MSC1062.PDF 05-25-99
2N6303
ABSOLUTE MAXIMUM RATIABSOLUTE MAXIMUM RATINGS:NGS:
SYMBOL CHARACTERISTIC VALUE UNITS
V
CEO*
Collector-Emitter Voltage
-
80 Vdc
VCB*Collector-Base Voltage - 80 Vdc
VEB*Emitter-Base Voltage - 4.0 Vdc
I
C*
Peak Collector Current 10 Adc
IC*Continuous Collector Current 3.0 Adc
IB*Base Current 0.5 Adc
T
STG*
Storage Temperature -65 to 200 °°C
TJ*Operating Junction Temperature -65 to 200 °°C
PD*Total Device Dissipation
TC = 25°°C
Derate above 25°°C
6.0
34.3
Watts
mW/°°C
PD*
θθ JC
Total Device Dissipation
TA = 25°°C
Derate above 25°°C
Thermal Resistance
Junction to Case
Junction to Ambient
1.0
5.71
29
175
Watts
mW/°°C
°°C/W
°°C/W
Silicon PNP Power
Transistors
TO-5
APPLICATIONS:
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices
with excellent switching speeds, frequency response, gain linearity,
saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military
power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are
utilized to further increase the SOA capability and inherent reliability
of these devices. The temperature range to 200°°C permits reliable
operation in high ambients, and the hermetically sealed package
insures maximum reliability and long life.
* Indicates JEDEC registered data.
FEATURES:
• Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)
• DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc
• Low Collector-Emitter Saturation Voltage:
VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc
• High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)
MSC1062.PDF 05-25-99
2N6303
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
(25°°Case Temperature Unless Otherwise Noted) VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Min. Max. Units
V
CEO(sus)
*Collector-Emitter
Sustaining Voltage IC = 20 mAdc, IB = 0 (Note 1) - 80 ---- Vdc
BVCBO*Collector-Base
Breakdown Voltage IC = 100 µµAdc, IE = 0 - 80 ---- Vdc
BVEBO*Emitter-Base Breakdown
Voltage IE = 100 µµAdc, IC = 0 - 4.0 ---- Vdc
ICEX*Collector Cutoff Current VCE = - 80V, VBE(off) = 2.0 Vdc ---- 1.0 µµAdc
ICBO*Collector Cutoff Current VCB = - 80V, IE = 0, TC = 150°°C---- 150 µµAdc
hFE*DC Current Gain
(Note 1) IC = 500 mAdc, VCE = - 1.0 Vdc
IC = 1.5 Adc, VCE = - 2.0 Vdc
IC = 2.5 Adc, VCE = - 3.0 Vdc
IC = 3.0 Adc, VCE = - 5.0 Vdc
35
30
20
20
----
150
----
----
----
----
----
----
VCE(sat)*Collector-Emitter
Saturation Voltage
(Note 1)
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
----
----
----
- 0.5
- 0.75
- 1.3
Vdc
Vdc
Vdc
VBE(sat)*Base-Emitter Saturation
Voltage
(Note 1)
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
----
- 0.9
----
- 1.0
- 1.4
- 2.0
Vdc
Vdc
Vdc
fT*Current Gain Bandwidth
Product (Note 2) IC = 100 mAdc, VCE = - 5.0 Vdc, ftest = 20 MHz 60 ---- MHz
Cob*Output Capacitance VCB = - 10 Vdc, IE = 0, f = 0.1 MHz ---- 120 pF
Cib*Input Capacitance VEB = - 3.0 Vdc, IC = 0, f = 0.1 MHz ---- 1000 pF
td*Delay Time VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc,
IB1 = 150 mAdc ---- 35 ns
tr*Rise Time VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc,
IB1 = 150 mAdc ---- 65 ns
ts* Storage Time VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc ---- 325 ns
tf* Fall Time VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc ---- 75 ns
Note 1: Pulse Test: Pulse Width ≤≤ 300µµs, Duty Cycle ≤≤ 2.0%.
Note 2: fT = |hfe| * ftest
* Indicates JEDEC registered data.
MSC1062.PDF 05-25-99
2N6303
PACKAGE MECHANICAL DATA:PACKAGE MECHANICAL DATA:
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
Ø.305 [7.75]
Ø.335 [8.51]
1.500 [38.10] MIN
.010 [.254]
.030 [.762]
.240 [6.09]
.260 [6.60]
.100 [2.54]
.100 [2.54]
.200 [5.08]
. 029 [.736]
.045 [1.14]
.031 [.787]
45°
Ø.335 [8.51]
Ø.370 [9.40]
Ø.017 [.432]
+.002
-.001 [+.051]
[.025]
