SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS BCX17 BCX18 ISSUE 3 FEBRUARY 1996 PARTMARKING DETAILS BCX17 BCX18 BCX17R BCX18R T1 T2 T4 T5 E C B COMPLEMENTARY TYPES - BCX17 - BCX19 BCX18 - BCX20 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX17 BCX18 UNIT Collector-Emitter Voltage VCES -50 -30 V Collector-Emitter Voltage (IC =-10mA) VCEO -45 Emitter-Base Voltage VEBO Collector Current -25 V -5 V IC -500 mA Peak Collector Current ICM -1000 mA Base Current IB -100 mA Peak Base Current IBM -200 mA Power Dissipation at Tamb=25C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Cut-Off Current ICBO -100 -200 A nA IE =0, VCB =-20V IE =0, VCB =-20V, Tj=150C Emitter-Base Cut-Off Current IEBO -10 A IC =0, VEB =-1V Base-Emitter Voltage VBE -1.2 V IC =-500mA, VCE =-1V* Collector-Emitter Saturation Voltage VCE(sat) -620 mV IC =-500mA, IB =-50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 MHz IC =-10mA, VCE =-5V f =35MHz Collector - base Capacitance Cobo 8.0 pF IE =Ie =0, VCB =-10V f =1MHz 600 100 70 40 IC =-100 mA, VCE =-1V IC =-300mA, VCE =-1V* IC =-500mA, VCE =-1V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 31