LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* Current transfer ratio
( CTR : MIN. 20% at IF = 10mA, VCE = 10V )
* High isolation voleage between input and output
( Viso = 5,000 Vrms )
* Very High collector-emitter breakdown voltage
( BVCER = 300V)
* Dual-in-line package :
H11D1 : 1-channel type
* Wide lead spacing package :
H11D1M : 1-channel type
* Surface mounting package :
H11D1S : 1-channel type
* Tape and reel packaging :
H11D1S-TA1
* UL approved ( No. E113898 )
* VDE approved ( No. 094722 )
Part No. : H11D1 ( M, S, S-TA1 ) Page : 1 of 9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
H11D1 :
H11D1M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : H11D1 ( M, S, S-TA1 ) Page : 2of9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
H11D1S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : H11D1 ( M, S, S-TA1 ) Page : 3of9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
H11D1S-TA1 :
Description Symbol Dimensions in mm ( inches )
Tape wide W 16 ± 0.3 ( .63 )
Pitch of sprocket holes P0 4 ± 0.1 ( .15 )
Distance of compartment F
P2 7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1 12 ± 0.1 ( .472 )
Part No. : H11D1 ( M, S, S-TA1 ) Page : 4of9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER SYMBOL RATING UNIT
Forward Current IF 60 mA
Revers e Vol tage VR 6 V
INPUT
Power Dissipation P 100 mW
Collector - Emitter Voltage VCEO 300 V
Emitter - Base Voltage VEBO 7 V
Collector - Base Voltage VCBO 300 V
Emitter - Collector Voltage VECO 7 V
Collector Current IC 100 mA
OUTPUT
Collector P ower Dissipation PC 150 mW
Total Power Dissipation Ptot 250 mW
*1 Isolation Voltage Viso 5,000 Vrms
Operating Temperature Topr -55 ~ +100 °C
Storage Temperature Tstg -55 ~ +150 °C
*2 Soldering Temperature Tsol 260 °C
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : H11D1 ( M, S, S-TA1 ) Page : 5of9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Forward Voltage VF — 1.2 1.5 V IF = 10mA
Reverse Current IR — 0.01 10 µA VR = 6V
INPUT
Terminal Capacitance Ct — 30 250 pF V=0, f = 1KHz
Collector Dark Current ICER — — 100 nA
VCE=200V
RBE=1MΩ
Collector-Emitter
Breakd own Voltage BVCER 300 — — V
IC=0.1mA, IF=0
RBE=1MΩ
OUTPUT
Emitter-Collector
Breakd own Voltage BVECO 7 — — V
IE=10µA
IF=0
Collector Current IC 2 — — mA
*1 Cur rent Transfer Ratio CTR 20 — — %
IF=10mA,VCE=10V
RBE=1MΩ
Collector-Emitter
Saturation Voltage VCE(sat) — 0.25 0.4 V IF=10mA,IC=0.5mA
RBE=1MΩ
Isolation Resistance Riso 5x1010 — — Ω DC500V
40 ~ 60% R.H.
Floating Capacitance Cf — 0.6 — pF V=0, f=1MHz
Turn - on Time t on — 5 —
µs
TRANSFER
CHARACTERISTICS
Turn - o ff Time t off — 5 —
µs
VCC=10V, IC=2mA
RL=100Ω
*1 CTR I
I100%
C
F
=×
Part No. : H11D1 ( M, S, S-TA1 ) Page : 6of9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs. Fi g.2 Collector Power Dissipat io n vs.
Ambient Temperature
Fig.4 Forward Current vs. Forward
F
0-25
Collector-emitter Voltage
Fig.6 Collector Current vs.
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
Forward current I (mA)
Collector power dissipation Pc (mW)
Collector-emitter saturation voltage
V (sat) (V)
Collector current Ic (mA)
Collector-emitter voltage V (V )
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
125
60
0
50
100
150
200
0
0
0
0
6
Ambient Temperature
o
Voltage
81620124
IF= 30mA
30
CE
246810
Ic= 0.5mA
25
20
15
10
5
25mA
20mA
10mA
5mA
15mA
5
4
3
2
1
2 6 10 14 18
1mA
3mA
5mA
7mA
0 255075100
Forward current (mA)
0.5
1
100
10
1.91.3
Forward voltage (V)
0.90.7 1.1 1.5 1.7
60 C
100 C
80 C
o
o
o
o
40 C
o
20 C
PC (MAX.)
Fig.5 Output Current vs.
Forward Current Curve
0.01
Ice(on)-Normalized output current
100
10.00
1
IF= 10mA
VCE=10V
RBE=1M
Forward current IF (mA)
0.10
1.00
102 5 20 50
-55 0-55 -25 7525 50 100 125
o
Forward current IF (mA)
40
20
80
100
Part No. : H11D1 ( M, S, S-TA1 ) Page : 7of9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambie nt Temperatu r e Fig.8 Collect or-emitter Saturat ion Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature Fig.10 Response Time vs. Load
L
CEO
CE
vs. Ambient Temperature
0
10
Ambient temperature Ta ( C)
Relative current transfer ratio (%)
Collector-emitter saturation voltage
V (sat) (V)
Collector dark current I (nA)
Response time ( s)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C) Load resistance R (k )
100
1.2
20 100
0.00
0.12
10080604020 10.1
100
O
OO
Resistance
1
1000
Voltage gain Av (dB)
-8
-10
-6
0
-4
-2
Fre quency f (kHz) 500
Fig.11 Frequency Response
80604020 806040
-9
-7
-5
-1
-3
V = 200V
CE
0.10
0.08
0.06
0.04
0.02
100
10
10
1
tf
td
ts
tr
VCE=2V
IC=2mA
100101
VCE=5V
IC=2mA
IF=10mA
VCE=10V IF=20mA
IC=1mA
Vcc
Test Circuit for Frequency Response
Test Circuit for Response Time
Input
Vcc
Output
td
Output
Output
Input
tr tf
ts 90%
10%
RL=10k 1k 100
0.2
0.4
0.6
0.8
1.0
RL
RD
RDRL
Part No. : H11D1 ( M, S, S-TA1 ) Page : 8of9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
Part No. : H11D1 ( M, S, S-TA1 ) Page : 9of9
BNS-OD-C131/A4
