Datasheet V2020.A.1 GAS06520D 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Features * Zero reverse recovery current * Zero forward recovery voltage * Temperature independent switching behavior * High temperature operation * High frequency operation Key Characteristics VRRM 650 V IF, Tc157 20 A QC 69 nC Benefits * Unipolar rectifier * Substantially reduced switching losses * No thermal run-away with parallel devices * Reduced heat sink requirements Applications * SMPS, e.g., CCM PFC; * Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. Package Type Marking GAS06520D TO-263 GAS06520D GAS06520D (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED GAS06520D 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current Symbol Value Unit VRRM 650 V VRSM 650 VDC 650 79.5 41.5 20 IF IFRM IFSM TC=25 TC=125 TC=157 TC=25, tp=10ms Half Sine WaveD=0.3 TC=25, tp=10ms Half Sine Wave TC=25 TC=110 100 210 V V A A A 288 125 W W Tj -55 to 175 Tstg -55 to 175 Power Dissipation PTOT Operating Junction Storage Temperature Test Condition Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC GAS06520D Test Condition Value Typ. Unit 0.52 /W (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED GAS06520D 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Forward Voltage Reverse Current Symbol VF IR Test Conditions Numerical Typ. Max. Unit IF=20A, Tj=25 1.38 1.7 IF=20A, Tj=175 1.55 2.0 VR=650V, Tj=25 1 5 50 100 uA 69 - nC 1390 2000 VR=200V, Tj=25, f=1MHZ 130 170 VR=400V, Tj=25, f=1MHZ 127 150 VR=650V, Tj=175 V VR=400V, Tj=150 Total Capacitive Charge QC VR Qc 0 C (V )dV VR=0V, Tj=25, f=1MHZ Total Capacitance C pF Performance Graphs 1) Forward IV characteristics as a function of Tj : GAS06520D 2) Reverse IV characteristics as a function of Tj : (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED GAS06520D 3) Current Derating: 650V/ 20A Silicon Carbide Power Schottky Barrier Diode 4) Capacitance vs. reverse voltage: Package TO-263 GAS06520D (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED GAS06520D 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp GAS06520D (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED