2N2102
EPITAXIAL PLANAR NPN
■GENERAL PURPOSE AMPLIFIER AND
SWITCH
DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intended for a wide variety of small-signall and
medium power applications in military and
industrial equipments .
®
INT E R NAL SCH E M ATI C DIAG RA M
December 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 120 V
VCEO Collector-Emitter Voltage (IB = 0) 65 V
VCER Collector-Emitter Volta ge (RBE ≤ 10Ω)80 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 1 A
Ptot Total Dissipation at Tamb ≤ 25 oC
at TC ≤ 25 oC1
5W
W
Tstg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
TO-39
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Amb ient Max 30
150
oC/W
oC/W
ELE CT RICAL CHAR ACT ERIST ICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 60 V
VCB = 60 V TC = 150 oC2
2nA
µA
IEBO Emitter Cut-off Cu rrent
(IC = 0) VEB = 5 V 5 nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100 µA120 V
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA 65 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 150 mA IB = 15 mA 0.5 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 150 mA IB = 15 mA 1.1 V
hFE∗DC Current Gain IC = 10 µA VCE = 10 V
IC = 100 µA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 500 mA VCE = 10 V
IC = 1 A VCE = 10 V
10
20
35
40
25
10
120
hfe∗High Frequency
Current Gain IC = 50 mA VCE = 10 V
f = 20 MHz 6
NF Noise Figure IC = 300 µA VCE = 10 V f = 1 KHz
BW = 1 Hz Rg = 510 Ω 8dB
C
CBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1MHz 15 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1MHz 80 pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
o
(typ.)
L
G
I
D A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
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Information furnished is believed to be accurate and relia ble. However, STMicroelectronics assumes no responsibility for the consequ ences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird part ies which may resu lt from its use . No li cen se is
granted by implication or othe rwise under any patent or patent rights of STMicroe lectronics. Spec ification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplie d. S TMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
Th e ST l ogo is a tr ade mark of STMicroelectr onics
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