2N4402 & 2N4403
Silicon PNP Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 40V......................................................
Collector−Base Voltage, VCBO 40V.......................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Continuous Collector Current, IC600mA..................................................
Total Device Dissipation (TA = +255C), PD625mW.........................................
Derate Above 255C 5.0mW/5C.....................................................
Total Device Dissipation (TC = +255C), PD1.5W............................................
Derate Above 255C 12mW/5C......................................................
Operating Junction Temperature Range, TJ−555 to +1505C..................................
Storage Temperature Range, Tstg −555 to +1505C..........................................
Thermal Resistance, Junction to Case, RthJC 83.35C/W.....................................
Thermal Resistance, Junction to Ambient, RthJA 2005C/W...................................
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 40 − − V
Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 40 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 5− − V
Collector Cutoff Current ICEX VCE = 35V, VEB = 0.4V − − 0.1 5A
Base Cutoff Current IBEV VCE = 35V, VEB = 0.4V − − 0.1 5A
ON Characteristics (Note 1)
DC Current Gain
2N4403
hFE VCE = 1V, IC = 0.1mA 30 − −
2N4402 VCE = 1V, IC = 1mA 30 − −
2N4403 60 − −
2N4402 VCE = 1V, IC = 10mA 50 − −
2N4403 100 − −
2N4402 VCE = 2V, IC = 150mA 50 −150
2N4403 100 −300
2N4402 VCE = 2V, IC = 500mA 20 − −
2N4403 20 − −
Note 1. Pulse Test: Pulse Width 3 3005s, Duty Cycle 3 2%.
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
Collector−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA − − 0.4 V
IC = 500mA, IB = 50mA − − 0.75 V
Base−Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA 0.75 −0.95 V
IC = 500mA, IB = 50mA − − 1.3 V
Small−Signal Characteristics
Current Gain−Bandwidth Product
2N4402
fTIC = 20mA, VCE = 10V, f = 100MHz 150 − − MHz
2N4403 200 − − MHz
Collector−Base Capacitance Ccb VCB = 10V, IE = 0, f = 140kHz − − 8.5 pF
Emitter−Base Capacitance Ceb VBE = 0.5V, IC = 0, f = 140kHz − − 30 pF
Input Impedance
2N4402
hie IC = 1mA, VCE = 10V, f = 1kHz 750 −7.5k 3
2N4403 1.5k −15k 3
Voltage Feedback Ratio hre IC = 1mA, VCE = 10V, f = 1kHz 0.1 −8.0 x 10−4
Small−Signal Current Gain
2N4402
hfe IC = 1mA, VCE = 10V, f = 1kHz 30
−
250
2N4403 60 −500
Output Admittance hoe IC = 1mA, VCE = 10V, f = 1kHz 1.0 −100 5mhos
Switching Characteristics
Delay Time tdVCC = 30V, VEB = 2V, IC = 150mA,
IB1 = 15mA
− − 15 ns
Rise Time tr− − 20 ns
Storage Time tsVCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
− − 225 ns
Fall Time tf− − 30 ns
Note 1. Pulse Test: Pulse Width 3 3005s, Duty Cycle 3 2%.
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
