SUMMARY
V(BR)DSS = 30V; RDS(ON) = 0.12 ID= 2.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makesthemidealforhighefficiency,lowvoltage,powermanagementapplications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23 package
APPLICATIONS
•DC - DC Converters
•Power Management Functions
•Motor control
DEVICE MARKING
•7N3
ZXMN3A01F
ISSUE 2 - JULY 2002
1
30V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMN3A01FTA 7” 8mm 3000 units
ZXMN3A01FTC 13” 8mm 10000 units
ORDERING INFORMATION
Top View
PINOUT
SOT23
ZXMN3A01F
ISSUE 2 - JULY 2002
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 200 °C/W
Junction to Ambient (b) RθJA 155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 30 V
Gate Source Voltage VGS 20 V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID2.0
1.6
1.8
A
Pulsed Drain Current (c) IDM 8A
Continuous Source Current (Body Diode) (b) IS1.3 A
Pulsed Source Current (Body Diode) (c) ISM 8A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD625
5mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD806
6.4 mW
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
ZXMN3A01F
ISSUE 2 - JULY 2002
3
100m 1 10
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
IDDrainCurrent (A)
VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
MaximumPower (W)
CHARACTERISTICS
ZXMN3A01F
ISSUE 2 - JULY 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 0.5 µAVDS=30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1V
ID=250µA, VDS=V
GS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.106 0.12
0.18 Ω
ΩVGS=10V, ID=2.5A
VGS=4.5V, ID=2.0A
Forward Transconductance (1)(3) gfs 3.5 S VDS=4.5V,ID=2.5A
DYNAMIC (3)
Input Capacitance Ciss 190 pF VDS=25V,V
GS=0V,
f=1MHz
Output Capacitance Coss 38 pF
Reverse Transfer Capacitance Crss 20 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.7 ns
VDD =15V, ID=2.5A
RG
@
6.0Ω,V
GS=10V
Rise Time tr2.3 ns
Turn-Off Delay Time td(off) 6.6 ns
Fall Time tf2.9 ns
Gate Charge Qg2.3 nC VDS=15V,VGS=5V,
ID=2.5A
Total Gate Charge Qg3.9 nC VDS=15V,VGS=10V,
ID=2.5A
Gate-Source Charge Qgs 0.6 nC
Gate-Drain Charge Qgd 0.9 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=1.7A,
VGS=0V
Reverse Recovery Time (3) trr 17.7 ns TJ=25°C, IF=2.5A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 13.0 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3A01F
ISSUE 2 - JULY 2002
5
0.1 1 10
0.1
1
10
0.1 1 10
0.1
1
10
2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1 10
0.1
1
0.4 0.6 0.8 1.0 1.2
0.1
1
10
5V
7V 4.5V
3.5V
2.5V
4V
Output Characteristics
T = 25°C
3V
VGS
10V
IDDrainCurrent (A)
VDS Drain-Source Voltage (V)
5V
2V
2.5V
4.5V
7V10V
4V
3V
Output Characteristics
T = 150°C
VGS
3.5V
IDDrainCurrent (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS =10V
T = 25°C
T = 150°C
IDDrain Current (A)
VGS Gate-SourceVoltage(V) Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID=2.5A
VGS(th)
VGS =V
DS
ID= 250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
4.5V
7V
5V
4V
10V
3.5V
2.5V
On-Resistance v Drain Current
T=25°C
3V VGS
RDS(on) Drain-Source On-Resistance
(W)
IDDrainCurrent (A)
T = 150°C
T=25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
TYPICAL CHARACTERISTICS
ZXMN3A01F
ISSUE 2 - JULY 2002
6
0.1 1 10
0
50
100
150
200
250
300
CRSS
COSS
CISS
VGS =0V
f=1MHz
C Capacitance (pF)
VDS -Drain-SourceVoltage(V) 01234
0
2
4
6
8
10 ID=2.5A
VDS = 15V
Gate-SourceVoltagevGateChargeCapacitance v Drain-Source Voltage Q - Charge (nC)
VGS Gate-SourceVoltage(V)
TYPICAL CHARACTERISTICS
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
ZXMN3A01F
ISSUE 2 - JULY 2002
7
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uk.sales@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublication isissuedtoprovideoutlineinformationonly which(unlessagreedbytheCompanyin writing)may notbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2002
DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES
MIN MAX MIN MAX MIN MAX MIN MAX
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
Cᎏ1.10 ᎏ0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM 10⬚TYP 10⬚TYP
PACKAGE DIMENSIONS
PACKAGE OUTLINE PAD LAYOUT
