = 20 mAmpsVcc= 26V 5 W PEP, Two Tone MIN TYP 5 9.0 11 -32 6:1 Ic = 15 mA Ic = 15 mA Ie = 10 mA Vce = 26 Volts 55 27 3.5 Vce = 5 V, Ic =0.1 A F =1 MHz, Vcb = 28 V 20 Tc = 25oC MAX 5 100 6 6.0 UNITS Watt dB dBc Volts Volts Volts mA pF C/W o Issue A, February 1997 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120