© 2017 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25C to 150C 500 V
VDGR TJ = 25C to 150C, RGS = 1M 500 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC = 25C 40 A
IDM TC = 25C, Pulse Width Limited by TJM 80 A
IATC = 25C 40 A
EAS TC = 25C 2 J
PDTC = 25C 540 W
TJ -55 to +150 C
TJM +150 C
Tstg -55 to +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-247&TO-3P) 1.13/10 Nm/lb.in
Weight TO-268 4.0 g
TO-3P 5.5 g
TO-247 6.0 g
N-Channel Enhancement Mode
Avalanche rated
LinearL2TM
Power MOSFET
w/Extended FBSOA
IXTT40N50L2
IXTQ40N50L2
IXTH40N50L2
DS100100B(6/17)
VDSS = 500V
ID25 = 40A
RDS(on)
170m
Features
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Guaranteed FBSOA at 75C
Applications
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
DD (Tab)
TO-3P (IXTQ)
D
G
SD (Tab)
TO-268 (IXTT)
S
G
D (Tab)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 250A 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 50 A
TJ = 125C 300 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 170 m
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 11 15 19 S
Ciss 10.4 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 655 pF
Crss 155 pF
td(on) 50 ns
tr 133 ns
td(off) 127 ns
tf 44 ns
Qg(on) 320 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 64 nC
Qgd 198 nC
RthJC 0.23 C/W
RthCS (TO-247&TO-3P) 0.25 C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 400V, ID = 0.8A, TC = 75°C, tp = 3s 320 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 40 A
ISM Repetitive, Pulse Width Limited by TJM 160 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr IF = IS, -di/dt = 100A/μs, VR = 100V 500 ns
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
© 2017 IXYS CORPORATION, All rights reserved
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
5
10
15
20
25
30
35
40
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
12V
10V
7V
6V
8V
9V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
9V
7V
6V
5V
8V
10V
12V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
5
10
15
20
25
30
35
40
0246810121416
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
12V
10V
9V
5V
7V
6V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 20A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 40A
I
D
= 20A
Fig. 5. R
DS(on)
Normalized to I
D
= 20A Value vs.
Drain Current
0.8
1.2
1.6
2.0
2.4
2.8
0 102030405060708090
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
40
45
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
345678910
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
6
12
18
24
30
36
0 10203040506070
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 20A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All rights reserved
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
IXYS REF: T_40N50L2(8R)6-16-17-B
TO-3P Outline
b
S
A
E
D1
b4
A1
L1
E1
+
c
D
0P
b2
A2 0P1
1 2 3
4
+
e
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
TO-247 Outline
R
L1
A2
Q
E
A
D
c
B
A
b
C
L
D
S D2
E1
A2 A2 A2
e
0P1
ixys option
A1
b4
b2
D1
0P O 0K M D B M
+
O J M C A M
+
12 3
4
+
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
Terminals: 1 - Gate 2,4 - Drain
3 - Source
TO-268 Outline
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25
o
C
0.1
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
1ms
100μs
R
DS(on)
Limit
10ms
DC
100ms
25μs
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75
o
C
0.1
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 75
o
C
Sin
g
le Pulse
1ms
100μs
R
DS(on)
Limit
10ms
DC
100ms
25μs
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
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