BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
■STMicroelectronicsPREFERRED
SALESTYPES
■COMPLEMENTARYPNP - NPNDEVICES
■FULLYMOLDED ISOLATEDPACKAGE
■2000V DC ISOLATION(U.L. COMPLIANT)
APPLICATIONS
■GENERALPURPOSESWITCHING
■GENERALPURPOSEAMPLIFIERS
DESCRIPTION
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolatedpackage.
It is inteded for power linear and switching
applications.
The complementaryPNP types is the BD242BFP.
INTERNAL SCHEMATIC DIAGRAM
February 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241BFP
PNP BD242BFP
VCER Collector-Base Voltage (RBE =100Ω)90 V
VCEO Collector-Emitter Voltage (IB=0) 80 V
V
EBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 3 A
ICM Collector Peak Current 5 A
IBBase Current 1 A
Ptot Total Dissipation at Tc≤25 oC24 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220FP
1/4
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 5.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwisespecified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off
Current (IB=0) V
CE =60V 0.3 mA
I
CES Collector Cut-off
Current (VBE =0) V
CE =80V 0.2 mA
I
EBO Emitter Cut-off Current
(IC=0) V
EB =5V 1 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB=0)
I
C=30mA 80 V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=3A I
B= 0.6 A 1.2 V
VBE(ON)∗Base-Emitter Voltage IC=3A V
CE =4V 1.8 V
h
FE* DC Current Gain IC=1A V
CE =4V
I
C=3A V
CE =4V 25
10
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤2%
For PNP types voltage and current values are negative.
SafeOperating Area
BD241BFP / BD242BFP
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
BD241BFP / BD242BFP
3/4
Information furnished isbelieved tobe accurate and reliable. However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2001 STMicroelectronics – Printed in Italy – AllRights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany- Hong Kong - India - Italy- Japan -Malaysia - Malta - Morocco -
Singapore- Spain - Sweden - Switzerland -United Kingdom - U.S.A.
http://www.st.com
BD241BFP / BD242BFP
4/4
