Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02170 Features * Cascadable 50 Gain Block * Low Noise Figure: 2.0 dB Typical at 0.5 GHz * High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz * 3 dB Bandwidth: DC to 1.0 GHz * Unconditionally Stable (k>1) * Hermetic Gold-Ceramic Surface Mount Package Description The INA-02170 is a low noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification. 70 mil Package The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Typical Biasing Configuration VCC > 8 GHz RFC (Optional) Rbias 4 Cblock RF IN Cblock 3 1 2 RF OUT Vd = 5.5 V 6-93 5965-9674E INA-02170 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2,4]: jc = 140C/W 50 mA 400 mW +13 dBm 200C -65 to 200C Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.1 mW/C for TC > 144C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. INA-02170 Electrical Specifications[1], TA = 25C Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 GP Power Gain (|S21| 2) GP Gain Flatness f3 dB 3 dB Bandwidth[2] ISO Reverse Isolation (|S12| 2) VSWR Units Min. f = 0.5 GHz dB 29.0 f = 0.01 to 1.0 GHz dB 1.5 GHz 1.0 dB 39 f = 0.01 to 1.0 GHz Typ. Max. 31.5 34.0 Input VSWR f = 0.01 to 1.0 GHz 1.4:1 Output VSWR f = 0.01 to 1.0 GHz 1.5:1 NF 50 Noise Figure f = 0.5 GHz dB 2.0 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11 IP3 Third Order Intercept Point f = 0.5 GHz dBm 23 tD Group Delay f = 0.5 GHz psec 350 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V 4.0 5.5 mV/C 2.5 7.0 +10 Notes: 1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP). INA-02170 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 .05 .05 .06 .09 .12 .15 .17 .17 .18 .19 .19 .20 .21 .22 .23 .25 .29 -8 -31 -85 -110 -129 -140 -151 -159 -174 179 173 166 162 159 155 150 144 32.5 32.5 32.5 32.3 32.0 31.7 31.4 31.0 30.2 29.2 27.8 26.1 24.2 22.3 20.4 16.7 13.1 42.32 42.32 42.05 41.06 39.82 38.43 37.08 35.49 32.45 28.70 24.51 20.18 16.26 13.02 10.45 6.82 4.51 -2 -7 -14 -27 -40 -53 -65 -77 -101 -126 -149 -171 170 153 139 112 87 -39.2 -38.9 -38.0 -38.8 -38.8 -40.2 -40.0 -39.6 -38.2 -38.2 -37.5 -36.2 -36.3 -34.1 -33.0 -33.3 -31.8 .011 .011 .013 .011 .011 .010 .010 .011 .012 .012 .013 .015 .015 .020 .022 .022 .026 14 14 10 5 1 19 8 23 23 17 27 35 34 46 37 32 32 .19 .19 .19 .18 .17 .16 .16 .16 .16 .16 .15 .14 .12 .10 .07 .05 .04 -1 -5 -10 -16 -21 -25 -27 -30 -40 -53 -71 -102 -172 144 117 95 78 1.26 1.26 1.15 1.29 1.32 1.45 1.48 1.43 1.43 1.55 1.66 1.73 2.07 1.94 2.17 3.19 3.96 6-94 INA-02170 Typical Performance, TA = 25C (unless otherwise noted) 35 35 50 3.5 Gain Flat to DC TMS = +125C TMS = +25C 40 TMS = -55C 3.0 20 Gp (dB) 2.5 30 30 Id (mA) 25 NF (dB) Gp (dB) 30 0.1 GHz 0.5 GHz 20 2.0 1.0 GHz 1.5 GHz 25 20 10 15 .01 .02 .05 0.1 0.2 0.5 1.0 1.5 2.0 0 2 4 6 8 Vd (V) Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 35 mA. Figure 2. Device Current vs. Voltage. 50 3.5 Id = 40 mA Gp 12 30 P1 dB 12 10 3.0 Id = 35 mA 9 NF (dB) 14 P1 dB (dBm) 3.0 29 P1 dB (dBm) Gp (dB) 31 40 Figure 3. Power Gain vs. Current. 15 32 30 Id (mA) FREQUENCY (GHz) NF (dB) 15 20 0 Id = 30 mA 2.5 6 8 2.5 NF 2.0 2.0 Id = 30 to 40 mA 3 1.0 1.0 -55 -25 +25 +85 0 .02 +125 TEMPERATURE (C) .05 0.1 0.2 .040 1.02 GROUND .020 .508 RF OUTPUT AND BIAS 3 1 2 .004 .002 .10 .05 GROUND .070 1.70 .495 .030 12.57 .76 2.0 Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. 70 mil Package Dimensions RF INPUT 1.0 FREQUENCY (GHz) Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.1 GHz, Id = 35 mA. 4 0.5 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .035 .89 6-95 1.5 .02 .05 0.1 0.2 0.5 1.0 2.0 FREQUENCY (GHz) Figure 6. Noise Figure vs. Frequency.