NTA4151P, NTE4151P Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89 Features * * * * * Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC-75 Standard Gullwing Package ESD Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) TYP ID MAX 0.26 W @ -4.5 V 0.35 W @ -2.5 V -20 V -760 mA 0.49 W @ -1.8 V Applications * * * * High Side Load Switch DC-DC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. P-Channel MOSFET D MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Symbol Value Units Drain-to-Source Voltage Parameter VDSS -20 V Gate-to-Source Voltage VGS 6.0 V ID -760 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) SC-75 SC-89 Steady State PD 1000 mA TJ, TSTG -55 to 150 C Continuous Source Current (Body Diode) IS -250 mA Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 C tp =10 ms Operating Junction and Storage Temperature Gate-to-Source ESD Rating - (Human Body Model, Method 3015) 2 1 SC-75 / SOT-416 CASE 463 STYLE 5 3 Drain xx M G G 3 ESD 1800 V 2 1 THERMAL RESISTANCE RATINGS Junction-to-Ambient - Steady State (Note 1) SC-75 SC-89 MARKING DIAGRAM & PIN ASSIGNMENT 3 IDM Pulsed Drain Current S mW 301 313 Steady State G C/W RqJA 1 Gate 2 Source SC-89 CASE 463C 415 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). xx M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2014 October, 2014 - Rev. 8 1 Publication Order Number: NTA4151P/D NTA4151P, NTE4151P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = -250 mA -20 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = -16 V -1.0 -100 nA Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 4.5 V $1.0 $10 mA OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS = VGS, ID = -250 mA -1.2 V Drain-to-Source On Resistance RDS(on) VGS = -4.5 V, ID = -350 mA 0.26 0.36 W VGS = -2.5 V, ID = -300 mA 0.35 0.45 VGS = -1.8 V, ID = -150 mA 0.49 1.0 gFS VDS = -10 V, ID = -250 mA 0.4 S Input Capacitance CISS pF COSS VGS = 0 V, f = 1.0 MHz, VDS = -5.0 V 156 Output Capacitance Reverse Transfer Capacitance CRSS Forward Transconductance -0.45 CHARGES AND CAPACITANCES 28 18 VGS = -4.5 V, VDD = -10 V, ID = -0.3 A nC Total Gate Charge QG(TOT) 2.1 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS 0.325 Gate-to-Drain Charge QGD 0.5 0.125 SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time VGS = -4.5 V, VDD = -10 V, ID = -200 mA, RG = 10 W ns 8.0 8.2 td(OFF) 29 tf 20.4 Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -250 mA -0.72 -1.1 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Marking Package Shipping NTA4151PT1G TN SC-75 (Pb-Free) 3000 / Tape & Reel NTE4151PT1G TM SC-89 (Pb-Free) 3000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS 0.6 0.7 VDS w -10 V 0.6 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) TJ = 25C -1.5 V 0.5 VGS = -1.75 V to -4.5 V 0.4 -1.25 V 0.3 0.2 0.1 -1.0 V 0.5 0.4 0.3 0.2 TJ = 25C TJ = 125C 0.1 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.4 1.6 Figure 2. Transfer Characteristics 0.5 0.4 TJ = 125C 0.3 TJ = 25C TJ = -55C 0.2 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2.0 0.6 VGS = -2.5 V 0.5 TJ = 125C 0.4 TJ = 25C 0.3 TJ = -55C 0.2 0.1 0 0 0.1 0.2 -ID, DRAIN CURRENT (AMPS) 0.3 0.4 0.5 0.6 0.7 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature Figure 4. On-Resistance vs. Drain Current and Temperature 1.6 250 ID = - 0.35 A VGS = -4.5 V TJ = 25C C, CAPACITANCE (pF) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.2 Figure 1. On-Region Characteristics VGS = -4.5 V 1.4 0.8 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.6 0 0 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 1.2 1.0 0.8 0.6 -50 200 CISS 150 100 COSS 50 -25 0 25 50 75 100 125 150 0 CRSS 0 TJ, JUNCTION TEMPERATURE (C) 4 8 12 16 DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation www.onsemi.com 3 20 NTA4151P, NTE4151P 0.7 5 QT -IS, SOURCE CURRENT (AMPS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 4 3 QGS 2 QGD VDS = -10 V ID = -0.3 A TA = 25C 1 0 0 0.4 2.0 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.1 TJ = 25C 0 2.4 TJ = 125C 0.2 0 0.4 0.6 0.8 1.0 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate-to-Source Voltage vs. Total Gate Charge r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 0.2 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 9. Normalized Thermal Response www.onsemi.com 4 10 100 1000 NTA4151P, NTE4151P PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. -E- 2 3 b 3 PL 0.20 (0.008) e -D- DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 NTA4151P, NTE4151P PACKAGE DIMENSIONS SC-89, 3-LEAD CASE 463C-03 ISSUE C A -X- 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. B -Y- S K DIM A B C D G H J K L M N S G 2 PL D 0.08 (0.003) M 3 PL X Y N M C J -T- MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF --- --- 10 _ --- --- 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 SEATING PLANE SOLDERING FOOTPRINT* H H L G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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