35PD2M-TO
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 35PD2M-TO, an InGaAs photodiode with a 2mm-diameter photosensitive packaged in a TO-5 header, is
designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed.
Low dark current and high dynamic impedance are featured. High reliability is achieved through planar
semiconductor design and dielectric-passivation. Chips can also be attached and wire bonded to customer-
supplied or other specified packages.
Large Area InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Dark Current
Capacitance
Responsivity
Responsivity
Rise/Fall
Dynamic Impedance
nA
pF
A/W
A/W
ns
M Ohms
5
400
0.9
1
11/60
5
Class A –1V
0V
1300nm
1500nm
Class A
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
2 Volts
100mA
20mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS