Data Sheet 4V Drive Nch MOSFET RQ1E075XN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8). (1) (2) (3) (4) Abbreviated symbol : XR Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RQ1E075XN Inner circuit Taping TCR 3000 (8) Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous VGSS ID IDP IS Pulsed ISP PD Power dissipation Channel temperature Range of storage temperature *1 *1 Limits Unit 30 20 7.5 V V A 30 1.25 30 A A A 1.5 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit 83.3 C / W *2 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain (7) (6) (5) (3) (4) 2 1 (1) (2) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* *Mounted on a ceramic board. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet RQ1E075XN Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions VGS=20V, VDS=0V 30 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=30V, VGS=0V VGS (th) 1.0 - 2.5 V - 12 17 ID=7.5A, VGS=10V - 17 24 m ID=7.5A, VGS=4.5V VDS=10V, ID=1mA Static drain-source on-state resistance RDS (on)* - 19 27 Forward transfer admittance l Yfs l* 4.5 - - S ID=7.5A, VDS=10V Input capacitance Ciss - 440 - pF VDS=10V Output capacitance Coss - 170 - pF VGS=0V Reverse transfer capacitance Crss - 85 - pF f=1MHz Turn-on delay time td(on) * - 7 - ns ID=3.75A, VDD 15V Rise time tr * td(off) * - 25 - ns VGS=10V - 35 - ns RL=4.0 tf * - 7 - ns RG=10 Total gate charge Qg * - 6.8 - nC ID=7.5A, VDD 15 Gate-source charge Qgs * Qgd * 1.6 2.6 - nC nC VGS=5V Gate-drain charge - Turn-off delay time Fall time ID=7.5A, VGS=4.0V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=7.5A, VGS=0V *Pulsed www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet RQ1E075XN Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics() 7 7 Ta=25C Pulsed 6 5 4 VGS= 3.0V 3 Ta=25C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V 6 VGS= 10V VGS= 4.5V VGS= 4.0V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] Fig.2 Typical Output Characteristics() VGS= 2.8V VGS= 2.5V 2 1 5 VGS= 2.8V 4 VGS= 2.5V 3 2 1 VGS= 2.0V VGS= 2.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Fig.3 Typical Transfer Characteristics 8 10 100 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] VDS= 10V Pulsed DRAIN CURRENT : ID[A] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 100 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.1 0.01 Ta=25C Pulsed 10 . VGS= 4.0V VGS= 4.5V VGS= 10V 1 0.001 GATE-SOURCE VOLTAGE : VGS[V] 1 10 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 0 1 2 0.01 3 100 0.1 100 100 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 4 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] 10 Ta=125C Ta=75C Ta=25C Ta=-25C 1 VGS= 4.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.01 0.1 1 10 100 0.01 DRAIN-CURRENT : ID[A] www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 DRAIN-CURRENT : ID[A] 3/6 2011.04 - Rev.A Data Sheet RQ1E075XN Fig.8 Forward Transfer Admittance vs. Drain Current Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] VGS= 4.0V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.01 0.1 1 10 VDS= 10V Pulsed 10 1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 0.01 100 0.1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 10 1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 0.01 Ta=25C Pulsed ID= 3.75A 40 ID= 7.5A 30 20 10 0 0 0.5 1 1.5 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 10 1000 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25C VDD=15V VGS=10V RG=10 Pulsed td(off) SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 100 td(on) 10 8 6 4 Ta=25C VDD= 15V ID= 7.5A RG=10 Pulsed 2 tr 1 0 0.01 0.1 1 10 100 0 DRAIN-CURRENT : ID[A] www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 12 14 16 TOTAL GATE CHARGE : Qg [nC] 4/6 2011.04 - Rev.A Data Sheet RQ1E075XN Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera 10000 1000 Operation in this area is limited by RDS(ON) (VGS=10V) Ciss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] Ta=25C f=1MHz VGS=0V 1000 Crss 100 Coss 100 10 PW =100us PW =1ms 1 PW = 10ms 0.1 10 Ta=25C Single Pulse Mounted on a ceramic board. (30mm x 30mm x 0.8mm) DC operation 0.01 0.01 0.1 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 0.01 Mounted on a ceramic board. (30mm x 30mm x 0.8mm) Rth(ch-a)=83.3C/W Rth(ch-a)(t)=r(t)xRth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A Data Sheet RQ1E075XN Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A