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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C24A
IC90 TC= 90°C12A
ICM TC= 25°C, 1 ms 4 8 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 33 W ICM = 24 A
(RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES
PCTC= 25°C 100 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Features
• Moderate frequency IGBT
• New generation HDMOSTM process
• International standard package
JEDEC TO-247
• High peak current handling capability
and antiparallel diode in one package
Applications
• PFC circuit
• AC motor speed control
• DC servo and robot drives
• Switch-mode and resonant-mode
power supplies
98600B (7/00)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 mA, VGE = 0 V 600 V
VGE(th) IC= 250 mA, VGE = VGE 2.5 5.0 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 125°C 1.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= ICE90, VGE = 15 V 2 .1 V
G = Gate, C = Collector,
E = Emitter, TAB = Collector
TO-247 AD
C (TAB)
GCE
HiPerFASTTM IGBT VDSS = 600 V
ID25 =24A
VCE(sat) = 2.1 V
tfi(typ) = 120 ns
IXGH 12N60BD1
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 5 1 1 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies 860 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 1 00 p F
Cres 15 pF
Qg32 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 10 nC
Qgc 10 nC
td(on) 20 ns
tri 20 ns
td(off) 150 250 ns
tfi 120 270 ns
Eoff 0.5 0.8 mJ
td(on) 20 ns
tri 20 ns
Eon 0.5 mJ
td(off) 200 ns
tfi 200 ns
Eoff 0.8 mJ
RthJC IGBT 1.25 K/W
RthCK 0.25 K/W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 0.8 • VCES, RG = Roff = 18 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 0.8 • VCES, RG = Roff = 18 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
IXGH 12N60BD1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 15A; TVJ = 150°C 1.3 V
TVJ = 25°C 2.5 V
IRM VR = 100 V; IF =25A; -diF/dt = 100 A/ms 2 2.5 A
L< 0.05 mH; TVJ = 100 °C
trr IF= 1 A; -di/dt = 50 A/ms;
VR = 30 V TJ = 25°C35ns
RthJC Diode 1.6 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
