6-93
Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 1.0 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-Ceramic
Surface Mount Package
INA-02170
70 mil Package
Description
The INA-02170 is a low noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
Typical Biasing Configuration
Cblock Cblock
Rbias
VCC > 8 GHz
Vd = 5.5 V
RFC (Optional)
RF IN RF OUT
4
12
3
feedback amplifier housed in a
hermetic, high reliability package.
It is designed for narrow or wide
bandwidth industrial and military
applications that require high gain
and low noise IF or RF
amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
5965-9674E
6-94
INA-02170 Absolute Maximum Ratings
Parameter Absolute Maximum[1]
Device Current 50 mA
Power Dissipation[2,3] 400 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200°C
Thermal Resistance[2,4]:
θjc = 140°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE
= 25°C.
3. Derate at 7.1 mW/°C for TC > 144°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
GPPower Gain (|S21|2) f = 0.5 GHz dB 29.0 31.5 34.0
∆GPGain Flatness f = 0.01 to 1.0 GHz dB ±1.5
f3 dB 3 dB Bandwidth[2] GHz 1.0
ISO Reverse Isolation (|S12|2) f = 0.01 to 1.0 GHz dB 39
Input VSWR f = 0.01 to 1.0 GHz 1.4:1
Output VSWR f = 0.01 to 1.0 GHz 1.5:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 2.0 2.5
P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11
IP3Third Order Intercept Point f = 0.5 GHz dBm 23
tDGroup Delay f = 0.5 GHz psec 350
VdDevice Voltage V 4.0 5.5 7.0
dV/dT Device Voltage Temperature Coefficient mV/°C +10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (GP).
INA-02170 Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 ΩUnits Min. Typ. Max.
VSWR
INA-02170 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.01 .05 –8 32.5 42.32 –2 –39.2 .011 14 .19 –1 1.26
0.05 .05 –31 32.5 42.32 –7 –38.9 .011 14 .19 –5 1.26
0.10 .06 –85 32.5 42.05 –14 –38.0 .013 10 .19 –10 1.15
0.20 .09 –110 32.3 41.06 –27 –38.8 .011 5 .18 –16 1.29
0.30 .12 –129 32.0 39.82 –40 –38.8 .011 1 .17 –21 1.32
0.40 .15 –140 31.7 38.43 –53 –40.2 .010 19 .16 –25 1.45
0.50 .17 –151 31.4 37.08 –65 –40.0 .010 8 .16 –27 1.48
0.60 .17 –159 31.0 35.49 –77 –39.6 .011 23 .16 –30 1.43
0.80 .18 –174 30.2 32.45 –101 –38.2 .012 23 .16 –40 1.43
1.00 .19 179 29.2 28.70 –126 –38.2 .012 17 .16 –53 1.55
1.20 .19 173 27.8 24.51 –149 –37.5 .013 27 .15 –71 1.66
1.40 .20 166 26.1 20.18 –171 –36.2 .015 35 .14 –102 1.73
1.60 .21 162 24.2 16.26 170 –36.3 .015 34 .12 –172 2.07
1.80 .22 159 22.3 13.02 153 –34.1 .020 46 .10 144 1.94
2.00 .23 155 20.4 10.45 139 –33.0 .022 37 .07 117 2.17
2.50 .25 150 16.7 6.82 112 –33.3 .022 32 .05 95 3.19
3.00 .29 144 13.1 4.51 87 –31.8 .026 32 .04 78 3.96
S11 S21 S12 S22
6-95
INA-02170 Typical Performance, TA = 25°C
(unless otherwise noted)
0
10
20
30
40
50
Id (mA)
Gp (dB)
Id (mA)
04628
V
d
(V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz) FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency.
NF (dB)
15
20
25
30
35
1.5
.01 .02 .05 0.1 0.2 0.5 1.0 2.0
2.0
2.5
3.0
3.5
Gp (dB)
NF (dB)
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
TMS = +125°C
TMS = +25°C
TMS = –55°C
15
20
25
30
35
20 30 40 50
Figure 3. Power Gain vs. Current.
0.1 GHz
1.5 GHz
1.0 GHz
0.5 GHz
1.0
2.5
2.0
3.0
1.0
29
30
31
32
8
10
12
14
–55 –25 +25 +85 +125 .02 .05 0.1 0.50.2 2.01.0 .02 .05 0.1 0.50.2 2.01.0
NF (dB)
0
9
6
15
12
3
1.5
3.0
2.5
3.5
2.0
P1 dB (dBm)
P1 dB (dBm)
Gp (dB)
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.1 GHz, Id = 35 mA.
Gp
P1 dB
NF
Id = 40 mA
Id = 35 mA
Id = 30 mA
Id = 30 to 40 mA
Gain Flat to DC
70 mil Package Dimensions
13
4
2
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.020
.508
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.040
1.02
.035
.89
.004 ± .002
.10 ± .05
