© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 8 1Publication Order Number:
NTA4151P/D
NTA4151P, NTE4151P
Small Signal MOSFET
−20 V, −760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
•Low RDS(on) for Higher Efficiency and Longer Battery Life
•Small Outline Package (1.6 x 1.6 mm)
•SC−75 Standard Gullwing Package
•ESD Protected Gate
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•High Side Load Switch
•DC−DC Conversion
•Small Drive Circuits
•Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain−to−Source Voltage VDSS −20 V
Gate−to−Source Voltage VGS ±6.0 V
Continuous Drain Current
(Note 1) Steady State ID−760 mA
Power Dissipation (Note 1)
SC−75
SC−89 Steady State PD301
313
mW
Pulsed Drain Current tp =10 msIDM ±1000 mA
Operating Junction and Storage Temperature TJ,
TSTG −55 to
150 °C
Continuous Source Current (Body Diode) IS−250 mA
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s) TL260 °C
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015) ESD 1800 V
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
SC−75
SC−89
RqJA 415
400
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in s q
[1 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENT
www.onsemi.com
xx = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
RDS(on) TYP ID MAXV(BR)DSS
0.26 W @ −4.5 V
−20 V 0.35 W @ −2.5 V −760 mA
0.49 W @ −1.8 V
P−Channel MOSFET
G
D
S
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
SC−75 / SOT−416
CASE 463
STYLE 5
2
1
3
3
Drain
2
Source
SC−89
CASE 463C
2
1
3
xx M G
G
1
Gate
NTA4151P, NTE4151P
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−20 V
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V −1.0 −100 nA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V$1.0 $10 mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = −250 mA−0.45 −1.2 V
Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −350 mA 0.26 0.36 W
VGS = −2.5 V, ID = −300 mA 0.35 0.45
VGS = −1.8 V, ID = −150 mA 0.49 1.0
Forward Transconductance gFS VDS = −10 V, ID = −250 mA 0.4 S
CHARGES AND CAPACITANCES
Input Capacitance CISS VGS = 0 V, f = 1.0 MHz,
VDS = −5.0 V156 pF
Output Capacitance COSS 28
Reverse Transfer Capacitance CRSS 18
Total Gate Charge QG(TOT) VGS = −4.5 V, VDD = −10 V,
ID = −0.3 A 2.1 nC
Threshold Gate Charge QG(TH) 0.125
Gate−to−Source Charge QGS 0.325
Gate−to−Drain Charge QGD 0.5
SWITCHING CHARACTERISTICS (Note 3)
T urn−On Delay Time td(ON) VGS = −4.5 V, VDD = −10 V,
ID = −200 mA, RG = 10 W8.0 ns
Rise Time tr8.2
T urn−Off Delay Time td(OFF) 29
Fall Time tf20.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, IS = −250 mA −0.72 −1.1 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Marking Package Shipping†
NTA4151PT1G TN SC−75
(Pb−Free) 3000 / Tape & Reel
NTE4151PT1G TM SC−89
(Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTA4151P, NTE4151P
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3
TYPICAL ELECTRICAL CHARACTERISTICS
0
50
100
150
200
250
0 4 8 12 16 2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.1 0.2 0.3 0.4 0.5 0.6 0
.7
−ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 125°C
VGS = −2.5 V
TJ = −55°C
TJ = 25°C
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 0.5 1.0 1.5 2.0 2.5 3.0 0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.4 0.8 1.2 1.6 2
.0
Figure 1. On−Region Characteristics
−1.0 V
−1.25 V
−1.5 V
VGS = −1.75 V to −4.5 V
TJ = 25°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−ID, DRAIN CURRENT (AMPS)
TJ = −55°C
TJ = 25°C
VDS w −10 V
TJ = 125°C
Figure 3. On−Resistance vs. Drain Current and
Temperature
−ID, DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (
W
)
TJ = 125°C
VGS = −4.5 V
TJ = −55°C
TJ = 25°C
Figure 4. On−Resistance vs. Drain Current and
Temperature
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
ID = − 0.35 A
VGS = −4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 6. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
TJ = 25°C
CISS
COSS
CRSS
NTA4151P, NTE4151P
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4
TYPICAL ELECTRICAL CHARACTERISTICS
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−IS, SOURCE CURRENT (AMPS)
VGS = 0 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 0.2 0.4 0.6 0.8 1.0
0 1.6
4
1
0
QG, TOTAL GATE CHARGE (nC)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.2
2
3
5
0.4
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
0.8
QT
VDS = −10 V
ID = −0.3 A
TA = 25°C
2.0 2.4
TJ = 25°C
TJ = 125°C
Figure 8. Diode Forward Voltage vs. Current
QGS QGD
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
Figure 9. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
NTA4151P, NTE4151P
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5
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70 0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
NTA4151P, NTE4151P
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6
PACKAGE DIMENSIONS
G
M
0.08 (0.003) X
D3 PL
J
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
A
B
Y
12
3
N
2 PL
K
C
−T− SEATING
PLANE
DIM
AMIN NOM MIN NOM
INCHES
1.50 1.60 1.70 0.059
MILLIMETERS
B0.75 0.85 0.95 0.030
C0.60 0.70 0.80 0.024
D0.23 0.28 0.33 0.009
G0.50 BSC
H0.53 REF
J0.10 0.15 0.20 0.004
K0.30 0.40 0.50 0.012
L1.10 REF
M−−− −−− 10 −−−
N−−− −−− 10 −−−
S1.50 1.60 1.70 0.059
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.006 0.008
0.016 0.020
0.043 REF
−−− 10
−−− 10
0.063 0.067
MAX MAX
_
_
_
_
M
H
H
L
G
S
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SC−89, 3−LEAD
CASE 463C−03
ISSUE C
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Phone: 81−3−5817−1050
NTA4151P/D
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