ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23 package APPLICATIONS * DC - DC Converters * Power Management Functions * Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN3A01FTA 7" 8mm 3000 units ZXMN3A01FTC 13" 8mm 10000 units PINOUT DEVICE MARKING * 7N3 Top View ISSUE 2 - JULY 2002 1 ZXMN3A01F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT 30 V Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) ID Pulsed Drain Current (c) I DM Continuous Source Current (Body Diode) (b) IS Pulsed Source Current (Body Diode) (c) I SM 8 A Power Dissipation at T A =25C (a) Linear Derating Factor PD 625 5 mW mW/C Power Dissipation at T A =25C (b) Linear Derating Factor PD 806 6.4 mW mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C VALUE UNIT 20 V 2.0 1.6 1.8 A 8 A 1.3 A THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 200 C/W Junction to Ambient (b) R JA 155 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 2 - JULY 2002 2 ZXMN3A01F CHARACTERISTICS 0.7 RDS(on) Limited Max Power Dissipation (W) ID Drain Current (A) 10 1 DC 100m 1s 10m Single Pulse Tamb=25C 100ms 10ms 100m 1ms 100s 1 10 VDS Drain-Source Voltage (V) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 MaximumPower (W) Thermal Resistance (C/W) Tamb=25C D=0.5 100 Single Pulse D=0.2 D=0.05 D=0.1 0 100 1m 10m 100m 1 10 80 100 120 140 160 Derating Curve 150 50 60 Temperature (C) Safe Operating Area 200 40 100 1k Single Pulse Tamb=25C 10 1 100 1m Pulse Width (s) 10m 100m 1 10 100 Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 2 - JULY 2002 3 1k ZXMN3A01F ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) 30 I D =250A, V GS =0V 0.5 A V DS =30V, V GS =0V 100 nA V GS =20V, V DS =0V V I =250A, V DS = V GS D V GS =10V, I D =2.5A V GS =4.5V, I D =2.0A V DS =4.5V,I D =2.5A 1 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) V 0.106 0.12 0.18 g fs 3.5 S Input Capacitance C iss 190 pF Output Capacitance C oss 38 pF Reverse Transfer Capacitance C rss 20 pF Turn-On Delay Time t d(on) 1.7 ns Rise Time tr 2.3 ns Turn-Off Delay Time t d(off) 6.6 ns Fall Time tf 2.9 ns Gate Charge Qg 2.3 nC Total Gate Charge Qg 3.9 nC Gate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd 0.9 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr DYNAMIC (3) V DS =25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =15V, I D =2.5A R G @ 6.0, V GS =10V V DS =15V,V GS =5V, I D =2.5A V DS =15V,V GS =10V, I D =2.5A SOURCE-DRAIN DIODE 0.95 V T J =25C, I S =1.7A, V GS =0V 17.7 ns T J =25C, I F =2.5A, di/dt= 100A/s 13.0 nC NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JULY 2002 4 ZXMN3A01F 10V T = 25C 10 7V T = 150C 5V 4.5V ID Drain Current (A) ID Drain Current (A) TYPICAL CHARACTERISTICS 4V 3.5V 1 3V VGS 0.1 2.5V 0.1 1 5V 1 4V 3.5V 3V 2.5V VGS 0.1 2V 10 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 10 1.6 VDS = 10V Normalised RDS(on) and VGS(th) ID Drain Current (A) 7V 4.5V VDS Drain-Source Voltage (V) T = 150C 1 T = 25C 0.1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 3.5V 4V 1 VGS 5V 7V 0.1 10V T = 25C 1 ID Drain Current (A) VGS = VDS ID = 250uA 0.6 0.4 -50 0 50 100 150 Normalised Curves v Temperature 4.5V 0.1 VGS(th) 0.8 Tj Junction Temperature (C) ISD Reverse Drain Current (A) ) W ( 3V RDS(on) 1.2 Typical Transfer Characteristics 2.5V VGS = 10V ID = 2.5A 1.4 VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance 10V 10 10 10 T = 150C 1 T = 25C 0.1 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance v Drain Current ISSUE 2 - JULY 2002 5 ZXMN3A01F TYPICAL CHARACTERISTICS 10 VGS = 0V f = 1MHz 250 VGS Gate-Source Voltage (V) C Capacitance (pF) 300 200 CISS 150 COSS CRSS 100 50 0 0.1 1 10 ID = 2.5A 8 6 VDS = 15V 4 2 0 0 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ISSUE 2 - JULY 2002 6 ZXMN3A01F PACKAGE OUTLINE PAD LAYOUT CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 MILLIMETRES DIM INCHES MIN MAX MIN MAX H 0.33 0.51 0.013 0.020 K 0.01 0.10 0.0004 0.004 C 1.10 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM 10 TYP 10 TYP G 1.90 NOM 0.075 NOM (c) Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JULY 2002 7